Data storage device
Optimized writing techniques for nonvolatile memory are presented. A microcontroller switches between a first writing mode and a second writing mode to write data to the nonvolatile memory. The switching between the first writing mode and the second writing mode depends on a first accumulated amount of data written to the nonvolatile memory in the first writing mode, or a number of spare blocks of the nonvolatile memory that is evaluated after a garbage collection procedure.
1. A data storage device, comprising:
a nonvolatile memory; and
a microcontroller, writing data to the nonvolatile memory and counting a first accumulated amount of data written to the nonvolatile memory in a first writing mode,
wherein:
when a condition is satisfied by the first accumulated amount of data, the microcontroller switches to write data to the nonvolatile memory in a second writing mode; and
when the condition is not satisfied by the first accumulated amount of data, the microcontroller keeps using the first writing mode to write data to the nonvolatile memory in the first writing mode.
2. The data storage device as claimed in claim 1 , wherein the nonvolatile memory provides less data capacity when the data is written in the first writing mode than in the second writing mode.
3. The data storage device as claimed in claim 1 , wherein the data is written to the nonvolatile memory faster in the first writing mode than in the second writing mode.
4. The data storage device as claimed in claim 1 , wherein the first writing mode is a single level cell (SLC) writing mode.
5. The data storage device as claimed in claim 1 , wherein:
the microcontroller further counts a second accumulated amount of data written to the nonvolatile memory in the second writing mode;
the condition is judged based on the first accumulated amount of data and the second accumulated amount of data.
6. A data storage device, comprising:
a nonvolatile memory; and
a microcontroller, controlling the nonvolatile memory, wherein the microcontroller evaluates a number of spare blocks of the nonvolatile memory after a garbage collection procedure,
wherein:
when a condition is satisfied by the number of spare blocks, the microcontroller uses a first writing mode to write data to the nonvolatile memory; and
when the condition is not satisfied by the number of spare blocks, the microcontroller uses a second writing mode to write data to the nonvolatile memory.
7. The data storage device as claimed in claim 6 , wherein the nonvolatile memory provides less data capacity when the data is written in the first writing mode than in the second writing mode.
8. The data storage device as claimed in claim 6 , wherein the data is written to the nonvolatile memory faster in the first writing mode than in the second writing mode.
9. The data storage device as claimed in claim 6 , wherein the first writing mode is a single level cell (SLC) writing mode.
10. The data storage device as claimed in claim 6 , wherein the condition is judged based on the number of spare blocks and a threshold value.