IP Library Granted Patent US 10,347,457
Granted Patent B1
US 10,347,457 · App. 15/847,485 · Granted Jul 9, 2019

Dynamic temperature control of an ion source

Inventors: Alexander S. Perel, Sr. (Danvers, MA); David P. Sporleder (Billerica, MA); Adam M. McLaughlin (Merrimac, MA); Craig R. Chaney (Gloucester, MA); Neil J. Bassom (Hamilton, MA)
Assignee: Varian Semiconductor Equipment Associates, Inc.
H01J37/023H01J37/30H01J37/3007H01J2237/082
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Quick Facts
Patent No.
US 10,347,457
App. No.
15/847,485
Granted
Jul 9, 2019
Kind
B1
Abstract

A system and method for varying the temperature of a faceplate for an ion source is disclosed. The faceplate is held against the chamber walls of the ion source by a plurality of fasteners. These fasteners may include tension springs or compression springs. By changing the length of the tension spring or compression spring when under load, the spring force of the spring can be increased. This increased spring force increases the compressive force between the faceplate and the chamber walls, creating improved thermal conductivity. In certain embodiments, the length of the spring is regulated by an electronic length adjuster. This electronic length adjuster is in communication with a controller that outputs an electrical signal indicative of the desired length of the spring. Various mechanisms for adjusting the length of the spring are disclosed.

Claims (31)

1. An ion source, comprising:

a plurality of chamber walls;

a faceplate disposed against the chamber walls using compressive force; and

one or more fasteners to secure the faceplate against the chamber walls; wherein the compressive force applied by the fasteners to the faceplate can be electronically varied to adjust a temperature of the faceplate.

2. The ion source of claim 1 , wherein the ion source comprises an indirectly heated cathode.

3. The ion source of claim 1 , wherein the fasteners comprise a fastening device and a force adjuster.

4. The ion source of claim 3 , wherein the force adjuster comprises a spring and an electronic length adjuster to adjust a length of the spring when under load.

5. The ion source of claim 4 , wherein the electronic length adjuster comprises a piezoelectric actuator.

6. The ion source of claim 4 , wherein the electronic length adjuster comprises a solenoid.

7. The ion source of claim 4 , wherein the electronic length adjuster comprises a servo motor and an arm, wherein a proximal end of the arm is attached to a rotating portion of the servo motor.

8. The ion source of claim 4 , wherein the electronic length adjuster comprises a pneumatic cylinder.

9. The ion source of claim 4 , wherein the electronic length adjuster comprises a servo motor and a ball screw.

10. The ion source of claim 4 , wherein the spring comprises a tension spring.

11. The ion source of claim 4 , wherein the spring comprises a compression spring.

12. The ion source of claim 3 , wherein the force adjuster is selected from the group consisting of a windable coil spring; a piezoelectric actuator; a solenoid; a pneumatic cylinder; a servo motor and a ball screw; and a servo motor and an arm, wherein a proximal end of the arm is attached to a rotating portion of the servo motor.

13. An apparatus, comprising:

an ion source, comprising:

a plurality of chamber walls;

a faceplate disposed against the chamber walls; and

one or more fasteners to secure the faceplate against the chamber walls; and

a controller, in communication with the fasteners to adjust a compressive force applied by the fasteners to the faceplate.

14. The apparatus of claim 13 , wherein the fasteners comprise a spring, and an electronic length adjuster, in communication with the controller, to adjust a length of the spring when under load.

15. The apparatus of claim 13 , wherein the controller adjusts the compressive force based on a species of feed gas introduced into the ion source.

16. The apparatus of claim 13 , wherein the controller comprises an input device, and the controller adjusts the compressive force based on input received from the input device.

17. An ion source, comprising:

a plurality of chamber walls; and

a faceplate disposed against the chamber walls;

wherein a temperature of the faceplate is electronically adjustable by varying a thermal conductivity between the faceplate and the chamber walls.

18. The ion source of claim 17 , further comprising a controller, wherein the controller adjusts the thermal conductivity by modifying a compression force between the faceplate and the chamber walls.

19. The ion source of claim 18 , wherein the faceplate is held against the chamber walls by a spring and an electronic length adjuster, wherein the electronic length adjuster adjusts a length of the spring when under load, and the controller modifies the compression force using the electronic length adjuster.

20. The ion source of claim 18 , wherein the compression force is selected based on a feed gas introduced into the ion source.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 30, 2018
From: CHANEY, CRAIG R.; BASSOM, NEIL J.
To: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
Reel/Frame 047636/0831 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 22, 2018
From: PEREL, ALEXANDER S.; SPORLEDER, DAVID P.; MCLAUGHLIN, ADAM M.
To: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
Reel/Frame 044687/0499 →
Cited By (3)
US 12,406,822 US 12,476,087 US 12,725,754