Magnetic memory devices having conductive pillar structures including patterning residue components
Methods of manufacturing a semiconductor device include forming a conductive layer on a substrate, forming an air gap or other cavity between the conductive layer and the substrate, and patterning the conductive layer to expose the air gap. The methods may further include forming conductive pillars between the substrate and the conductive layer. The air gap may be positioned between the conductive pillars.
1. A magnetic memory device comprising:
a substrate;
contacts disposed on the substrate;
conductive pillars disposed on the contacts;
magnetic tunnel junction structures disposed on the conductive pillars;
residual mold patterns provided under the magnetic tunnel junction structures, the residual mold patterns surrounding upper portions of the conductive pillars; and
conductive etch residue layers on lower sidewalls of the conductive pillars below the residual mold patterns.
2. The magnetic memory device of claim 1 , wherein the residual mold patterns are ring shaped.
3. The magnetic memory device of claim 1 , wherein sidewalls of the residual mold patterns are substantially coplanar with sidewalls of the magnetic tunnel junction structures disposed on the residual mold patterns.
4. The magnetic memory device of claim 1 , wherein bottom surfaces of the residual mold patterns are higher than bottom surfaces of the conductive pillars.
5. The magnetic memory device of claim 1 , further comprising a protection insulating layer extending along sidewalls of the conductive pillars, sidewalls of the magnetic tunnel junction structures, and sidewalls of the residual mold patterns, and wherein the residual mold patterns include a material different from that of the protection insulating layer.
6. The magnetic memory device of claim 5 , further comprising a capping insulating layer provided along a sidewall and a bottom surface of a gap region between the conductive pillars.
7. The magnetic memory device of claim 6 , wherein the capping insulating layer is in contact with bottom surfaces of the magnetic tunnel junction structures.
8. The magnetic memory device of claim 6 , wherein the conductive etch residue layers are disposed between the capping insulating layer and the protection insulating layer.
9. The magnetic memory device of claim 1 , further comprising conductive pads disposed between the contacts and the conductive pillars.
10. The magnetic memory device of claim 1 , further comprising a protection insulating layer extending along a sidewall of at least one of the magnetic tunnel junction structures, a sidewall of at least one of the residual mold patterns and a sidewall of at least one of the conductive etch residue layers, wherein the residual mold patterns include a material different from that of the protection insulating layer.
11. The magnetic memory device of claim 10 , further comprising a capping insulating layer extending between at least one of the residual mold patterns and at least one the conductive pillars and between at least one of the conductive etch residue layers and the at least one of the conductive pillars.
12. A magnetic memory device comprising:
a substrate;
a contact disposed on the substrate;
a conductive pillar disposed on the contact;
a magnetic tunnel junction structure disposed on the conductive pillar;
a residual mold patterns under the magnetic tunnel junction structure and on an upper portion of a sidewall of the conductive pillar; and
a conductive etch residue layer on a lower portion of the sidewall of the conductive pillar below the residual mold pattern.
13. The magnetic memory device of claim 12 , further comprising a protection insulating layer extending along a sidewall of the conductive pillar, a sidewall of the magnetic tunnel junction structure, and a sidewall of the residual mold patterns, and wherein the residual mold pattern includes a material different from that of the protection insulating layer.
14. The magnetic memory device of claim 12 , further comprising a capping insulating layer extending between the sidewall of the conductive pillar and the residual mold pattern and between the sidewall of conductive pillar and the conductive etch residue layer.
15. The magnetic memory device of claim 14 , wherein the capping insulating layer is in contact with a bottom surface of the magnetic tunnel junction structure.