Light-emitting device, integrated light-emitting device, and light-emitting module

1. A light-emitting device comprising:

a base member having a conductive pattern;

a light-emitting element arranged on the base member so as to be electrically connected to the conductive pattern; and

a dielectric multi-layer film located on an upper surface of the light-emitting element,

wherein the dielectric multi-layer film has a first spectral reflectivity in an emission peak wavelength region of the light-emitting element and a second spectral reflectivity in a region that is located at a longer wavelength side of the emission peak wavelength region by 50 nm, and the second spectral reflectivity is greater by 10% or more than the first spectral reflectivity.

2. The light-emitting device of claim 1 , wherein the first spectral reflectivity is greater than or equal to 70% and less than or equal to 95%.

3. The light-emitting device of claim 1 , wherein a reflection wavelength band of the dielectric multi-layer film upon vertical incidence includes an emission peak wavelength of the light-emitting element, and a portion of the reflection wavelength band on a longer wavelength side of the emission peak wavelength is wider than a portion of the reflection wavelength band on a shorter wavelength side of the emission peak wavelength.

4. The light-emitting device of claim 1 , wherein 25% or more of a total amount of light emitted from the light-emitting device is emitted at elevation angles of less than 20° with respect to an upper surface of the base member.

5. The light-emitting device of claim 1 , further comprising:

an encapsulation member covering the light-emitting element and the dielectric multi-layer film,

wherein a ratio H/W of a height H of the encapsulation member to a width W of the encapsulation member is less than 0.5.

6. The light-emitting device of claim 5 , wherein 40% or more of a total amount of light emitted from the light-emitting device is emitted at elevation angles of less than 20° with respect to an upper surface of the base member.

7. The light-emitting device of claim 6 , wherein the ratio H/W of the height H of the encapsulation member to the width W of the encapsulation member is less than or equal to 0.3.

8. The light-emitting device of claim 1 , wherein the light-emitting element is flip-chip bonded on the base member.

9. An integrated light-emitting device comprising:

a plurality of the light-emitting devices of claim 1 ; and

a plurality of light reflective members arranged between the plurality of light-emitting devices.

10. The integrated light-emitting device of claim 9 , wherein a height of the light reflective member is less than or equal to 0.3 times a distance between the light-emitting devices.

11. The integrated light-emitting device of claim 9 , wherein a height of the light reflective member is less than or equal to 0.2 times a distance between the light-emitting devices.

12. A light-emitting module comprising:

the light-emitting device of claim 1 ; and

a wavelength converting member located on a light-extracting surface side of the light-emitting device, wherein the wavelength converting member is adapted to absorb a portion of light from the light-emitting element and to emit light of a wavelength that is different from an emission wavelength of the light-emitting element.

13. A light-emitting module comprising:

the integrated light-emitting device of claim 9 ; and

a wavelength converting member located on a light-extracting surface side of the light-emitting device, wherein the wavelength converting member is adapted to absorb a portion of light from the light-emitting element and to emit light of a wavelength that is different from an emission wavelength of the light-emitting element.