Electronic device and method of fabricating the same

1. An electronic device comprising a semiconductor memory,

wherein the semiconductor memory comprises:

first column lines extending in a first direction;

sub-column lines extending in the first direction;

first row lines extending in a second direction intersecting with the first direction;

first tiles including first memory cells connected between the first column lines and the first row lines;

first contact plugs disposed between the first tiles that are adjacent to each other in the first direction, the first contact plugs being coupled to the sub-column lines;

second contact plugs disposed between the first tiles that are adjacent to each other in the second direction, the second contact plugs being coupled to the first row lines; and

a first connection structure coupled between the first column lines and the sub-column lines at predetermined locations such that, as a length of a current path on a first row line from a selected first memory cell to a corresponding second contact plug increases, a length of a current path from the selected first memory cell to a corresponding first contact plug decreases.

2. The electronic device according to claim 1 , further comprising:

a column circuit coupled to the first column lines through the first contact plugs and the sub-column lines; and

a row circuit coupled to the first row lines through the second contact plugs.

3. The electronic device according to claim 1 , wherein the first row lines, the first column lines, and the sub-column lines are successively stacked.

4. The electronic device according to claim 1 , wherein each of the first column lines is a bit line, each of the sub-column lines is a sub-bit line, and each of the first row lines is a word line.

5. The electronic device according to claim 1 , further comprising:

second column lines extending in the first direction;

second row lines extending in the second direction;

second tiles including second memory cells connected between the second column lines and the second row lines, the second tiles being disposed over the first tiles;

third contact plugs disposed between the second tiles that are adjacent to each other in the second direction, the third contact plugs being coupled to the second row lines; and

a second connection structure that couples the second column lines to the sub-column lines at predetermined locations such that, as a length of a current path on a second row line from a selected second memory cell to a corresponding third contact plug increases, a length of a current path from the selected second memory cell to a corresponding first contact plug decreases.

6. The electronic device according to claim 5 , further comprising:

a column circuit coupled to the second column lines through the first contact plugs and the sub-column lines; and

a row circuit coupled to the second row lines through the third contact plugs.

7. The electronic device according to claim 5 , wherein the first row lines, the first column lines, the sub-column lines, the second column lines, and the second row lines are successively stacked.

8. The electronic device according to claim 5 , wherein each of the first column lines is a bit line, each of the sub-column lines is a sub-bit line, each of the first row lines is a word line, each of the second column lines is a bit line, and each of the second row lines is a word line.

9. The electronic device according to claim 5 , wherein the second contact plugs and the third contact plugs are alternately arranged in the second direction without overlapping with each other in a stacking direction.

10. The electronic device according to claim 1 , further comprising:

second row lines extending in the second direction;

sub-row lines extending in the second direction;

second tiles including second memory cells connected between the sub-column lines and the second row lines, the second tiles being disposed under the first tiles;

third contact plugs disposed between the second tiles that are adjacent to each other in the second direction, the third contact plugs being coupled to the sub-row lines; and

a second connection structure coupled between the sub-row lines and the second row lines such that, as a length of a current path on a sub-column line from a selected second memory cell to a corresponding first contact plug increases, a length of a current path from the selected second memory cell to a corresponding third contact plug decreases.

11. The electronic device according to claim 10 , further comprising:

a column circuit coupled with the sub-column lines through the first contact plugs; and

a row circuit coupled with the second row lines through the third contact plugs and the sub-row lines.

12. The electronic device according to claim 10 , wherein the sub-row lines, the second row lines, the sub-column lines, the first column lines, and the first row lines are successively stacked.

13. The electronic device according to claim 10 , wherein each of the first column lines is a bit line, each of the sub-column lines is a sub-bit line, each of the first row lines is a word line, each of the sub-row lines is a sub-word line, and each of the second row lines is a word line.

14. The electronic device according to claim 10 , wherein the second contact plugs and the third contact plugs are alternately arranged in the second direction without overlapping with each other in a stacking direction.

15. The electronic device according to claim 1 , further comprising:

second row lines extending in the second direction;

second tiles including second memory cells connected between the sub-column lines and the second row lines, the second tiles being disposed over the first tiles; and

third contact plugs disposed between the second tiles that are adjacent to each other in the second direction, the third contact plugs being coupled to the second row lines.

16. An electronic device comprising a semiconductor memory, wherein the semiconductor memory comprises:

a first deck including first memory cells;

a second deck disposed over the first deck, and including second memory cells;

a first column line electrically coupled to the first memory cells;

a second column line electrically coupled to the second memory cells;

a sub-column line disposed between the first deck and the second deck and coupled to a column circuit that drives the first column line and the second column line;

a first connection structure coupled between the first column line and the sub-column line; and

a second connection structure coupled between the second column line and the sub-column line.

17. The electronic device according to claim 16 , further comprising a first row line electrically coupled to the first memory cells and driven by a row circuit.

18. The electronic device according to claim 17 , wherein the first connection structure is configured such that, as a path on the first row line from the row circuit to a selected first memory cell increases, a distance from the column circuit to a position at which the first column line is coupled to the sub-column line decreases, and, as the path on the first row line from the row circuit to the selected first memory cell decreases, the distance from the column circuit to the position at which the first column line is coupled to the sub-column line increases.

19. The electronic device according to claim 16 , further comprising a second row line electrically coupled to the second memory cells and configured to be driven by a row circuit.

20. The electronic device according to claim 19 , wherein the second connection structure is configured such that, as a path on the second row line from the row circuit to a selected second memory cell increases, a distance from the column circuit to a position at which the second column line is coupled to the sub-column line decreases, and, as the path on the second row line from the row circuit to the selected second memory cell decreases, the distance from the column circuit to the position at which the second column line is coupled to the sub-column line increases.