Organic light emitting diode display
An organic light emitting diode display including: a substrate; an organic light emitting diode on the substrate; a capping layer on the organic light emitting diode and including a high refractive layer including an inorganic material having a refractive index that is equal to or greater than about 1.7 and equal to or less than about 6.0; and a thin film encapsulation layer covering the capping layer and the organic light emitting diode, the inorganic material including at least one selected from the group consisting of CuI, thallium iodide (TlI), BaS, Cu 2 O, CuO, BiI, WO 3 , TiO 2 , AgI, CdI 2 , HgI 2 , SnI 2 , PbI 2 , BiI 3 , ZnI 2 , MoO 3 , Ag 2 O, CdO, CoO, Pr 2 O 3 , SnS, PbS, CdS, CaS, ZnS, ZnTe, PbTe, CdTe, SnSe, PbSe, CdSe, AlAs, GaAs, InAs, GaP, InP, AlP, AlSb, GaSb, and InSb.
1. An organic light emitting diode display comprising:
a substrate;
an organic light emitting diode on the substrate;
a capping layer on the organic light emitting diode and including a high refractive layer comprising an inorganic material having a refractive index that is equal to or greater than about 1.7 and equal to or less than about 6.0; and
a thin film encapsulation layer covering the capping layer and the organic light emitting diode, and
wherein the inorganic material comprises at least one selected from the group consisting of CuI, thallium iodide (TlI), BaS, CuO, BiI, WO 3 , AgI, CdI 2 , HgI 2 , SnI 2 , PbI 2 , BiI 3 , ZnI 2 , MoO 3 , Ag 2 O, CdO, CoO, Pr 2 O 3 , SnS, CdS, CaS, ZnTe, CdTe, SnSe, CdSe, AlAs, GaAs, InAs, GaP, InP, AlP, AlSb, GaSb, and InSb, and
wherein the capping layer further comprises a low refraction layer comprising an inorganic material with a refractive index that is equal to or greater than about 1.0 and equal to or less than about 1.7.
2. The organic light emitting diode display of claim 1 , wherein the low refraction layer is between the high refractive layer and the organic light emitting diode.
3. The organic light emitting diode display of claim 2 , wherein the low refraction layer comprises an inorganic material that includes a halogen compound.
4. The organic light emitting diode display of claim 3 , wherein the low refraction layer comprises at least one selected from the group consisting of MgF 2 , LiF, AlF 3 , and NaF.
5. The organic light emitting diode display of claim 1 , wherein the low refraction layer comprises at least one low refraction layer, and the high refractive layer comprises at least one high refractive layer, and the capping layer has a structure in which the low refraction layer and the high refractive layer are alternately stacked.
6. The organic light emitting diode display of claim 1 , wherein:
the organic light emitting diode comprises a first electrode and a second electrode facing each other, and a light-emitting layer between the first electrode and the second electrode; and
the capping layer is directly on the second electrode.
7. The organic light emitting diode display of claim 6 , wherein the first electrode comprises a reflective layer.
8. The organic light emitting diode display of claim 7 , wherein the thin film encapsulation layer covers a lateral surface of the capping layer.
9. The organic light emitting diode display of claim 8 , wherein the light-emitting layer comprises a red light-emitting layer, a green light-emitting layer, a blue light-emitting layer, and an auxiliary layer that is below the blue light-emitting layer.
10. The organic light emitting diode display of claim 9 , further comprising a red resonant auxiliary layer below the red light-emitting layer and a green resonant auxiliary layer below the green light-emitting layer.
11. The organic light emitting diode display of claim 9 , wherein the auxiliary layer comprises a compound represented by Chemical Formula 1:
wherein, in Chemical Formula 1, A1, A2, and A3 are each an alkyl group, an aryl group, carbazole, dibenzothiophene, dibenzofuran (DBF), and biphenyl, and a, b, and c are each positive numbers of zero to four.
12. The organic light emitting diode display of claim 9 , wherein the auxiliary layer comprises a compound represented by Chemical Formula 2:
wherein, in Chemical Formula 2, a is 0 to 3, b and c are respectively 0 to 3, X is selected from O, N, or S, and each X is the same as the other or different than the other.
13. The organic light emitting diode display of claim 1 , wherein the low refraction layer has a thickness of about 100 angstroms to about 400 angstroms, and the high refractive layer has a thickness of about 400 angstroms to about 800 angstroms.
14. The organic light emitting diode display of claim 4 , wherein the low refraction layer comprises at least one selected from the group consisting of LiF, AlF 3 , and NaF.
15. The organic light emitting diode display of claim 1 , wherein:
the capping layer comprises a top layer directly below the thin film encapsulation layer, the thin film encapsulation layer comprises a base layer directly on the capping layer; and
the top layer and the base layer have different refractive indexes from each other.
16. The organic light emitting diode display of claim 15 , wherein:
the thin film encapsulation layer comprises a first encapsulation layer on the base layer, a second encapsulation layer on the first encapsulation layer, and a third encapsulation layer on the second encapsulation layer; and
the first encapsulation layer is an inorganic layer; the second encapsulation layer is an organic layer; and the third encapsulation layer is an inorganic layer.
17. The organic light emitting diode display of claim 16 , wherein the base layer comprises at least one selected from the group consisting of LiF, SiOx, SiC, MgF 2 , AlF 3 , and NaF.
18. The organic light emitting diode display of claim 17 , wherein the first encapsulation layer comprises at least one selected from the group consisting of SiON, TiO 2 , and SiNx.
19. The organic light emitting diode display of claim 18 , wherein the third encapsulation layer comprises at least one selected from the group consisting of SiON, SiNx, and TiO 2 .