Laser annealing qubits for optimized frequency allocation
A qubit may be formed by forming a Josephson junction between two capacitive plates. The Josephson junction may be an aluminum/aluminum-oxide/aluminum trilayer Josephson junction on a substrate. The Josephson junction may be annealed with a thermal source. Annealing the Josephson junction may alter the frequency of the qubit.
1. A method for forming a qubit, the method comprising:
forming a Josephson junction between two capacitive plates, wherein the Josephson junction is an aluminum/aluminum-oxide/aluminum trilayer Josephson junction on a substrate; and
annealing the Josephson junction with a thermal source, wherein the thermal source is a laser that generates a beam, the beam having a diameter that is greater than a diameter of the Josephson junction, wherein the diameter of the beam encompasses one or more portions of each of the two capacitive plates, and wherein annealing the Josephson junction alters the frequency of the qubit.
2. The method of claim 1 , wherein the substrate is a Silicon substrate.
3. The method of claim 1 , wherein the substrate is a sapphire substrate.
4. The method of claim 1 , wherein the substrate is a magnesium oxide substrate.
5. The method of claim 1 , wherein each aluminum layer of the aluminum/aluminum-oxide/aluminum trilayer is connected to a respective niobium capacitive plate.
6. The method of claim 1 , wherein the beam has a 532 nm wavelength.
7. The method of claim 6 , wherein the beam is a Gaussian beam.
8. The method of claim 7 , wherein the beam is directed toward the Josephson junction.
9. The method of claim 8 , wherein the beam directly illuminates the Josephson junction.
10. The method of claim 9 , wherein the beam heats the substrate.
11. The method of claim 10 , wherein the beam heats the aluminum portions of the aluminum/aluminum-oxide/aluminum trilayer Josephson junction.
12. The method of claim 11 , wherein the beam further heats the aluminum-oxide portion of the aluminum/aluminum-oxide/aluminum trilayer Josephson junction.
13. The method of claim 6 , wherein annealing the Josephson junction with the thermal source includes the beam uniformly increasing the temperature of the Josephson junction.
14. The method of claim 13 , wherein uniformly increasing the temperature of the Josephson junction comprises applying the thermal source to the Josephson junction as a function of time and a power level of the thermal source, wherein the function of time and the power level of the thermal source are based on the wavelength of the beam and a chosen frequency alteration of the qubit, and wherein the thermal source is automatically shut-off based on the function of time and the power level.
15. The method of claim 14 , wherein automatically shutting-off the thermal source based on the function of time and the power level comprises:
splitting, using a polarizing beam splitter, the beam into a first half directed in a first beam path and a second half directed in a second beam path, wherein the first beam path directs the first half towards the Josephson junction, and wherein the second beam path directs the second half towards a beam intensity meter; and
identifying, from the beam intensity meter, the power level of the thermal source.
16. The method of claim 13 , wherein annealing the Josephson junction to alter the frequency of the qubit increases the frequency of the qubit when the thermal source is at a high-power setting, wherein the high-power setting includes the thermal source being above 1.4 watts for a selected amount of time.
17. The method of claim 13 , wherein annealing the Josephson junction to alter the frequency of the qubit decreases the frequency of the qubit when the thermal source is at a low-power setting, wherein the low-power setting includes the thermal source being below 1.4 watts for a selected amount of time.