Photonic crystal laser and strain measuring device

1. A method for fabricating a photonic crystal laser, comprising:

forming an etch-stop layer on a substrate;

forming a buffer layer on the etch-stop layer;

forming a photonic crystal active layer on the buffer layer;

coating a resist on the photonic crystal active layer and patterning the coated resist to form a resist mask;

dry-etching the photonic crystal active layer and the buffer layer using the resist mask as an etch mask to form a two-dimensionally disposed photonic crystal structure;

selectively wet-etching the buffer layer of the two-dimensionally disposed photonic crystal structure to form a thinned photonic crystal support;

coating and curing a polymer on the substrate where the thinned photonic crystal support is formed;

removing the substrate to provide the two-dimensionally disposed photonic crystal structure buried in the polymer; and

removing the thinned photonic crystal support through wet etching;

wherein the two-dimensionally disposed photonic crystal structure is two-dimensionally disposed in a matrix on a disposition plane without defects;

wherein the photonic crystal laser comprises:

a flexible substrate disposed to support the two-dimensionally disposed photonic crystal structure and to cover at least a side surface of the two-dimensionally disposed photonic crystal structure;

wherein the flexible substrate comprises a through-hole formed at a lower portion of the two-dimensionally disposed photonic crystal structure and a diameter of the through-hole is smaller than a diameter of the two-dimensionally disposed photonic crystal structure;

wherein the two-dimensionally disposed photonic crystal structure oscillates in a Γ-point band-edge mode;

wherein the photonic crystal laser is attached to a measurement target;

wherein an arrangement period of the two-dimensionally disposed photonic crystal structure is between 550 and 700 nm;

wherein a laser gain medium of the two-dimensionally disposed photonic crystal structure is InGaAsP spontaneously emitted at an infrared region from 1350 nm to 1380 nm;

wherein the two-dimensionally disposed photonic crystal structure includes an InGaAsP lower cladding layer, a quantum well InGaAsP active layer, and an InGaAsP upper cladding layer that are sequentially stacked;

wherein the through-hole is an empty space; and

wherein the through-hole is formed by selectively etching a photonic crystal support.

2. The method as set forth in claim 1 , wherein the substrate is InP,

the etch-stop layer is InGaAs,

the buffer layer is InP, and

the photonic crystal active layer includes InGaAsP.

3. The method as set forth in claim 1 , wherein the polymer includes at least one of polydimethylsiloxane (PDMS), polyimide or polyethylene terephthalate (PET).

4. The method as set forth in claim 1 , wherein the dry etching is chemically assisted ion beam etching performed by accelerating argon ions under a chlorine gas atmosphere.

5. A strain measuring device comprising:

a photonic crystal laser buried in a flexible substrate;

a pump beam source configured to provide a pump beam to the photonic crystal laser and to oscillate the photonic crystal laser;

a wavelength detector configured to detect a laser wavelength varying depending on an external pressure applied to the photonic crystal laser; and

a processor configured to calculate the degree of transformation of the photonic crystal laser using the laser wavelength,

wherein the photonic crystal laser comprises:

a disk-shaped photonic crystal structure two-dimensionally disposed in a matrix on a disposition plane without defects; and

a flexible substrate disposed to support the photonic crystal structure and to cover at least a side surface of the photonic crystal structure,

wherein the flexible substrate comprises a through-hole formed at a lower portion of the disk-shaped photonic crystal structure and a diameter of the through-hole is smaller than a diameter of the disk-shaped photonic crystal structure,

wherein the photonic crystal structure oscillates in a Γ-point band-edge mode,

wherein the photonic crystal laser is attached to a measurement target,

wherein an arrangement period of the photonic crystal structure is between 550 and 700 nm,

wherein a laser gain medium of the photonic crystal structure is InGaAsP spontaneously emitted at an infrared region from 1350 nm to 1380 nm,

wherein the photonic crystal structure includes an InGaAsP lower cladding layer, a quantum well InGaAsP active layer, and an InGaAsP upper cladding layer that are sequentially stacked,

wherein the through-hole is an empty space,

wherein the through-hole is formed by selectively etching a photonic crystal support,

wherein the pump beam source has a power of a threshold value or greater to oscillate the photonic crystal laser,

further comprising:

a dichromatic mirror configured to receive the pump beam emitted from the pump beam source and transmit a received pump beam to the photonic crystal laser and configured to receive a laser beam emitted from the photonic crystal laser and transmit a received laser beam to the wavelength detector;

a parallel beam lens disposed between the pump beam source and the dichromatic mirror; and

an object lens disposed between the dichromatic mirror and the photonic crystal laser to focus the pump beam onto the photonic crystal laser.

6. The strain measuring device as set forth in claim 5 , further comprising at least one of:

an illumination light source configured to output an illumination light;

a beam coupler disposed between the dichromatic mirror and the object lens to receive and provide the illumination light to the photonic crystal laser;

a reflection mirror disposed between the dichromatic mirror and the spectrometer to change a beam path;

a beam splitter disposed between the reflection mirror and the spectrometer to split a beam; and

a camera configured to pick up an image using a beam split from the beam splitter.

7. The strain measuring device as set forth in claim 5 , wherein the flexible substrate includes at least one of polydimethylsiloxane (PDMS), polyimide or polyethylene terephthalate (PET).

8. The strain measuring device as set forth in claim 5 , wherein an output of the pump beam is greater than or equal to 600 microwatts.