Semiconductor device having a triple region resurf structure
View Patent ↗A semiconductor device according to an embodiment includes a semiconductor layer having first and second planes; first and second electrodes; a first semiconductor region of a first conductivity type in the semiconductor layer; a second semiconductor region of a second conductivity type between the first semiconductor region and the first plane; and a third semiconductor region of the second conductivity type surrounding the second semiconductor region. The third semiconductor region includes a first region, a second region, and a third region. A first region, a second region, and a third region are closer to the second semiconductor region in this order. An amount of second-conductivity-type impurities in the first region, the second region, and the third region is less than that of the second semiconductor region. An amount of second-conductivity-type impurities in the second region is higher than that in the first region and the third region.
1. A semiconductor device comprising:
a semiconductor layer having a first plane and a second plane;
a first electrode in contact with the first plane;
a second electrode in contact with the second plane;
a first semiconductor region of a first conductivity type provided in the semiconductor layer;
a second semiconductor region of a second conductivity type provided between the first semiconductor region and the first plane, the second semiconductor region being in contact with the first plane, the second semiconductor region being electrically connected to the first electrode; and
a third semiconductor region of the second conductivity type surrounding the second semiconductor region, the third semiconductor region provided between the first semiconductor region and the first plane, the third semiconductor region being in contact with the first plane, the third semiconductor region including a first region, a second region, and a third region, the second region being further away from the second semiconductor region than the first region, the third region being further away from the second semiconductor region than the second region,
wherein an amount of second-conductivity-type impurities in the first region, the second region, and the third region is less than an amount of second-conductivity-type impurities in the second semiconductor region,
an amount of second-conductivity-type impurities in at least a portion of the first region is less than an amount of second-conductivity-type impurities in at least a portion of the second region, and
an amount of second-conductivity-type impurities in at least a portion of the third region is less than an amount of second-conductivity-type impurities in at least a portion of the second region.
2. The semiconductor device according to claim 1 ,
wherein a depth of at least a portion of the first region is less than a depth of at least a portion of the second region.
3. The semiconductor device according to claim 1 ,
wherein a second-conductivity-type impurity concentration of at least a portion of the first region is lower than a second-conductivity-type impurity concentration of at least a portion of the second region.
4. The semiconductor device according to claim 1 ,
wherein an amount of second-conductivity-type impurities in at least a portion of the first region is equal to or less than 90% of an amount of second-conductivity-type impurities in at least a portion of the second region.
5. The semiconductor device according to claim 1 , further comprising:
a fourth semiconductor region of the first conductivity type provided between the first region and the first semiconductor region, the fourth semiconductor region having a higher first-conductivity-type impurity concentration than the first semiconductor region.
6. The semiconductor device according to claim 1 ,
wherein a width of a portion, in which an amount of second-conductivity-type impurities is less than an amount of second-conductivity-type impurities in at least a portion of the second region, in the first region is equal to or greater than 10% and equal to or less than 40% of a width of the third semiconductor region.
7. The semiconductor device according to claim 1 ,
wherein an amount of second-conductivity-type impurities in an second region and an amount of second-conductivity-type impurities in the third region are reduced as a distance from the second semiconductor region increases.
8. The semiconductor device according to claim 1 ,
wherein an amount of second-conductivity-type impurities in at least a portion of the third region is more than an amount of second-conductivity-type impurities in at least a portion of the second region.
9. The semiconductor device according to claim 1 , further comprising:
an insulating layer provided on the first plane; and
a first conductive layer provided above a boundary between the first region and the second region, the insulating layer being interposed between the first conductive layer and the first plane.
10. The semiconductor device according to claim 9 , further comprising:
a second conductive layer provided above a boundary between the second region and the third region, the insulating layer being interposed between the second conductive layer and the first plane.
11. The semiconductor device according to claim 1 ,
wherein the first conductivity type is an n type and the second conductivity type is a p type.