Semiconductor device
View Patent ↗A high-performance and highly reliable semiconductor device is provided. The semiconductor device includes: a first oxide; a source electrode; a drain electrode; a second oxide over the first oxide, the source electrode, and the drain electrode; a gate insulating film over the second oxide; and a gate electrode over the gate insulating film. The source electrode is electrically connected to the first oxide. The drain electrode is electrically connected to the first oxide. Each of the first oxide and the second oxide includes In, an element M (M is Al, Ga, Y, or Sn), and Zn. Each of the first oxide and the second oxide includes more In atoms than element M atoms. An atomic ratio of the In, the Zn, and the element M in the first oxide is equal to or similar to an atomic ratio of the In, the Zn, and the element M in the second oxide.
1. A semiconductor device comprising:
a first oxide;
a source electrode;
a drain electrode;
a second oxide over the first oxide, the source electrode, and the drain electrode;
a gate insulating film over the second oxide; and
a gate electrode over the gate insulating film,
wherein the second oxide is in contact with a top surface of the first oxide,
wherein the source electrode is electrically connected to the first oxide,
wherein the drain electrode is electrically connected to the first oxide,
wherein each of the first oxide and the second oxide includes In, an element M, and Zn,
wherein the element M is Al, Ga, Y, or Sn,
wherein an atomic ratio of the In, the Zn, and the element M in the first oxide is equal to or similar to an atomic ratio of the In, the Zn, and the element M in the second oxide, and
wherein in each of the first oxide and the second oxide, an atomic proportion of the In is larger than an atomic proportion of the element M.
2. The semiconductor device according to claim 1 ,
wherein a difference between an electron affinity of the first oxide and an electron affinity of the second oxide is greater than or equal to 0 eV and less than or equal to 0.15 eV.
3. The semiconductor device according to claim 1 ,
wherein the second oxide is electrically connected to the source electrode.
4. The semiconductor device according to claim 1 , further comprising a third oxide between the second oxide and the gate insulating film,
wherein the third oxide includes In, the element M, and Zn,
wherein in the third oxide, an atomic proportion of the In is larger than an atomic proportion of the element M.
5. The semiconductor device according to claim 4 ,
wherein a difference between an electron affinity of the first oxide and an electron affinity of the second oxide is greater than or equal to 0 eV and less than or equal to 0.15 eV,
wherein an electron affinity of the third oxide is smaller than the electron affinity of the second oxide, and
wherein a difference between the electron affinity of the third oxide and the electron affinity of the second oxide is greater than or equal to 0.2 eV and less than or equal to 0.4 eV.
6. A module comprising:
the semiconductor device according to claim 1 ; and
a printed circuit board.
7. An electronic device comprising:
the module according to claim 6 ; and
a speaker or an operation key.
8. A semiconductor wafer comprising:
the semiconductor devices according to claim 1 ; and
a region for dicing.
9. A semiconductor device comprising:
a first oxide;
a second oxide over the first oxide;
a source electrode;
a drain electrode;
a third oxide over the second oxide, the source electrode, and the drain electrode;
a gate insulating film over the third oxide; and
a gate electrode over the gate insulating film,
wherein the third oxide is in contact with a top surface of the second oxide,
wherein the source electrode is electrically connected to the second oxide,
wherein the drain electrode is electrically connected to the second oxide,
wherein each of the first oxide, the second oxide, and the third oxide includes In, an element M, and Zn,
wherein the element M is Al, Ga, Y, or Sn,
wherein an atomic ratio of the In, the Zn, and the element M in the second oxide is equal to or similar to an atomic ratio of the In, the Zn, and the element M in the third oxide, and
wherein in each of the second oxide and the third oxide, an atomic proportion of the In is larger than an atomic proportion of the element M.
10. The semiconductor device according to claim 9 ,
wherein a difference between an electron affinity of the second oxide and an electron affinity of the third oxide is greater than or equal to 0 eV and less than or equal to 0.15 eV.
11. The semiconductor device according to claim 9 ,
wherein the third oxide is electrically connected to the source electrode.
12. The semiconductor device according to claim 9 , further comprising:
a fourth oxide between the third oxide and the gate insulating film;
wherein the fourth oxide includes In, the element M, and Zn, and
wherein in the fourth oxide, an atomic proportion of the element M is larger than an atomic proportion of the In.
13. The semiconductor device according to claim 12 ,
wherein a difference between an electron affinity of the second oxide and an electron affinity of the third oxide is greater than or equal to 0 eV and less than or equal to 0.15 eV,
wherein an electron affinity of the fourth oxide is smaller than the electron affinity of the third oxide, and
wherein a difference between the electron affinity of the fourth oxide and the electron affinity of the third oxide is greater than or equal to 0.2 eV and less than or equal to 0.4 eV.
14. A module comprising:
the semiconductor device according to claim 9 ; and
a printed circuit board.
15. An electronic device comprising:
the module according to claim 14 ; and
a speaker or an operation key.
16. A semiconductor wafer comprising:
the semiconductor devices according to claim 9 ; and
a region for dicing.