Method of manufacturing fin field-effect transistor device

1. A method comprising:

forming a first fin protruding above a substrate, the first fin having a PMOS region;

forming a first gate structure over the first fin in the PMOS region;

forming a first spacer layer over the first fin and the first gate structure;

forming a second spacer layer over the first spacer layer;

performing a first etching process to remove the second spacer layer from a top surface and sidewalls of the first fin in the PMOS region;

performing a second etching process to remove the first spacer layer from the top surface and the sidewalls of the first fin in the PMOS region; and

epitaxially growing a first source/drain material over the first fin in the PMOS region, the first source/drain material extending along the top surface and the sidewalls of the first fin in the PMOS region.

2. The method of claim 1 , wherein the first spacer layer and the second spacer layer are formed of different materials.

3. The method of claim 1 , wherein performing the first etching process comprises performing an anisotropic etching process.

4. The method of claim 3 , wherein after performing the first etching process, the first spacer layer over the top surface and the sidewalls of the first fin in the PMOS region is exposed, and a remaining portion of the second spacer layer extends along sidewalls of the first gate structure, and wherein the first spacer layer is between the remaining portion of the second spacer layer and the first gate structure.

5. The method of claim 1 , wherein performing the second etching process exposes the top surface and the sidewalls of the first fin in the PMOS region.

6. The method of claim 1 , wherein performing the first etching process comprises performing a plasma etch process, wherein the plasma etch process comprises a first plasma etching step and a second plasma etching step, wherein the first plasma etching step is performed using tetrafluoromethane (CF 4 ), and the second plasma etching step is performed using oxygen (O 2 ).

7. The method of claim 1 , wherein performing the second etching process comprises performing a chemical etch process, wherein the chemical etch process comprises a first step, a second step, a third step and a fourth step performed sequentially.

8. The method of claim 7 , wherein the first step is performed using a mixture comprising hydrogen peroxide (H 2 O 2 ) and ozone (O 3 ), the second step is performed using diluted hydrofluoric acid (dHF), the third step is performed using phosphoric acid (H 3 PO 4 ), and the fourth step is performed using a mixture comprising deionized water (DIW), ammonium hydroxide (NH 4 OH), and hydrogen peroxide (H 2 O 2 ).

9. The method of claim 1 , wherein the first fin further has an NMOS region, wherein the method further comprises:

forming a second gate structure over the first fin in the NMOS region, wherein the first spacer layer and the second spacer layer are formed over the second gate structure;

forming a patterned mask layer to cover the NMOS region before performing the first etching process; and

removing the patterned mask layer after epitaxially growing the first source/drain material.

10. The method of claim 9 , further comprising:

after epitaxially growing the first source/drain material, removing remaining portions of the second spacer layer in the PMOS region and the NMOS region; and

epitaxially growing a second source/drain material over the first fin in the NMOS region.

11. The method of claim 10 , wherein epitaxially growing the second source/drain material comprises:

removing a portion of the first spacer layer to expose a top surface of the first fin in the NMOS region;

recessing the top surface of the first fin in the NMOS region; and

epitaxially growing the second source/drain material over the recessed top surface of the first fin in the NMOS region.

12. A method comprising:

forming a fin protruding above a substrate, the fin having a PMOS region and an NMOS region;

forming a first gate over the fin in the PMOS region;

forming a second gate over the fin in the NMOS region;

forming a first spacer layer over the fin, the first gate, and the second gate;

forming a second spacer layer different from the first spacer layer over the first spacer layer;

forming a patterned mask layer to cover the NMOS region while leaving the PMOS region exposed; and

after forming the patterned mask layer,

performing a first etching process to remove the second spacer layer from a top surface and sidewalls of the fin in the PMOS region;

performing a second etching process to remove the first spacer layer from the top surface and the sidewalls of the fin in the PMOS region, thereby exposing the top surface and the sidewalls of the fin in the PMOS region; and

epitaxially growing a first semiconductor material along the top surface and the sidewalls of the fin in the PMOS region.

13. The method of claim 12 , wherein the first spacer layer is formed using a material selected from the group consisting essentially of silicon oxycarbide, silicon oxycarbonitride, and silicon carbontride, and wherein the second spacer layer is formed using a material selected from the group consisting essentially of silicon nitride and silicon carbonitride.

14. The method of claim 12 , wherein the first etching process comprises a dry etch process, and the second etching process comprises a wet etch process.

15. The method of claim 12 , wherein performing the first etching process comprises performing a plasma etch process using carbon monoxide, tetrafluoromethane, oxygen, or ozone.

16. The method of claim 12 , further comprising:

after epitaxially growing the first semiconductor material, removing the patterned mask layer;

recessing a top surface of the fin in the NMOS region; and

epitaxially growing a second semiconductor material over the recessed top surface of the fin in the NMOS region.

17. A method comprising:

forming a fin protruding above a substrate, the fin having a first portion in a PMOS region and having a second portion in an NMOS region;

forming a first gate structure over the first portion of the fin in the PMOS region;

forming a second gate structure over the second portion of the fin in the NMOS region;

forming first epitaxial source/drain regions on opposing sides of the first gate structure and over the first portion of the fin, the first epitaxial source/drain regions being in the PMOS region and extending along a first upper surface and first sidewalls of the first portion of the fin; and

forming second epitaxial source/drain regions on opposing sides of the second gate structure and over the second portion of the fin, the second epitaxial source/drain regions being in the NMOS region and over a second upper surface of the second portion of the fin in the NMOS region.

18. The method of claim 17 , wherein a lowermost surface of the second epitaxial source/drain regions is formed to contact the second upper surface of the second portion of the fin in the NMOS region.

19. The method of claim 17 , further comprising:

forming a first spacer layer over the first portion of the fin and over the second portion of the fin;

forming a second spacer layer over the first spacer layer;

removing the first spacer layer and the second spacer layer from the first upper surface and the first sidewalls of the first portion of the first fin; and

removing the second spacer layer from the second upper surface and second sidewalls of the second portion of the fin while keeping the first spacer layer on the second upper surface and the second sidewalls of the second portion of the fin.

20. The method of claim 17 , wherein the first upper surface of the first portion of the fin is formed to extend further from the substrate than the second upper surface of the second portion of the fin.