IP Library › Granted Patent US 10,355,347
Granted Patent B2
US 10,355,347 · App. 15/744,542 · Granted Jul 16, 2019

High frequency device

Inventors: Eiji Suematsu (Sakai, JP); Keisuke Satoh (Sakai, JP)
Assignee: SHARP KABUSHIKI KAISHA
H01Q1/36A61B5/0507G01S7/032H01P3/06H01Q9/045H01Q21/065H03H7/0153A61B2562/0228G01S13/50G01S2007/028H01Q1/2283
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Quick Facts
Patent No.
US 10,355,347
App. No.
15/744,542
Granted
Jul 16, 2019
Kind
B2
Abstract

An area and a size of a high frequency device are reduced. The high frequency device includes a first board ( 1 ) that has a first surface ( 1 a ) on which a circuit unit is formed and a second surface ( 1 b ) on which a ground conductor is formed, a second board ( 2 ) that has a third surface ( 2 a ) on which an antenna is formed and a fourth surface ( 2 b ) on which a second ground conductor is formed, and a conductor plate ( 3 ), in which the conductor plate ( 3 ) is sandwiched between the second surface ( 1 b ) and the fourth surface ( 2 b ).

Claims (42)

1. A high frequency device, comprising:

a first single layer board that includes a first surface on which a high frequency circuit and a conductor pattern are formed and a second surface on which a first ground conductor is formed;

a second single layer board that includes a third surface on which an antenna is formed and a fourth surface on which a second ground conductor is formed;

a conductor plate that includes a through opening;

an armor that is configured by a conductor;

through holes that pass through the first single layer board, the second single layer board, and the conductor plate in a straight manner; and

a plurality of screws, wherein

the conductor pattern is

in contact with the armor and

connected to the first ground conductor via a plurality of via holes,

the conductor plate is

sandwiched between the second surface and the fourth surface and

integrated with the first ground conductor and the second ground conductor to configure a ground conductor with respect to both the first single layer board and the second single layer board,

the through opening of the conductor plate, a through hole conductor of the first single layer board, and a through hole conductor of the second single layer board are formed so that center axes thereof are on a straight line, in a case where the first single layer board and the second single layer board sandwich the conductor plate,

the through opening of the conductor plate, the through hole conductor of the first single layer board, and the through hole conductor of the second single layer board are formed so that inner diameters thereof are equivalent,

the through holes include a plurality of first type through holes through which the screws pass, and

by inserting the screws into the first type through holes, the armor, the first single layer board, the second single layer board, and the conductor plate are fixed to each other and grounded.

2. The high frequency device according to claim 1 , further comprising

a partition conductor, wherein

the high frequency circuit includes at least one oscillator,

the conductor pattern includes a part that is formed so as to surround the oscillator, and

the partition conductor is in contact with the part of the conductor pattern, which is formed so as to surround the oscillator, and

forms a chamber in which the oscillator oscillates.

3. The high frequency device according to claim 1 , wherein

a transmission line of the high frequency circuit and the first ground conductor form a microstrip line, and

the antenna and the second ground conductor form a microstrip antenna.

4. The high frequency device according to claim 1 , wherein

the high frequency circuit and the antenna are connected only by a coaxial line.

5. The high frequency device according to claim 1 , wherein

the through holes include a second type through hole an inner wall of which is formed of a conductor,

the high frequency circuit and the antenna are connected by a coaxial line, and

the second type through hole and a conductor pin in an inside of the second type through hole form the coaxial line.

6. The high frequency device according to claim 5 , wherein

a dielectric is provided in a periphery of the conductor pin.

7. The high frequency device according to claim 5 , wherein

the first single layer board includes a through opening,

the second single layer board includes a through opening,

the through hole conductor of the first single layer board covers an inner wall of the through opening of the first single layer board,

the through hole conductor of the second single layer board covers an inner wall of the through opening of the second single layer board, and

the second type through hole includes the through opening of the first single layer board, the inner wall of which is covered by the through hole conductor of the first single layer board, the through opening of the conductor plate, and the through opening of the second single layer board, the inner wall of which is covered by the through hole conductor of the second single layer board.

8. The high frequency device according to claim 5 , wherein

the coaxial line has characteristic impedance that is controlled on a basis of a relation of an inner diameter of the second type through hole and an outer diameter of the conductor pin.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 12, 2018
From: SUEMATSU, EIJI; SATOH, KEISUKE
To: SHARP KABUSHIKI KAISHA
Reel/Frame 044611/0217 →
Priority Claims (1)
JP 2015-166906 · Aug 26, 2015 · national
Continuity (1)
Related Publication 20190006745A1 · Jan 3, 2019