Thin film transistor with multi-layer source/drain electrodes
A semiconductor device for miniaturization is provided. The semiconductor device includes a semiconductor layer; a first electrode and a second electrode that are on the semiconductor layer and apart from each other over the semiconductor layer; a gate electrode over the semiconductor layer; and a gate insulating layer between the semiconductor layer and the gate electrode. The first and second electrodes comprise first conductive layers and second conductive layers. In a region overlapping with the semiconductor layer, the second conductive layers are positioned between the first conductive layers, and side surfaces of the second conductive layers are in contact with side surfaces of the first conductive layers. The second conductive layers have smaller thicknesses than those of the first conductive layers, and the top surface levels of the second conductive layers are lower than those of the first conductive layers.
1. A semiconductor device comprising:
a semiconductor layer over a first insulating film;
a first conductive layer and a second conductive layer over and in physical contact with the semiconductor layer and the first insulating film;
a second insulating film over the first conductive layer and the second conductive layer; and
a gate electrode overlapping with the semiconductor layer,
wherein the second conductive layer is thinner than the first conductive layer, and
wherein the second conductive layer is in physical contact with a part of an upper surface of the first conductive layer.
2. The semiconductor device according to claim 1 , wherein the semiconductor layer comprises an oxide semiconductor, and
wherein the first conductive layer is in physical contact with a side surface of the semiconductor layer.
3. The semiconductor device according to claim 1 ,
wherein the first conductive layer comprises tungsten, and
wherein the second conductive layer comprises titanium nitride.
4. A semiconductor device comprising:
a semiconductor layer over an insulating surface;
a first conductive layer, a second conductive layer, a third conductive layer, and a fourth conductive layer over and in physical contact with the semiconductor layer;
a gate insulating film over the first conductive layer, the second conductive layer, the third conductive layer, the fourth conductive layer, and the semiconductor layer; and
a gate electrode overlapping with the semiconductor layer with the gate insulating film interposed therebetween,
wherein the third conductive layer is in physical contact with a side surface and a part of an upper surface of the first conductive layer,
wherein the fourth conductive layer is in physical contact with a side surface and a part of a part of an upper surface of the second conductive layer,
wherein the third conductive layer is thinner than the first conductive layer,
wherein the fourth conductive layer is thinner than the second conductive layer,
wherein the third conductive layer surrounds the first conductive layer, and
wherein the fourth conductive layer surrounds the second conductive layer.
5. The semiconductor device according to claim 4 , wherein the semiconductor layer comprises an oxide semiconductor.
6. The semiconductor device according to claim 4 ,
wherein the first conductive layer and the second conductive layer comprise tungsten, and
wherein the third conductive layer comprises titanium nitride.
7. A semiconductor device comprising:
a semiconductor layer over an insulating surface;
a first conductive layer and a second conductive layer over the semiconductor layer;
a third conductive layer over and in physical contact with the semiconductor layer and the first conductive layer;
a fourth conductive layer over and in physical contact with the semiconductor layer and the second conductive layer;
an insulating film over the first conductive layer, the second conductive layer, the third conductive layer, the fourth conductive layer, and the semiconductor layer; and
a gate electrode over the insulating film,
wherein an end portion of the third conductive layer and an end portion of the fourth conductive layer are positioned between an end portion of the first conductive layer and an end portion of the second conductive layer over the semiconductor layer,
wherein each of the third conductive layer and the fourth conductive layer has a smaller thickness than that of each of the first conductive layer and the second conductive layer,
wherein the third conductive layer is in contact with a side surface and a part of an upper surface of the first conductive layer,
wherein the fourth conductive layer is in contact with a side surface and a part of an upper surface of the second conductive layer,
wherein the third conductive layer surrounds the first conductive layer, and
wherein the fourth conductive layer surrounds the second conductive layer.
8. The semiconductor device according to claim 7 , wherein the semiconductor layer comprises an oxide semiconductor.
9. The semiconductor device according to claim 7 ,
wherein the first conductive layer and the second conductive layer comprise tungsten, and
wherein the third conductive layer comprises titanium nitride.