Semiconductor device and method of manufacturing the same

1. A semiconductor device comprising:

a lead frame comprising at least one first terminal and at least one second terminal for grounding;

a sealing resin covering the lead frame and defining an end of the semiconductor device, the sealing resin comprising a thin wall part above the at least one first terminal, the thin wall part having a height equal to a height of the at least one second terminal at the end of the semiconductor device;

an exposed part which is a part of the at least one second terminal and is exposed from the sealing resin; and

a conductive material which covers the surface of the sealing resin and contacts the at least one second terminal at the exposed part, wherein

a first notch portion is provided in the at least one second terminal at the end of the semiconductor device, and a second notch portion is provided at the thin wall part and above the at least one first terminal, and

the conductive material contacts the at least one second terminal in the first notch portion.

2. The semiconductor device according to claim 1 , wherein

the at least one first terminal and the at least one second terminal are arranged at the end of the semiconductor device, and

the at least one second terminal is higher than the at least one first terminal at the end of the semiconductor device.

3. The semiconductor device according to claim 2 , wherein

the at least one second terminal comprises:

a third terminal which is comprised by the lead frame and has the same height as the at least one first terminal; and

a conductive piece which is disposed on the surface of the third terminal.

4. The semiconductor device according to claim 2 , wherein

the lead frame comprises a die pad for mounting a semiconductor chip, and

the at least one second terminal is electrically conducted with the die pad.

5. The semiconductor device according to claim 2 , wherein

the exposed part and the thin wall part are formed so as to enclose a semiconductor chip, and

the conductive material covers the surfaces of the exposed part and the thin wall part which enclose the semiconductor chip.

6. The semiconductor device according to claim 1 , wherein

the first notch portion, the second notch portion and a third notch portion provided in a resin portion of the sealing resin between the first notch portion and the second notch portion form a peripheral notch that extends around the entire periphery of the semiconductor device in plan view.

7. The semiconductor device according to claim 6 , wherein

the at least one first terminal includes a plurality of first terminals and the at least one second terminal includes a plurality of second terminals, and

the plurality of the first terminals and the plurality of the second terminals are arranged at the end of the semiconductor device alternately.

8. The semiconductor device according to claim 1 , wherein

the first notch portion, the second notch portion and a third notch portion provided in a resin portion of the sealing resin between the first notch portion and the second notch portion form a peripheral notch that extends around the periphery of the semiconductor device in plan view.

9. The semiconductor device according to claim 8 , wherein

the at least one first terminal includes a plurality of first terminals and the at least one second terminal includes a plurality of second terminals, and

the plurality of the first terminals and the plurality of the second terminals are arranged at the end of the semiconductor device alternately.

10. The semiconductor device according to claim 1 , wherein

the first notch portion provides a thin part of the at least one second terminal, and

a height of the thin part of the at least one second terminal is higher than a height of the at least one first terminal.

11. The semiconductor device according to claim 1 , wherein

a height of the at least one second terminal in the first notch portion is higher than a height of the at least one first terminal.