Integrated circuit with dielectric waveguide connector using photonic bandgap structure
An encapsulated integrated circuit package is provided that includes an integrated circuit (IC) die. A radio frequency (RF) circuit on the IC die is operable to send and/or receive an RF signal having a selected frequency. Encapsulation material encapsulates the IC die. A photonic waveguide couples to the RF circuit and extends to an external surface of the encapsulated IC. The photonic waveguide may be formed by a photonic bandgap structure within the encapsulation material. A socket may be included with the encapsulated package that is coupled to an end of the photonic waveguide opposite the RF circuit.
1. A device, comprising:
an integrated circuit including a radio frequency (RF) circuit;
a photonic waveguide coupled to the RF circuit, the photonic waveguide including a photonic structure that is: a photonic bandgap structure having a stop band; or a photonic resonant structure having a pass band; and
encapsulation material encapsulating the integrated circuit and the photonic waveguide, the photonic waveguide extending to a surface of the encapsulation material.
2. The device of claim 1 , further comprising a socket coupled to an end of the photonic waveguide opposite the RF circuit.
3. The device of claim 2 , wherein the socket is adapted to mate with a separate waveguide connector.
4. The device of claim 2 , wherein the socket is recessed into the encapsulation material.
5. The device of claim 2 , wherein the socket is positioned at the surface of the encapsulation material.
6. The device of claim 5 , wherein the surface is a top surface of the encapsulation material.
7. The device of claim 5 , wherein the surface is a side surface of the encapsulation material.
8. The device of claim 1 , further comprising a leadframe with a die attach pad, in which a portion of the photonic structure is between the integrated circuit and the die attach pad.
9. The device of claim 1 , wherein the photonic bandgap structure includes a matrix of periodically spaced nodes within the encapsulation material, the encapsulation material has a first intrinsic property, and the nodes have a second intrinsic property that is different from the first intrinsic property.
10. The device of claim 1 , wherein the photonic structure includes particles diffused within the encapsulation material, the encapsulation material has a first intrinsic property, and the particles have a second intrinsic property that is different from the first intrinsic property.
11. The device of claim 1 , further comprising an expanded launch structure coupled to the RF circuit.
12. A method, comprising:
attaching an integrated circuit (IC) die to a leadframe, the IC die including a radio frequency (RF) circuit to send and/or receive an RF signal having a frequency; and
encapsulating the IC die to form an encapsulated package including a photonic structure within an encapsulation material, the photonic structure forming a photonic waveguide that couples to the RF circuit and extends to an external surface of the encapsulated package, the photonic structure being: a photonic bandgap structure having a stop band that includes the frequency; or a photonic resonant structure having a pass band that includes the frequency.
13. The method of claim 12 , wherein forming the photonic structure comprises forming a matrix of periodically spaced nodes within the encapsulation material, the encapsulation material has a first intrinsic property, and the nodes have a second intrinsic property that is different from the first intrinsic property.
14. The method of claim 13 , wherein forming the photonic bandgap structure comprises:
forming a first matrix of periodically spaced nodes within the encapsulation material having a first lattice constant; and
forming a second matrix of periodically spaced nodes within the encapsulation material having a second lattice constant.
15. The method of claim 12 , wherein forming the photonic structure comprises diffusing particles within the encapsulation material, the encapsulation material has a first intrinsic property, and the particles have a second intrinsic property that is different from the first intrinsic property.
16. A device, comprising:
an integrated circuit including a radio frequency (RF) circuit;
a photonic bandgap (PBG) waveguide coupled to the RF circuit, the PBG waveguide including a multilayer PBG structure, the multilayer PBG structure including at least first and second layers in which: the first layer has a first photonic bandgap with a first frequency range; and the second layer has a second photonic bandgap with a second frequency range; and
encapsulation material encapsulating the integrated circuit and the PBG waveguide, the PBG waveguide extending to a surface of the encapsulation material.
17. The device of claim 16 , wherein the first photonic bandgap includes a frequency of an RF signal processable by the RF circuit.
18. The device of claim 16 , wherein the first layer includes a matrix of periodically spaced first nodes within the encapsulation material, the second layer includes a matrix of periodically spaced second nodes within the encapsulation material, the encapsulation material has a first intrinsic property, and an intrinsic property of the first nodes is different from the first intrinsic property and different from an intrinsic property of the second nodes.
19. The device of claim 16 , further comprising a socket coupled to an end of the PBG waveguide opposite the RF circuit.
20. The device of claim 16 , wherein the surface is a top surface of the encapsulation material.
21. The device of claim 16 , wherein the surface is a side surface of the encapsulation material.