Graphene structure and method for manufacturing the same

1. A graphene structure comprising:

a substrate;

a base graphene layer having a defect on the substrate; and

a linking material selectively provided at the defect of the base graphene layer,

wherein the linking material is combined with carbon of the base graphene layer adjacent to the defect,

wherein the defect of the base graphene comprises a sp3 hybridization type defect covering the substrate and protruding from the substrate, and

the linking material is provided on the sp3 hybridization type defect.

2. The graphene structure of claim 1 , wherein the base graphene layer comprises a first graphene grain having a first crystal orientation and a second graphene grain having a second crystal orientation,

wherein the linking material is provided at the defect between the first graphene grain and the second graphene grain, and

wherein the linking material is combined with carbon of the first graphene grain adjacent to the defect and carbon of the second graphene grain adjacent to the defect so that the linking material connects the carbons of the first and second graphene grains and a sheet resistance of the base graphene layer is decreased as compared to the sheet resistance of a graphene layer without a linking material being selectively provided at the defect of the graphene layer.

3. The graphene structure of claim 1 , wherein the defect of the base graphene layer further comprises at least one of a grain boundary, a point defect and a line defect.

4. The graphene structure of claim 1 , wherein the base graphene layer is in a poly-crystalline state.

5. The graphene structure of claim 1 , wherein carbon of the base graphene layer adjacent to the defect has a dangling bond, and

wherein the linking material passivates the dangling bond.

6. The graphene structure of claim 1 , wherein the graphene structure comprises:

a first portion formed of the base graphene layer and having a first thickness; and

a second portion formed of the linking material and having a second thickness greater than the first thickness.

7. The graphene structure of claim 1 , wherein carbons of the base graphene layer adjacent to the defect are connected to each other by the linking material.

8. The graphene structure of claim 1 , wherein the graphene structure has a higher mobility, a higher thermal conductivity, and a lower vapor transmission rate than a poly-crystalline two-dimensional (2D) graphene layer.

9. The graphene structure of claim 1 , wherein the graphene structure has a higher hardness than a poly-crystalline two-dimensional (2D) graphene layer.

10. The graphene structure of claim 1 , wherein hole and electron mobilities of the graphene structure are more homogeneous than hole and electron mobilities of a poly-crystalline two-dimensional (2D) graphene layer.

11. The graphene structure of claim 1 , wherein the base graphene layer includes a plurality of the defects,

wherein a plurality of the linking materials are provided at the plurality of defects, and

wherein the plurality of linking materials are formed of the same material.

12. A method for manufacturing a graphene structure, the method comprising:

preparing a base substrate;

forming a two-dimensional (2D) base graphene layer having a defect on the base substrate; and

providing a linking material to the defect of the base graphene layer by providing a source onto the base graphene layer, the providing the linking material is performed by an atomic layer deposition method at a temperature of 180 ° C. or less, and

wherein a sheet resistance and a mobility of the graphene structure are adjusted according to a process temperature of the atomic layer deposition method.

13. The method of claim 12 , wherein the linking material has a hexagonal structure or the linking material is selected from the group consisting of ZnO, Al—ZnO, Al 2 O 3 , TiO 2 , a Al 2 O 3 —TiO 2 nanolaminate, a ZnO—TiO 2 nanolaminate, NiS, TiS, Sb 2 S 3 , Zn—HQ, Zn-4MP, Zn—BDT, Al—HQ, Al-4MP, Al—BDT, Ti—HQ, Ti-4MP and Ti—BDT.

14. The method of claim 12 , wherein the providing of the source onto the base graphene layer is performed a plurality of times, and

wherein a resistance of the graphene structure is adjusted according to the number of times of the providing of the source onto the base graphene layer.

15. The method of claim 12 , wherein the linking material is selectively provided to the defect of the base graphene layer.

16. The method of claim 12 , further comprising:

transferring the base graphene layer onto another substrate before the providing of the source onto the base graphene layer.

17. The method of claim 12 , further comprising:

transferring the base graphene layer and the linking material onto another substrate after the providing of the linking material to the defect of the base graphene layer.

18. A graphene structure comprising:

a substrate;

a base graphene layer having a defect on the substrate; and

a linking material provided at the defect of the base graphene layer, wherein the base graphene layer comprises a first graphene grain having a first crystal orientation and a second graphene grain having a second crystal orientation,

wherein the linking material is provided at the defect between the first graphene grain and the second graphene grain,

wherein the linking material is combined with carbon of the first graphene grain adjacent to the defect and carbon of the second graphene grain adjacent to the defect so that the linking material connects the carbons of the first and second graphene grains and a sheet resistance of the base graphene layer is decreased as compared to the sheet resistance of a graphene layer without a linking material being selectively provided at the defect of the graphene layer,

wherein the defect of the base graphene comprises a sp3 hybridization type defect covering the substrate and protruding from the substrate, and

the linking material is provided on the sp3 hybridization type defect.