Semiconductor device
In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×10 18 spins/cm 3 , preferably higher than or equal to 1×10 17 spins/cm 3 and lower than 1×10 18 spins/cm 3 .
1. A semiconductor device comprising:
a gate;
a first insulating film over the gate;
an oxide semiconductor film over the first insulating film;
a source and a drain each electrically connected to the oxide semiconductor film;
a second insulating film over the oxide semiconductor film, the source, and the drain; and
a conductive film over the second insulating film,
wherein:
the gate and the conductive film are in contact with each other so that the oxide semiconductor film is surrounded therewith in a channel width direction,
the second insulating film comprises a first region adjacent to the oxide semiconductor film, and a second region opposite to the first region, and
the first region has a lower oxygen concentration and a lower carbon concentration than the second region.
2. A semiconductor device comprising:
a gate;
a first insulating film over the gate;
an oxide semiconductor film over the first insulating film;
a source and a drain each electrically connected to the oxide semiconductor film;
a second insulating film over the oxide semiconductor film, the source, and the drain; and
a conductive film over the second insulating film,
wherein:
the gate and the conductive film are in contact with each other through an opening in the first and second insulating films,
the second insulating film comprises a first region adjacent to the oxide semiconductor film, and a second region opposite to the first region, and
the first region has a lower oxygen concentration and a lower carbon concentration than the second region.
3. The semiconductor device according to the claim 1 , wherein at least one of the first and second insulating films comprises a region having a nitrogen concentration of 6×10 20 atoms/cm 3 or lower as measured by secondary ion mass spectrometry (SIMS).
4. The semiconductor device according to the claim 2 , wherein at least one of the first and second insulating films comprises a region having a nitrogen concentration of 6×10 20 atoms/cm 3 or lower as measured by secondary ion mass spectrometry (SIMS).
5. The semiconductor device according to claim 1 , wherein the oxide semiconductor film contains In, M, and Zn (M is Al, Ga, Y, Zr, La, Ce, or Nd).
6. The semiconductor device according to claim 2 , wherein the oxide semiconductor film contains In, M, and Zn (M is Al, Ga, Y, Zr, La, Ce, or Nd).
7. The semiconductor device according to claim 1 , wherein the oxide semiconductor film comprises a c-axis aligned crystalline oxide semiconductor.
8. The semiconductor device according to claim 2 , wherein the oxide semiconductor film comprises a c-axis aligned crystalline oxide semiconductor.
9. The semiconductor device according to claim 1 , further comprising:
a second oxide semiconductor film between the first insulating film and the oxide semiconductor film,
wherein the second oxide semiconductor film has a smaller thickness than the oxide semiconductor film.
10. The semiconductor device according to claim 2 , further comprising:
a second oxide semiconductor film between the first insulating film and the oxide semiconductor film,
wherein the second oxide semiconductor film has a smaller thickness than the oxide semiconductor film.