Method for manufacturing glass cliche using laser etching and apparatus for laser irradiation therefor
A method for manufacturing a glass cliché using laser etching includes a dipping step for dipping a glass cliché, which will be etched, into an etching solution, a patterning step for irradiating laser to the glass cliché dipped in the etching solution to form a pattern therein, and a washing step for washing the patterned glass cliché. This method allows making a cliché with a high aspect ratio and fine line widths in comparison to a conventional cliché manufacturing method using photoresist for etching, and also ensures more efficient energy consumption and higher etching efficiency rather than an etching method using laser only.
1. An apparatus for laser irradiation, which is used for laser etching to form a pattern on a glass cliché dipped in an etching solution by irradiating laser thereto, the apparatus comprising:
an irradiating laser beam produced by a movable excimer laser source that is movable in a vertical direction with respect to a cliché surface so that a distance between the movable excimer laser source and the cliché surface can be controlled such that a focus of the irradiating laser beam can be formed at the cliché surface;
a focusing lens, the position of which between the laser source and the cliché surface is controlled according to an etched depth as the etching progresses to maintain a focus of the laser beam on the cliché surface at the etched depth;
a shadow mask comprising a laser transmission pattern identical to the pattern to be formed on the glass cliché, the pattern forming a plurality of laser irradiation areas on the glass cliché when the irradiating laser beam is transmitted through the pattern of the shadow mask;
an input unit comprising an electronic circuit configured for receiving shape information of the pattern to be formed;
a calculation unit comprising an electronic circuit configured for calculating area information of a laser irradiation surface corresponding to the shape information; and
a controller configured for controlling the movable excimer laser source.
2. The apparatus for laser irradiation according to claim 1 , wherein the controller is configured to control the movable excimer laser source according to an irradiation time based on the calculated area information.
3. The apparatus for laser irradiation according to claim 1 , wherein the movable excimer laser is a KrF laser or an ArF laser.