Bulk acoustic wave devices with temperature-compensating niobium alloy electrodes
A bulk acoustic wave (BAW) resonator having a first electrode, a second electrode, and a piezoelectric layer between the first electrode and the second electrode. The first electrode is of a first electrode material. The second electrode is of a second electrode material. The piezoelectric layer is of a piezoelectric material doped with at least one rare earth element. The BAW resonator has a resonant frequency dependent at least in part on respective thicknesses and materials of the first electrode, the second electrode and the piezoelectric layer. The resonant frequency has a temperature coefficient. At least one of the first electrode and the second electrode includes a niobium alloy electrode material that, relative to molybdenum as the electrode material, reduces the temperature coefficient of the resonant frequency of the BAW resonator.
1. A bulk acoustic wave (BAW) resonator, comprising:
a first electrode of a first electrode material, the first electrode having a first electrode thickness;
a second electrode of a second electrode material, the second electrode having a second electrode thickness; and
a piezoelectric layer between the first electrode and the second electrode, the piezoelectric layer comprising a piezoelectric material doped with at least one rare earth element, and having a piezoelectric layer thickness; in which:
the BAW resonator has a resonant frequency dependent at least in part on the first electrode thickness, the first electrode material, the second electrode thickness, the second electrode material, the piezoelectric layer thickness, and the piezoelectric material, the resonant frequency having a temperature coefficient; and
at least one of the first electrode material and the second electrode material is a niobium alloy that, relative to molybdenum as the respective at least one of the first electrode material and the second electrode material, reduces the temperature coefficient of the resonant frequency of the BAW resonator.
2. The BAW resonator of claim 1 , in which the niobium alloy comprises niobium and molybdenum.
3. The BAW resonator of claim 2 , in which the niobium alloy has a positive temperature coefficient of frequency.
4. The BAW resonator of claim 1 , in which the niobium alloy comprises niobium and hafnium.
5. The BAW resonator of claim 4 , in which the niobium alloy has a hafnium percentage ranging from 5% to 20%.
6. The BAW resonator of claim 1 , in which the niobium alloy comprises niobium and zirconium.
7. The BAW resonator of claim 6 , in which the niobium alloy has a zirconium percentage ranging from 5% to 10%.
8. The BAW resonator of claim 1 , in which the piezoelectric material comprises aluminum nitride and the at least one rare earth element is scandium.
9. The BAW resonator of claim 8 , in which an atomic percentage of scandium in the piezoelectric material ranges from 0.5% to 10.0%.
10. The BAW resonator of claim 8 , in which an atomic percentage of scandium in the piezoelectric material ranges from 0.5% to 44.0%.
11. The BAW resonator of claim 8 , in which an atomic percentage of scandium in the piezoelectric material ranges from 2.5% to 5.0%.
12. The BAW resonator of claim 1 , in which the piezoelectric material comprises aluminum nitride and the rare earth elements are scandium and erbium.
13. The BAW resonator of claim 1 , in which both the first electrode material and the second electrode material are niobium alloys.
14. The BAW resonators of claim 1 , in which, for a specified electromechanical coupling coefficient k t 2 and series resonance frequency F s of the BAW resonator, the first electrode and the second electrode are each greater in thickness than a first electrode and a second electrode, respectively, of a BAW resonator comprising an undoped piezoelectric layer.
15. The BAW resonator of claim 14 , in which, for the specified electromechanical coupling coefficient and series resonance frequency, the piezoelectric layer comprising the piezoelectric material doped with at least one rare earth element is thinner than the undoped piezoelectric layer.
16. The BAW resonator of claim 1 , additionally comprising:
an acoustic reflector adjacent the first electrode, and
an active region where the acoustic reflector, the first electrode, the piezoelectric layer and the second electrode all overlap.
17. The BAW resonator of claim 16 , in which, in a plane parallel to a major surface of the piezoelectric layer, the second electrode comprises a first region and a second region contiguous with the first region, the first region spaced from the piezoelectric layer by a gap, the second region contacting the piezoelectric layer.
18. The BAW resonator claim 17 , in which the first region of the second electrode extends outside the active region of the BAW resonator.
19. A bulk acoustic wave (BAW) resonator, comprising:
a first electrode of a first electrode material, the first electrode having a first electrode thickness;
a second electrode of a second electrode material, the second electrode having a second electrode thickness; and
a piezoelectric layer between the first electrode and the second electrode, the piezoelectric layer comprising a piezoelectric material doped with at least one rare earth element, and having a piezoelectric layer thickness; in which:
the BAW resonator has a resonant frequency dependent at least in part on the first electrode thickness, the first electrode material, the second electrode thickness, the second electrode material, the piezoelectric layer thickness, and the piezoelectric material, the resonant frequency having a temperature coefficient; and
at least one of the first electrode material and the second electrode material comprises a niobium and molybdenum alloy that, relative to molybdenum as the respective at least one of the first electrode material and the second electrode material, reduces the temperature coefficient of the resonant frequency of the BAW resonator, wherein the niobium and molybdebum alloy has a niobium percentage in the range of 50% to 90%, or a niobium percentage in the range of 65% to 75%, or a niobium percentage in the range of 68% to 72%.
20. The BAW resonator of claim 19 , in which the piezoelectric material comprises aluminum nitride and the rare earth elements are scandium and erbium.
21. The BAW resonator of claim 19 , in which both the first electrode material and the second electrode material are niobium and molybdenum alloys.
22. The BAW resonators of claim 19 , in which, for a specified electromechanical coupling coefficient k t 2 and series resonance frequency F s of the BAW resonator, the first electrode and the second electrode are each greater in thickness than a first electrode and a second electrode, respectively, of a BAW resonator comprising an undoped piezoelectric layer.
23. The BAW resonator of claim 22 , in which, for the specified electromechanical coupling coefficient and series resonance frequency, the piezoelectric layer comprising the piezoelectric material doped with at least one rare earth element is thinner than the undoped piezoelectric layer.
24. The BAW resonator of claim 19 , additionally comprising:
an acoustic reflector adjacent the first electrode, and
an active region where the acoustic reflector, the first electrode, the piezoelectric layer and the second electrode all overlap.
25. The BAW resonator of claim 24 , in which, in a plane parallel to a major surface of the piezoelectric layer, the second electrode comprises a first region and a second region contiguous with the first region, the first region spaced from the piezoelectric layer by a gap, the second region contacting the piezoelectric layer.
26. The BAW resonator claim 25 , in which the first region of the second electrode extends outside the active region of the BAW resonator.
27. The BAW resonator of claim 26 , in which:
the second electrode additionally comprises a third region contiguous with the second region and opposite the first region, and a fourth region contiguous with the third region and opposite the second region;
the third region extends across a termination of the active region and is separated from the piezoelectric layer by a gap; and
the fourth region is outside the active region and is in contact with the piezoelectric layer.
28. A bulk acoustic wave (BAW) resonator, comprising:
a first electrode of a first electrode material, the first electrode having a first electrode thickness;
a second electrode of a second electrode material, the second electrode having a second electrode thickness;
a piezoelectric layer between the first electrode and the second electrode, the piezoelectric layer comprising a piezoelectric material doped with at least one rare earth element, and having a piezoelectric layer thickness;
an acoustic reflector adjacent the first electrode, and
an active region where the acoustic reflector, the first electrode, the piezoelectric layer and the second electrode all overlap in which:
the BAW resonator has a resonant frequency dependent at least in part on the first electrode thickness, the first electrode material, the second electrode thickness, the second electrode material, the piezoelectric layer thickness, and the piezoelectric material, the resonant frequency having a temperature coefficient;
at least one of the first electrode material and the second electrode material is a niobium alloy that, relative to molybdenum as the respective at least one of the first electrode material and the second electrode material, reduces the temperature coefficient of the resonant frequency of the BAW resonator;
in a plane parallel to a major surface of the piezoelectric layer, the second electrode comprises a first region and a second region contiguous with the first region, the first region spaced from the piezoelectric layer by a gap, the second region contacting the piezoelectric layer;
the second electrode additionally comprises a third region contiguous with the second region and opposite the first region, and a fourth region contiguous with the third region and opposite the second region;
the third region extends across a termination of the active region and is separated from the piezoelectric layer by a gap; and
the fourth region is outside the active region and is in contact with the piezoelectric layer.