Approach to preventing atomic diffusion and preserving electrical conduction using two dimensional crystals and selective atomic layer deposition
A method of restricting diffusion of miscible materials across a barrier, including, forming a 2-dimensional material on a substrate surface, wherein the 2-dimensional material includes one or more defects through which a portion of the substrate surface is exposed, forming a plug selectively on the exposed substrate surface, and forming a cover layer on the plug and 2-dimensional material, wherein the cover layer material is miscible in the substrate material.
1. A method of restricting diffusion of miscible materials across a barrier, comprising:
forming a plug selectively on each portion of a substrate surface exposed through one or more defects in a 2-dimensional material on the substrate surface; and
forming a solid cover layer on the plug and 2-dimensional material, wherein at least a component of the solid cover layer material is miscible in the substrate material.
2. The method of claim 1 , wherein the 2-dimensional material has a thickness of less than about 2 nm, where the thickness allows electron tunneling through the 2-dimensional material.
3. The method of claim 1 , wherein the 2-dimensional material has a thickness of about 1 monolayer to about 4 monolayers.
4. The method of claim 1 , wherein the plug is selectively formed by atomic layer deposition or plasma enhance atomic layer deposition.
5. The method of claim 4 , wherein the plug is a metal, an insulator, or a semiconductor.
6. The method of claim 5 , wherein the substrate is an insulator material, a conductive material, a semiconductor material, or a combination thereof, and each of the plugs is a different material than the substrate.
7. The method of claim 6 , wherein each of the plugs is thicker than the 2-dimensional material.
8. The method of claim 6 , wherein the 2-dimensional material is graphene, hexagonal boron nitride, or hexagonal molybdenum sulfide.
9. The method of claim 6 , wherein each of the plugs is made of aluminum oxide, hafnium oxide, or zirconium oxide.
10. A method of restricting diffusion of miscible materials across a barrier, comprising:
forming a plug selectively on each portion of a substrate surface exposed through one or more defects in a 2-dimensional material on the substrate surface, wherein the 2-dimensional material is graphene, hexagonal boron nitride, or hexagonal molybdenum sulfide; and
forming a solid cover layer on the plug and 2-dimensional material, wherein at least a component of the solid cover layer material is miscible in the substrate material.
11. The method of claim 10 , further comprising electrically connecting a current source to the cover layer and the substrate, and passing a current across the 2-dimensional material.
12. The method of claim 11 , wherein the 2-dimensional material has a thickness of about 1 monolayer to about 4 monolayers.
13. The method of claim 12 , wherein each of the plugs is selectively formed by thermal atomic layer deposition, and wherein the plug is aluminum oxide, hafnium oxide, or zirconium oxide.
14. The method of claim 13 , wherein each of the plugs is a different solid material than the substrate.
15. The method of claim 14 , wherein the 2-dimensional material forms a diffusion barrier between the cover layer and the substrate.
16. A 2-dimensional diffusion barrier between two miscible materials, comprising:
a 2-dimensional material on a substrate surface, wherein the 2-dimensional material includes one or more defects through which a portion of the substrate surface is exposed;
a plug on each portion of the substrate surface exposed through one or more defects, wherein the plug is aluminum oxide, hafnium oxide, or zirconium oxide.
17. The 2-dimensional diffusion barrier of claim 16 , wherein the 2-dimensional material has a thickness of less than about 2 nm, where the thickness allows electron tunneling through the 2-dimensional material.
18. The 2-dimensional diffusion barrier of claim 17 , wherein the 2-dimensional material is graphene, hexagonal boron nitride, or hexagonal molybdenum sulfide.
19. The 2-dimensional diffusion barrier of claim 18 , further comprising a solid cover layer on the 2-dimensional material, wherein at least a component of the cover layer material is miscible in the substrate material, and wherein the 2-dimensional material forms a diffusion barrier between the cover layer and the substrate.
20. The 2-dimensional diffusion barrier of claim 19 , wherein the substrate is a semiconductor, and the 2-dimensional material covers an area of the substrate in the range of about 17,000 mm 2 to about 32,000 mm 2 .