Acoustic wave device
An acoustic wave device includes: a Y-cut X-propagation lithium tantalate substrate having a cut angle of 20° or more and 48° or less; and a grating electrode that is composed of one or more metal films laminated on the substrate, and excites an acoustic wave, wherein when a density of each metal film in the one or more metal films is represented by ρi, a Poisson's ratio of each metal film is represented by Pi, a film thickness of each metal film is represented by hi, a density of Cu is represented by ρ 0 , a Poisson's ratio of Cu is represented by P 0 and a pitch is represented by λ, a total value of “(hi/λ)×(ρi/ρ 0 )×(Pi/P 0 )” for each metal film with respect to the one or more metal films is more than 0.08.
1. An acoustic wave device comprising:
a Y-cut X-propagation lithium tantalate substrate having a cut angle of 20° or more and 48° or less;
a pair of interdigital electrodes that is provided on the substrate, each of the pair of interdigital electrodes includes a plurality of electrode fingers and a bus bar to which the plurality of electrode fingers are connected; and
a grating electrode that is formed from the plurality of electrode fingers of the pair of interdigital electrodes and is composed of one or more metal films laminated on the substrate, and excites an acoustic wave, wherein when a density of each metal film in the one or more metal films is represented by ρi, a Poisson's ratio of each metal film is represented by Pi, a film thickness of each metal film is represented by hi, a density of Cu is represented by ρ 0 , a Poisson's ratio of Cu is represented by P 0 and a pitch is represented by λ, a total value of “(hi/λ)×(ρi/ρ 0 )×(Pi/P 0 )” for each metal film with respect to the one or more metal films is more than 0.08,
wherein
an overlap region in which the plurality of electrode fingers of one of the pair of interdigital electrodes and the plurality of electrode fingers of another of the pair of interdigital electrodes intersect includes a central region provided in the center of the overlap region in an extending direction of the plurality of electrode fingers, and an edge region provided on an edge of the overlap region in the extending direction of the plurality of electrode fingers,
an acoustic velocity of the acoustic wave in the edge region is slower than that of the acoustic wave in the central region, and
an acoustic velocity of a gap region provided between the edge region and the bus bar and outside the overlap region is faster than that of the acoustic wave in the central region.
2. The acoustic wave device as claimed in claim 1 , wherein
the one or more metal films includes a metal film composed primarily of at least one of Cu, W, Ru, Mo, Ta and Pt.
3. The acoustic wave device as claimed in claim 1 , wherein
the total value is 0.09 or more.
4. The acoustic wave device as claimed in claim 1 , wherein
the acoustic wave is a SH (Shear Horizontal) wave.
5. The acoustic wave device as claimed in claim 1 , further comprising:
a dielectric film that is formed on the substrate and covers the grating electrode.
6. The acoustic wave device as claimed in claim 1 , wherein
a width of each of the plurality of electrode fingers in the edge region in a propagation direction of the acoustic wave is wider than that of each of the plurality of electrode fingers in the central region and the gap region in the propagation direction of the acoustic wave.
7. The acoustic wave device as claimed in claim 1 , further comprising:
a filter including the grating electrode.
8. The acoustic wave device as claimed in claim 7 , further comprising:
a duplexer including the filter.
9. An acoustic wave device comprising:
a Y-cut X-propagation lithium tantalate substrate having a cut angle of 20° or more and 48° or less;
a pair of interdigital electrodes that is provided on the substrate, each of the pair of interdigital electrodes includes a plurality of electrode fingers and a bus bar to which the plurality of electrode fingers are connected; and
a grating electrode that is formed from the plurality of electrode fingers of the pair of interdigital electrodes, excites an acoustic wave, and is composed primarily of Cu or Mo, wherein when a film thickness of the grating electrode is represented by h, and a pitch between grating electrodes is represented by λ, a h/λ a is more than 0.08,
wherein
an overlap region in which the plurality of electrode fingers of one of the pair of interdigital electrodes and the plurality of electrode fingers of another of the pair of interdigital electrodes intersect includes a central region provided in the center of the overlap region in an extending direction of the plurality of electrode fingers, and an edge region provided on an edge of the overlap region in the extending direction of the plurality of electrode fingers,
an acoustic velocity of the acoustic wave in the edge region is slower than that of the acoustic wave in the central region, and
an acoustic velocity of a gap region provided between the edge region and the bus bar and outside the overlap region is faster than that of the acoustic wave in the central region.
10. An acoustic wave device comprising:
a Y-cut X-propagation lithium tantalate substrate having a cut angle of 20° or more and 48° or less;
a pair of interdigital electrodes that is provided on the substrate, each of the pair of interdigital electrodes includes a plurality of electrode fingers and a bus bar to which the plurality of electrode fingers are connected; and
a grating electrode that is formed from the plurality of electrode fingers of the pair of interdigital electrodes, excites an acoustic wave, and is composed primarily of W, wherein when a film thickness of the grating electrode is represented by h, and a pitch between grating electrodes is represented by λ, a h/λ is more than 0.05,
wherein
an overlap region in which the plurality of electrode fingers of one of the pair of interdigital electrodes and the plurality of electrode fingers of another of the pair of interdigital electrodes intersect includes a central region provided in the center of the overlap region in an extending direction of the plurality of electrode fingers, and an edge region provided on an edge of the overlap region in the extending direction of the plurality of electrode fingers,
an acoustic velocity of the acoustic wave in the edge region is slower than that of the acoustic wave in the central region, and
an acoustic velocity of a gap region provided between the edge region and the bus bar and outside the overlap region is faster than that of the acoustic wave in the central region.
11. An acoustic wave device comprising:
a Y-cut X-propagation lithium tantalate substrate having a cut angle of 20° or more and 48° or less; and
a grating electrode that is formed on the substrate, excites an acoustic wave, and is composed primarily of Ru, wherein when a film thickness of the grating electrode is represented by h, and a pitch between grating electrodes is represented by λ, a h/λ is more than 0.07.
12. An acoustic wave device, comprising:
a Y-cut X-propagation lithium tantalate substrate having a cut angle of 20° or more and 48° or less;
a pair of interdigital electrodes that is provided on the substrate, each of the pair of interdigital electrodes includes a plurality of electrode fingers and a bus bar to which the plurality of electrode fingers are connected; and
a grating electrode that is formed from the plurality of electrode fingers of the pair of interdigital electrodes and is composed of one or more metal films laminated on the substrate, and excites an acoustic wave, wherein when a density of each metal film in the one or more metal films is represented by ρi, a Poisson's ratio of each metal film is represented by Pi, a film thickness of each metal film is represented by hi, a density of Cu is represented by ρ 0 , a Poisson's ratio of Cu is represented by P 0 and a pitch is represented by λ, a total value of “(hi/λ)×(ρi/ρ 0 )×(Pi/P 0 )” for each metal film with respect to the one or more metal films is more than 0.08,
wherein
an overlap region in which the plurality of electrode fingers of one of the pair of interdigital electrodes and the plurality of electrode fingers of another of the pair of interdigital electrodes intersect includes a central region provided in the center of the overlap region in an extending direction of the plurality of electrode fingers, and an edge region provided on an edge of the overlap region in the extending direction of the plurality of electrode fingers, and
an additional film is formed on the grating electrode in the edge region, and no additional film is formed on the plurality of electrode fingers in the central region and in a gap region provided between the edge region and the bus bar and outside the overlap region.
13. An acoustic wave device, comprising:
a Y-cut X-propagation lithium tantalate substrate having a cut angle of 20° or more and 48° or less; and
a grating electrode that is composed of one or more metal films laminated on the substrate, and excites an acoustic wave, wherein when a density of each metal film in the one or more metal films is represented by ρi, a Poisson's ratio of each metal film is represented by Pi, a film thickness of each metal film is represented by hi, a density of Cu is represented by ρ 0 , a Poisson's ratio of Cu is represented by P 0 and a pitch is represented by λ, a total value of “(hi/λ)×(ρi/ρ 0 )×(Pi/P 0 )” for each metal film with respect to the one or more metal films is more than 0.08,
wherein
a region on which the grating electrode is provided includes a central region provided in the center of the grating electrode in an extending direction of the grating electrode, and an edge region provided on an edge of the grating electrode in the extending direction of the grating electrode, and
an additional film is formed on the substrate between grating electrodes in the edge region, and no additional film is formed on the substrate between grating electrodes in the central region.