Dual-sided die packages

1. A semiconductor device assembly apparatus comprising:

a die comprising a first side and an opposite second side, the first side comprising a first type of system level contact points and the second side comprising a second type of system level contact points, wherein the first type of system level contact points comprise logic input/output contact points, wherein the second type of system level contact points comprises power contact points, and wherein power is routed from the second side of the die to the first side of the die by a plurality of through silicon vias in the die; and

a package substrate coupled to one of the first side of the die and the second side of the die.

2. A semiconductor device assembly apparatus comprising:

a die comprising a first side and an opposite second side, the first side comprising a first type of system level contact points and the second side comprising a second type of system level contact points, wherein the first type of system level contact points comprise logic input/output contact points, wherein the second type of system level contact points comprises power contact points, and wherein power is routed from the second side of the die to the first side of the die by a plurality of through silicon vias in the die;

a package substrate coupled to one of the first side of the die and the second side of the die; and

a heat exchanger coupled to one of the first side of the die and the second side of the die, wherein the package substrate and the heat exchanger are coupled on the same side of the die.

3. A semiconductor device assembly apparatus comprising:

a die comprising a first side and an opposite second side, the first side comprising a first type of system level contact points and the second side comprising a second type of system level contact points, wherein the first type of system level contact points comprise logic input/output contact points, wherein the second type of system level contact points comprises power contact points, and wherein power is routed from the second side of the die to the first side of the die by a plurality of through silicon vias in the die;

a package substrate coupled to one of the first side of the die and the second side of the die; and

a heat exchanger coupled to one of the first side of the die and the second side of the die, wherein the package substrate and the heat exchanger are coupled on opposite sides of the die.

4. The apparatus of claim 1 , wherein the package substrate is coupled to the second side of the die and ones of the logic input/output contact points are coupled to the package substrate through an interposer.

5. The apparatus of claim 1 , wherein the package substrate is coupled to the second side of the die and ones of the logic input/output contact points are coupled to the package substrate through a cable.

6. The apparatus of claim 5 , wherein the ones of the logic input/output contact points comprise a first plurality of logic input/output contact points, the apparatus comprising a second plurality of logic input/output contact points disposed on the second side of the die.

7. The apparatus of claim 6 , wherein signals associated with the first plurality of logic input/output contact points are faster than signals associated with the second plurality of logic input/output contact points.

8. The apparatus of claim 1 , further comprising a system board, wherein the package substrate is coupled to the system board.

9. A semiconductor device assembly apparatus comprising:

a die comprising a first side and an opposite second side, the first side comprising a first type of system level contact points and the second side comprising a second type of system level contact points, wherein the first type of system level contact points comprise logic input/output contact points, wherein the second type of system level contact points comprises power contact points, and wherein power is routed from the second side of the die to the first side of the die by a plurality of through silicon vias in the die;

a package substrate coupled to one of the first side of the die and the second side of the die; and

a heat exchanger coupled to one of the first side of the die and the second side of the die, wherein the package substrate has an opening and one of the package substrate and the heat exchanger is disposed in the opening.

10. A semiconductor device assembly apparatus comprising:

a die comprising a first side and a second side, the first side comprising a plurality of system level logic contact points and the second side comprising a second plurality of system level power contact points comprising a function different than the first plurality of system level contact points, wherein the first type of system level contact points comprise logic input/output contact points, wherein the second type of system level contact points comprises power contact points, and wherein power is routed from the second side of the die to the first side of the die by a plurality of through silicon vias in the die.

11. The apparatus of claim 10 , further comprising a package substrate coupled to one of the first side of the die and the second side of the die, wherein when the package substrate is coupled to the second side of the die, the plurality of logic contact points are coupled to the package substrate through one of an interposer and a cable.

12. The apparatus of claim 11 , wherein the package substrate is coupled to the second side of the die and the logic contact points comprise a first plurality of logic contact points, the apparatus further comprising a second plurality of logic input/output contact points disposed on the second side of the die.

13. The apparatus of claim 11 , further comprising a system board, wherein the package substrate is coupled to the system board.

14. The apparatus of claim 13 , further comprising a heat exchanger coupled to one of the first side of the die and the second side of the die, wherein the system board has an opening and one of the package substrate and the heat exchanger is disposed in the opening.

15. A method of forming an assembly apparatus comprising:

coupling one of a first type of system level contact points on a first side of a die and a second type of system level contact points on a second side of the die to a package substrate, wherein the first type of system level contact points comprise logic input/output contact points, wherein the second type of system level contact points comprises power contact points, and wherein power is routed from the second side of the die to the first side of the die by a plurality of through silicon vias in the die; and

coupling one of the first type of system level contact points and the second type of system level contact points to a heat exchanger and coupling the package substrate to a system board, wherein the package substrate and the heat exchanger are coupled on opposite sides of the die.

16. A method of forming an assembly apparatus comprising:

coupling one of a first type of system level contact points on a first side of a die and a second type of system level contact points on a second side of the die to a package substrate, wherein the first type of system level contact points comprise logic input/output contact points, wherein the second type of system level contact points comprises power contact points, and wherein power is routed from the second side of the die to the first side of the die by a plurality of through silicon vias in the die;

coupling the package to a system board; and

coupling one of the first type of system level contact points and the second type of system level contact points to a heat exchanger, wherein the system board has an opening and one of the package substrate and the heat exchanger is disposed in the opening.