Light-emitting diode structure, transfer assembly, and transfer method using the same

1. A method of transferring light-emitting diode (LED) structures, the method comprising:

forming an epitaxial structure on a growth substrate;

bonding the epitaxial structure to a temporary substrate;

separating the growth substrate from the epitaxial structure bonded to the temporary substrate;

forming LED structures by individualizing the epitaxial structure separated from the growth substrate;

transferring the LED structures onto a transfer assembly by emitting ultraviolet (UV) rays toward the temporary substrate; and

moving the LED structures transferred onto the transfer assembly to a target substrate.

2. The method of claim 1 , further comprising, after the forming of the epitaxial structure:

forming a diffusion barrier layer on the epitaxial structure; and

forming a metal bonding layer on the diffusion barrier layer.

3. The method of claim 2 , further comprising, after the forming of the metal bonding layer:

forming a UV absorption layer,

wherein the UV absorption layer is made of a material whose physical adhesive strength is weakened in response to light of a UV wavelength range or laser light.

4. The method of claim 1 , wherein the temporary substrate comprises:

a temporary substrate body; and

a UV absorption layer formed on the temporary substrate body.

5. The method of claim 4 , wherein the temporary substrate body is made of glass, sapphire, plastic, or a polymer material as a material for passing UV rays.

6. The method of claim 4 , wherein the UV absorption layer includes a material whose physical adhesive strength is weakened in response to light of a UV wavelength range or laser light.

7. The method of claim 6 , wherein the UV absorption layer includes Si including a photoreactant, an acrylic adhesive material, indium tin oxide (ITO), InO2, SnO2, SiO2, SiNx, Al2O3, TiO2, or Ti2O5.

8. The method of claim 6 , wherein the UV rays are absorbed by the UV absorption layer, and the LED structures are separated from the temporary substrate.

9. The method of claim 4 , further comprising:

a metal oxide layer between the temporary substrate body and the UV absorption layer,

wherein the metal oxide layer has a different material and a different thermal expansion coefficient than the UV absorption layer.

10. The method of claim 4 , wherein an additional metal bonding layer is formed on the UV absorption layer.

11. The method of claim 1 , wherein the transfer assembly comprises:

a body unit configured to have a polymer resin; and

ciliary units configured to be formed on the body unit and extend from an upper surface of the body unit to be selectively bonded to the LED structures.

12. The method of claim 1 , further comprising, after the forming of the LED structures:

determining whether the LED structures operate normally.

13. A method of transferring light-emitting diode (LED) structures, the method comprising:

bonding an epitaxial structure formed on a growth substrate to a temporary substrate;

separating the growth substrate from the epitaxial structure;

forming individualized LED structures by etching the epitaxial structure;

determining whether the individualized LED structures operate normally; and

separating selectively the individualized LED structures determined whether operating normally or not from the temporary substrate and moving the separated LED structures to a transfer assembly by using adhesive strength of van der Waals force or capillary attractive force;

wherein the temporary substrate comprises:

a temporary substrate body though which ultraviolet (UV) rays pass; and

an UV absorption layer formed on the temporary substrate body and whose adhesive strength is lowered when the UV rays are absorbed,

wherein the separating of the individualized LED structures from the temporary substrate comprises absorbing, by the UV absorption layer, the UV rays so that the adhesive strength of the UV absorption layer is lowered and the LED structures are separated from the UV absorption layer.

14. The method of claim 13 , wherein the bonding of the epitaxial structure to the temporary substrate comprises:

forming a metal bonding layer on the epitaxial structure; and

bonding the temporary substrate to the metal bonding layer.

15. The method of claim 13 , wherein the UV absorption layer includes Si including a photoreactant, an acrylic adhesive material, Ni, Au, Pd, Ag, Pt, Ti, Al, Cr, Cu, indium tin oxide (ITO), InO2, SnO2, SiO2, SiNx, Al2O3, TiO2, or Ti2O5.

16. The method of claim 13 , wherein the transfer assembly comprises:

a body unit;

ciliary unit bodies configured to be formed to extend from an upper surface of the body unit; and

adsorption units configured to be installed at ends of the ciliary unit bodies and come into contact with surfaces of the LED structures, and

the body unit, the ciliary unit bodies, and the adsorption units are formed of an identical polymer resin material.

17. The method of claim 16 , wherein the transfer assembly has concave shapes in upper surface regions of the adsorption units and further comprises adsorption unit recesses for increasing contact areas between the adsorption units and the LED structures.

18. A method of transferring light-emitting diode (LED) structures, the method comprising:

forming an epitaxial structure on a growth substrate;

bonding the epitaxial structure to a temporary substrate having an ultraviolet (UV) absorption layer;

separating the growth substrate from the epitaxial structure bonded to the temporary substrate;

forming LED structures by individualizing the epitaxial structure separated from the growth substrate;

emitting UV rays toward the temporary structure to lower adhesive strength of the UV absorption layer and bond the LED structures to a transfer assembly;

disposing the LED structures bonded to the transfer assembly on a target substrate; and

removing adhesive strength between the LED structures disposed on the target substrate and the transfer assembly by bending one edge of the transfer assembly.

19. A method of transferring light-emitting diode (LED) structures, the method comprising:

forming an epitaxial structure on a growth substrate;

forming LED structures separated from each other on the growth substrate by individualizing the epitaxial structure;

separating the LED structures from the growth substrate and bonding the separated LED structures to a transfer assembly in which ciliary units are formed; and

separating the LED structures bonded to the transfer assembly from the transfer assembly and transferring the LED structures onto a target substrate.

20. The method of claim 19 , wherein each of the LED structures comprises:

the epitaxial structure configured to have a first semiconductor layer, an active layer, and a second semiconductor layer formed on the growth substrate;

first electrodes configured to be formed on the first semiconductor layer;

second electrodes configured to be formed on the second semiconductor layer; and

a protective layer configured to cover the epitaxial structure and expose parts of the first electrodes and the second electrodes.

21. The method of claim 19 , wherein the transfer assembly comprises:

a body unit; and

a plurality of ciliary units configured to extend from an upper surface of the body unit by a predetermined length, form a predetermined pattern to be selectively bonded to the LED structures, and provide adhesive strength by having molecular attractive force with surfaces of the LED structures.