Schemes for selective deposition for patterning applications
Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include depositing a second metal on a first metal without protecting the dielectric, protecting the metal with a cross-linked self-assembled monolayer and depositing a second dielectric on the first dielectric while the metal is protected.
1. A selective deposition method comprising:
providing a substrate having a first metal surface and a first dielectric surface;
depositing a second metal film selectively on the first metal surface to form a second metal surface;
passivating the second metal surface by forming a cross-linked self-assembled monolayer comprising in the range of about 5 to about 20 carbon atoms to form a passivation layer;
depositing a second dielectric film selectively on the first dielectric surface to form a second dielectric surface; and
removing the passivation layer from the second metal surface,
wherein the first dielectric surface is not passivated during deposition of the second metal film.
2. The method of claim 1 , wherein forming the cross-linked self-assembled monolayer comprises exposing the substrate to a SAM precursor and a cross-linking process.
3. The method of claim 2 , wherein the SAM precursor comprises a composition with a head group and a tail group.
4. The method of claim 3 , wherein the head group comprises one or more of a silyl, phosphate or thiol group.
5. The method of claim 4 , wherein the SAM precursor comprises one or more of
where A is the head group.
6. The method of claim 3 , wherein the head group adsorbs to the second metal surface relatively quickly.
7. The method of claim 6 , wherein the tail groups associate through relatively slow van der Waals interaction.
8. The method of claim 2 , wherein the cross-linking process comprises one or more of a chemical reaction, UV light, electron beam or heat.
9. The method of claim 1 , further comprising:
depositing additional second metal film selectively on the second metal surface to grow a thickness of the second metal film;
passivating the second metal surface to form a passivation layer;
depositing additional second dielectric film selectively on the second dielectric surface to grow a thickness of the second dielectric film; and
removing the passivation layer.
10. The method of claim 9 , further comprising repeating depositing additional second metal film, passivating the second metal surface, depositing additional second dielectric film and removing the passivation layer to grow a second metal film of a predetermined thickness and a second dielectric film of a predetermined thickness.
11. The method of claim 10 , wherein the second metal film is different from the first metal surface and the second dielectric film is different from the first dielectric surface.
12. A selective deposition method comprising:
(a) providing a substrate having a first metal surface and a first dielectric surface;
(b) passivating the metal surface with a cross-linked self-assembled monolayer to form a passivation layer, wherein passivating the metal surface comprises exposing the metal surface to a compound having a head group, carbon chain and tail group that forms a self-assembled monolayer, the carbon chain having in the range of about 5 to about 20 carbon atoms and the tail group including a hydrophobic moiety;
(c) depositing a second dielectric film selectively on the first dielectric surface to form a second dielectric surface;
(d) removing the passivation layer;
(e) depositing a second metal film selectively on the first metal surface to form a second metal surface; and
(f) repeating (b) through (e) to grow the second dielectric film and the second metal film to form a second dielectric film of a predetermined thickness and a second metal film of a predetermined thickness,
wherein the dielectric surface is not passivated during deposition of the second metal film.
13. The method of claim 12 , wherein forming the cross-linked self-assembled monolayer comprises exposing the substrate to a SAM precursor and a cross-linking process.
14. The method of claim 13 , wherein the SAM precursor comprises a composition with a head group and a tail group.
15. The method of claim 14 , wherein the head group comprises one or more of a silyl, phosphate or thiol group.
16. The method of claim 15 , wherein the SAM precursor comprises one or more of
where A is the head group.
17. The method of claim 14 , wherein the head group adsorbs to the second metal surface relatively quickly.
18. The method of claim 14 , wherein the tail groups associate through relatively slow van der Waals interaction.
19. The method of claim 13 , wherein the cross-linking process comprises one or more of a chemical reaction, UV light, electron beam or heat.
20. A selective deposition method comprising:
providing a substrate having a first metal with a first metal surface and a first dielectric with a first dielectric surface;
depositing a film of a second metal selectively on the first metal surface to form a second metal film with a second metal surface, the second metal different from the first metal;
passivating the second metal surface by forming a cross-linked self-assembled monolayer comprising a carbon chain having in the range of about 5 to about 20 carbon atoms to form a passivation layer, the cross-linked self-assembled monolayer formed by exposing the substrate to a SAM precursor and a cross-linking process comprising one or more of a chemical reaction, UV light, electron beam or heat;
depositing a film of a second dielectric selectively on the first dielectric surface to form a second dielectric film with a second dielectric surface, the second dielectric different from the first dielectric; and
removing the passivation layer from the second metal surface,
wherein the first dielectric surface is not passivated during deposition of the second metal film.