Method for evaluating warpage of wafer and method for sorting wafer
A method for evaluating warpage of a wafer, includes measuring the warpage of the wafer that is in a free state without suction and determining, from measured warpage data, a wafer warpage amount A between two points Q 1 and Q 2 and a wafer warpage amount B between two points R 1 and R 2 , the points Q 1 and Q 2 being located on a straight line passing through an arbitrary point P in a wafer plane and a distance “a” away from the point P, the points R 1 and R 2 being located on the same straight line and a distance “b” away from the point P, the distance “b” differing from the distance “a”, calculating, from the wafer warpage amount A and the wafer warpage amount B, a difference in wafer warpage amount at the point P, and evaluating the warpage on the basis of the difference in wafer warpage amount.
1. A method for selecting a wafer that will not cause overlay failure when used in a photolithography device, the method comprising the steps of:
measuring warpage of the wafer that is in a free state without suction;
determining, from measured data of the warpage of the wafer, a wafer warpage amount A between two points Q 1 and Q 2 , the points Q 1 and Q 2 being located (i) on a straight line passing through an arbitrary point P in a wafer plane, and (ii) a distance “a” away from the point P;
determining, from the measured data of the warpage of the wafer, a wafer warpage amount B between two points R 1 and R 2 , the points R 1 and R 2 being located (i) on the same straight line, and (ii) a distance “b” away from the point P, the distance “b” differing from the distance “a”;
calculating, from the determined wafer warpage amount A and the determined wafer warpage amount B, a pin chuck warpage of the wafer, the pin chuck warpage being a difference in wafer warpage amount at the point P;
determining whether the wafer will cause overlay failure based on the calculated pin chuck warpage; and
upon a determination that the wafer will not cause overlay failure, selecting the wafer to be used in the photolithography device.
2. The method according to claim 1 , wherein the distance “a” and the distance “b” range from 0.5 to 12.5 mm, and the distance “a” minus the distance “b” is 5 mm or more.
3. The method according to claim 1 , wherein the wafer warpage amounts are determined from a height of a front surface of the wafer at the point P, assuming that a height of a back surface of the wafer is 0 at two points a certain distance away from the point P.
4. The method according to claim 2 , wherein the wafer warpage amounts are determined from a height of a front surface of the wafer at the point P, assuming that a height of a back surface of the wafer is 0 at two points a certain distance away from the point P.
5. The method according to claim 1 , wherein calculating the pin chuck warpage includes calculating differences in wafer warpage amount at least at a plurality of arbitrary points on an X-axis and a Y-axis perpendicularly intersecting at a center of the wafer plane.
6. The method according to claim 2 , wherein calculating the pin chuck warpage includes calculating differences in wafer warpage amount at least at a plurality of arbitrary points on an X-axis and a Y-axis perpendicularly intersecting at a center of the wafer plane.
7. The method according to claim 3 , wherein calculating the pin chuck warpage includes calculating differences in wafer warpage amount at least at a plurality of arbitrary points on an X-axis and a Y-axis perpendicularly intersecting at a center of the wafer plane.
8. The method according to claim 4 , wherein calculating the pin chuck warpage includes calculating differences in wafer warpage amount at least at a plurality of arbitrary points on an X-axis and a Y-axis perpendicularly intersecting at a center of the wafer plane.
9. The method according to claim 1 , wherein determining whether the wafer will cause overlay failure based on the calculated pin chuck warpage includes: determining a relationship between pin chuck warpage and a presence of an occurrence of overlay failure.
10. The method according to claim 2 , wherein determining whether the wafer will cause overlay failure based on the calculated pin chuck warpage includes: determining a relationship between pin chuck warpage and a presence of an occurrence of overlay failure.
11. The method according to claim 3 , wherein determining whether the wafer will cause overlay failure based on the calculated pin chuck warpage includes: determining a relationship between pin chuck warpage and a presence of an occurrence of overlay failure.
12. The method according to claim 4 , wherein determining whether the wafer will cause overlay failure based on the calculated pin chuck warpage includes: determining a relationship between pin chuck warpage and a presence of an occurrence of overlay failure.
13. The method according to claim 5 , wherein determining whether the wafer will cause overlay failure based on the calculated pin chuck warpage includes: determining a relationship between pin chuck warpage and a presence of an occurrence of overlay failure.
14. The method according to claim 6 , wherein determining whether the wafer will cause overlay failure based on the calculated pin chuck warpage includes: determining a relationship between pin chuck warpage and a presence of an occurrence of overlay failure.
15. The method according to claim 7 , wherein determining whether the wafer will cause overlay failure based on the calculated pin chuck warpage includes: determining a relationship between pin chuck warpage and a presence of an occurrence of overlay failure.
16. The method according to claim 8 , wherein determining whether the wafer will cause overlay failure based on the calculated pin chuck warpage includes: determining a relationship between pin chuck warpage and a presence of an occurrence of overlay failure.