Electronic device
An electronic device includes: an anode and a cathode facing each other; a quantum dot emission layer disposed between the anode and the cathode and including a plurality of quantum dots; and a light emitting source, wherein the quantum dot emission layer is configured to receive electrical energy from the anode and the cathode and to emit light having a first wavelength, wherein the quantum dot emission layer and the light emitting source are configured so that the light emitting source provides the quantum emission layer with light having a second wavelength, and the plurality of quantum dots are excited by the light having the second wavelength and emit light having a third wavelength, wherein the anode, the cathode, or a combination thereof is a light transmitting electrode, and the light of the first wavelength and the light of the third wavelength are emitted through the light transmitting electrode.
1. An electronic device comprising:
an anode and a cathode facing each other;
a quantum dot emission layer disposed between the anode and the cathode and comprising a plurality of quantum dots; and
an excitation light emitting source,
wherein the quantum dot emission layer is configured to receive electrical energy from the anode and the cathode and to emit light having a first wavelength,
wherein the quantum dot emission layer and the excitation light emitting source are configured so that the excitation light emitting source provides the quantum dot emission layer with light having a second wavelength of about 300 nanometers to about 490 nanometers, and the plurality of quantum dots in the quantum dot emission layer are excited by the light of the second wavelength and emit light having a third wavelength which is greater than the second wavelength,
wherein the anode, the cathode, or a combination thereof is a light transmitting electrode,
wherein the light having the first wavelength and the light having the third wavelength are emitted through the light transmitting electrode,
wherein the excitation light emitting source comprises a light emitting transistor, and
the light emitting transistor comprises a gate electrode, a channel overlapping at least a portion of the gate electrode and comprising an electroluminescence material, an insulator disposed between the gate electrode and the channel, and a source electrode and a drain electrode electrically connected with the channel.
2. The electronic device of claim 1 , wherein the electronic device further comprises a first hole injection layer, a first hole transport layer, a first electron blocking layer, or a combination thereof disposed between the anode and the quantum dot emission layer, and
the electronic device further comprises a first electron injection layer, a first electron transport layer, a first hole blocking layer, or a combination thereof disposed between the cathode and the quantum dot emission layer.
3. The electronic device of claim 1 , wherein the excitation light emitting source is configured so that the light having the second wavelength passes through the light transmitting electrode before being provided to the quantum dot emission layer.
4. The electronic device of claim 1 , wherein the gate electrode is a reflecting electrode.
5. The electronic device of claim 1 , wherein the light having the first wavelength and the light having the third wavelength pass through the cathode,
the anode comprises a first surface and a second surface opposite the first surface,
the first surface of the anode faces the quantum dot emission layer, and
the light emitting transistor is disposed on the second surface of the anode.
6. The electronic device of claim 5 , wherein the light emitting transistor is configured so that charge transport occurs in a direction perpendicular to the first surface.
7. The electronic device of claim 1 , wherein the light having the first wavelength and the light having the third wavelength pass through the cathode,
the anode comprises a first surface and a second surface opposite the first surface,
the first surface of the anode faces the quantum dot emission layer, and
the second surface of the anode faces the channel of the light emitting transistor.
8. The electronic device of claim 7 , wherein the light emitting transistor is configured so that charge transport occurs in a direction horizontal to the first surface.
9. The electronic device of claim 1 , wherein the channel comprises a hole auxiliary layer facing the source electrode, an electron auxiliary layer facing the drain electrode, and an emission layer disposed between the hole auxiliary layer and the electron auxiliary layer and comprising the electroluminescence material.
10. The electronic device of claim 9 , wherein the hole auxiliary layer comprises a second hole injection layer, a second hole transport layer, a second electron blocking layer, or a combination thereof,
the electron auxiliary layer comprises a second electron injection layer, a second electron transport layer, a second hole blocking layer, or a combination thereof.
11. A display device comprising the electronic device of claim 1 .