Polymer brushes for extreme ultraviolet photolithography
A polymer brush with a plurality of repeat units wherein some portions of the repeat units have one or more grafting groups and some portions have one or more interface tuning groups is disclosed. The grafting groups are selected based on the identity of an inorganic substrate, and the interface tuning groups are selected based on the identity of a photoresist that will interact with the groups. A process of lithographic patterning and an electronic device comprising at least one integrated circuit formed by the process of lithographic patterning are disclosed as well. The process comprises providing an inorganic substrate, depositing the disclosed polymer brush onto the inorganic substrate, and depositing a photoresist onto the polymer brush. The process further comprises masking the photoresist with a photomask having a pattern, and applying energy to the masked photoresist to form an etch mask. The inorganic substrate is then etched.
1. A polymer brush, comprising:
a plurality of repeat units;
at least one portion of the plurality of repeat units having one or more grafting groups, wherein the one or more grafting groups are selected based on an identity of an inorganic substrate;
at least one portion of the plurality of repeat units having one or more cleavable groups, wherein the one or more cleavable groups do not bind to the inorganic substrate; and
at least one portion of the plurality of repeat units having one or more interface tuning groups, wherein the one or more interface tuning groups are selected based on an identity of a photoresist.
2. The polymer brush of claim 1 , wherein the one or more grafting groups are independently selected from a group consisting of alkynes, primary hydroxyls, secondary hydroxyls, acrylic acids, epoxies, alkenes, phosphonic acids, propargyls, phosphonic esters, amines, carboxylic acids, and alkoxysilanes.
3. The polymer brush of claim 1 , wherein the one or more interface tuning groups are independently selected from a group consisting of an acidic group, a phenyl group, a methoxy group, an ethylene group, a hydrogen atom, a methyl group, and a trifluoromethyl group.
4. The polymer brush of claim 1 , wherein the one or more cleavable groups are esters.
5. The polymer brush of claim 1 , wherein the one or more interface tuning groups mediate adhesion between the inorganic substrate and the photoresist.
6. The polymer brush of claim 1 , wherein the inorganic substrate is an inorganic hardmask.
7. The polymer brush of claim 6 , wherein the inorganic hardmask comprises a material selected from a group consisting of silicon, titanium nitride, titanium oxides, titanium oxynitrides, tantalum nitride, hafnium oxides, niobium nitride, lanthanum oxide, silicon oxides, silicon oxynitrides, zirconium oxides, and tin oxides.
8. An electronic device, comprising:
at least one integrated circuit chip prepared in an extreme ultraviolet lithographic patterning process, wherein the extreme ultraviolet lithographic patterning process comprises:
providing an inorganic substrate; and
depositing a polymer brush onto the inorganic substrate, wherein the polymer brush comprises:
a plurality of repeat units;
at least one portion of the plurality of repeat units having one or more grafting groups, wherein the one or more grafting groups are selected based on an identity of the inorganic substrate;
at least one portion of the plurality of repeat units having one or more cleavable groups, wherein the one or more cleavable groups do not bind to the inorganic substrate; and
at least one portion of the plurality of repeat units having one or more interface tuning groups, wherein the one or more interface tuning groups are selected based on an identity of a photoresist.
9. The electronic device of claim 8 , further comprising at least one additional circuit chip.