IP Library › Granted Patent US 10,374,024
Granted Patent B2
US 10,374,024 · App. 15/580,449 · Granted Aug 6, 2019

Flexible display panel and manufacturing method thereof

Inventor: Xing Wang (Hubei, CN)
Assignee: WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
H01L27/3265H01L27/3262H01L51/0097H01L27/1255H01L27/1288H01L29/78645H01L2227/323H01L2251/5338
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Quick Facts
Patent No.
US 10,374,024
App. No.
15/580,449
Granted
Aug 6, 2019
Kind
B2
Abstract

A flexible display panel includes a display region and a non-display region. Capacitors are added to an empty region of the non-display region. The capacitors have ability to buffer a release of electrostatic charges, thereby reducing damage to inner devices and metal wiring film layers caused by the electrostatic charges and protecting the metal wiring film layers from being damaged and destroyed by the electrostatic charges during manufacturing active thin-film transistors of the flexible display panel.

Claims (25)

1. A flexible display panel comprising:

a display region and a non-display region, wherein thin-film transistors are disposed in the display region, the thin-film transistors have a first gate electrode and a second gate electrode, the non-display region comprises metal wiring regions and an empty region located between the metal wiring regions;

a first metal plate and a second metal plate opposite to each other, disposed in the empty region, wherein the first metal plate and the first gate electrode belong to a same layer, the second metal plate and the second gate electrode belong to a same layer; and

a capacitor formed between the first metal plate and the second metal plate, wherein the first metal plate and the second metal plate have a same shape, the first gate electrode and the first metal plate have a same thickness, the second gate electrode and the second metal plate have a same thickness.

2. A flexible display panel comprising:

a display region and a non-display region, wherein thin-film transistors are disposed in the display region, the thin-film transistors have a first gate electrode and a second gate electrode, the non-display region comprises metal wiring regions and an empty region located between the metal wiring regions;

a first metal plate and a second metal plate opposite to each other, disposed in the empty region, wherein the first metal plate and the first gate electrode belong to a same layer, the second metal plate and the second gate electrode belong to a same layer, and

a capacitor formed between the first metal plate and the second metal plate.

3. The flexible display panel according to claim 2 , wherein the first metal plate and the second metal plate have a same shape.

4. The flexible display panel according to claim 2 , wherein the first metal plate and the second metal plate are shaped as a circle or a square.

5. The flexible display panel according to claim 2 , wherein the first gate electrode and the first metal plate have a same thickness and the second gate electrode and the second metal plate have a same thickness.

6. The flexible display panel according to claim 2 , wherein the non-display region comprises a flexible substrate, a buffer layer disposed on the flexible substrate, an active layer disposed on the buffer layer, a first insulating layer covering the active layer and the buffer layer, wherein the first gate electrode is disposed on the first insulating layer, the first insulating layer extends to the non-display region, and the first metal plate is disposed on the first insulating layer of the non-display region.

7. The flexible display panel according to claim 6 , further comprising a second insulating layer covering the first gate electrode, the first metal plate, and the first insulating layer, wherein the second gate electrode is disposed on the second insulating layer in the display region, and the second metal plate is disposed on the second insulating layer in the empty region of the non-display region.

8. The flexible display panel according to claim 7 , further comprising a third insulating layer covering the second gate electrode, the second metal plate, and the second insulating layer.

9. The flexible display panel according to claim 8 , further comprising a source electrode and a drain electrode, wherein the source electrode and the drain electrode penetrate the first insulating layer, the second insulating layer, and the third insulating layer, and connect to the active layer.

10. A method for manufacturing a flexible display panel, comprising:

sequentially forming a buffer layer, an active layer, a first insulating layer, and a first metal layer on a flexible substrate;

patterning the first metal layer to form a first gate electrode and a first metal plate, the first gate electrode located in a display region of the flexible display panel, the first metal plate located in an empty region of a non-display region of the flexible display panel;

forming a second insulating layer and a second metal layer on the first gate electrode, the first metal plate, and the first insulating layer,

patterning the second metal layer to form a second gate electrode and a second metal plate, the second gate electrode located in the display region of the flexible display panel, the second metal plate located in the empty region of the non-display region of the flexible display panel, the first metal plate and the second metal plate disposed opposite to each other and forming a capacitor;

forming a third insulating layer on the second gate electrode, the second metal plate, and the second insulating layer;

forming a source electrode and a drain electrode that penetrate the first insulating layer, the second insulating layer, and the third insulating layer, and connect to the active layer and

forming a flattened layer, an anode layer, a pixel definition layer, an organic light emitting layer, and a cathode layer on the third insulating layer, the anode layer penetrating the flattened layer and connecting to the drain electrode.

11. The method according to claim 10 , wherein the first gate electrode and the first metal plate belong to a same layer.

12. The method according to claim 10 , wherein the second gate electrode and the second metal plate belong to a same layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 7, 2017
From: WANG, XING
To: WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
Reel/Frame 044331/0129 →
Priority Claims (1)
CN 2017 1 0891601 · Sep 27, 2017 · national
Continuity (1)
Related Publication 20190165072A1 · May 30, 2019