Device for emitting and detecting photons and method of producing the same
A single device for emitting and detecting photons. The device comprises a semiconductive layer ( 3 ), active material ( 5 ), further dielectric layer ( 17 ) and overlying electrode ( 25 ). In a first mode of operation an electrical field is applied between the semiconductive layer ( 3 ) and the overlying electrode ( 25 ). This enables photons to be emitted from the active material ( 5 ). In a second mode of operation, the semiconductive layer ( 3 ) constitutes a channel of a field effect transistor ( 23 ). The field effect transistor further comprises source electrode ( 11 ), drain electrode ( 15 ), gate electrode ( 13 ) and dielectric layer ( 19 ). Photons absorbed by the active material ( 5 ) causes charge to be transferred to the semiconductive layer ( 3 ), thereby changing the channel resistance. A plurality of such devices can be arranged in a configurable array.
1. An apparatus comprising:
a material positioned between a semiconductive layer and a conductive layer;
wherein the semiconductive layer comprises graphene and the graphene forms a graphene field effect transistor; and
wherein the semiconductive layer and the conductive layer are configured such that in a first mode of operation the material acts as a photon emitter and in a second mode of operation the material acts as a photon detector.
2. An apparatus as claimed in claim 1 wherein in the first mode of operation an electric field is applied between the semiconductive layer and the conductive layer.
3. An apparatus as claimed in claim 1 wherein the semiconductive layer is connected to a source electrode and a drain electrode such that in the second mode of operation the semiconductive layer provides a channel within a field effect transistor.
4. An apparatus as claimed in claim 1 wherein the semiconductive layer and the conductive layer are arranged such that the apparatus can be configured in the first mode of operation at a first time and in the second mode of operation at a second, different time.
5. An apparatus as claimed in claim 1 wherein the material comprises quantum dots.
6. An apparatus as claimed in claim 1 wherein a dielectric layer is provided between the material and the conductive layer.
7. An apparatus as claimed in claim 1 wherein a hole transport layer is provided between the material and the semiconductive layer.
8. An apparatus as claimed in claim 1 wherein an electron transport layer is provided between the material and the conductive layer.
9. An apparatus as claimed in claim 1 comprising at least one of a barrier, a microlens array or fiber optic faceplate configured to prevent illumination from an adjacent apparatus.
10. An apparatus as claimed in claim 1 comprising control circuitry configured to control the mode of operation of the apparatus.
11. An array comprising a plurality of apparatus, at least one of the plurality of apparatus respectively comprising:
a material positioned between a semiconductive layer and a conductive layer;
wherein the semiconductive layer comprises graphene and the graphene forms a graphene field effect transistor; and
wherein the semiconductive layer and the conductive layer are configured such that in a first mode of operation the material acts as a photon emitter and in a second mode of operation the material acts as a photon detector.
12. An array as claimed in claim 11 wherein a first subset of one or more of the plurality of apparatus are configured in the first mode of operation and a second subset of one or more of the plurality of apparatus are configured in the second mode of operation.
13. An array as claimed in claim 12 wherein at least one apparatus can be arranged within different subsets at different times.
14. A method comprising:
providing a material between a semiconductive layer and a conductive layer;
wherein the semiconductive layer comprises graphene and the graphene forms a graphene field effect transistor; and
configuring the semiconductive layer and the conductive layer such that in a first mode of operation the material acts as a photon emitter and in a second mode of operation the material acts as a photon detector.
15. A method as claimed in claim 14 , wherein in the first mode of operation an electric field is applied between the semiconductive layer and the conductive layer.
16. A method as claimed in claim 14 , wherein the semiconductive layer is connected to a source electrode and a drain electrode such that in the second mode of operation the semiconductive layer provides a channel within a field effect transistor.
17. A method as claimed in claim 14 , further comprising configuring the material in the first mode of operation at a first time and in the second mode of operation at a second, different time.
18. A method as claimed in claim 14 , wherein the material comprises quantum dots.
19. A method as claimed in claim 14 , further comprising providing a dielectric layer between the material and the conductive layer.
20. A method as claimed in claim 14 , further comprising providing a hole transport layer between the material and the semiconductive layer.