Chalco-phosphate-based hard radiation detectors
Methods and devices for detecting incident radiation, such as incident x-rays or gamma-rays, are provided. The methods and devices use high purity, high quality single-crystals of inorganic semiconductor compounds having the formula A 2 P 2 X 6 , where A represents Pb or Sn and X represents S or Se, as photoelectric materials.
1. A method for detecting incident radiation, the method comprising:
exposing a material comprising an inorganic compound having the formula A 2 P 2 X 6 , where A represents Pb or Sn and X represents S or Se, to incident gamma radiation, x-ray radiation, or a combination thereof, wherein the material absorbs the incident radiation and electron-hole pairs are generated in the material; and
measuring at least one of the energy or intensity of the absorbed incident radiation by detecting the generated electrons, holes, or both.
2. The method of claim 1 , wherein A represents Pb.
3. The method of claim 2 , wherein X represents Se.
4. The method of claim 3 , wherein the inorganic compound has a bandgap of at least 1.6 eV and an electrical resistivity of at least 10 10 Ω·cm at 23° C.
5. The method of claim 3 , wherein the inorganic compound has a bandgap of at least 1.7 eV and an electrical resistivity of at least 10 11 Ω·cm at 23° C.
6. The method of claim 3 , wherein the material does not contain any impurity element at a concentration of greater than 2 ppm wt., other than impurity elements that are isoelectronic with Se.
7. The method of claim 2 , wherein the inorganic compound has a bandgap of at least 1.6 eV and an electrical resistivity of at least 10 10 Ω·cm at 23° C.
8. The method of claim 2 , wherein the inorganic compound has a bandgap of at least 1.7 eV and an electrical resistivity of at least 10 11 Ω·cm at 23° C.
9. The method of claim 2 , wherein the material does not contain any impurity element at a concentration of greater than 2 ppm wt., other than impurity elements that are isoelectronic with Se.
10. The method of claim 1 , wherein X represents Se.
11. The method of claim 1 , wherein the inorganic compound has a bandgap of at least 1.6 eV and an electrical resistivity of at least 10 10 Ω·cm at 23° C.
12. The method of claim 1 , wherein the inorganic compound has a bandgap of at least 1.7 eV and an electrical resistivity of at least 10 11 Ω·cm at 23° C.
13. The method of claim 1 , wherein the material does not contain any impurity element at a concentration of greater than 2 ppm wt., other than impurity elements that are isoelectronic with the X element of the inorganic compound.
14. A device for the detection of incident radiation comprising:
a material comprising an inorganic compound having the formula A 2 P 2 X 6 , where A represents Pb or Sn and X represents S or Se;
a first electrode in electrical communication with the material;
a second electrode in electrical communication with the material, wherein
the first and second electrodes are configured to apply an electric field across the material; and
a detector configured to measure a signal generated by electron-hole pairs that are formed when the material is exposed to incident gamma radiation, x-ray radiation, or a combination thereof.
15. The device of claim 14 , wherein A represents Pb.
16. The device of claim 15 , wherein X represents Se.
17. The device of claim 16 , wherein the inorganic compound has a bandgap of at least 1.6 eV and an electrical resistivity of at least 10 10 Ω·cm at 23° C.
18. The device of claim 15 , wherein the inorganic compound has a bandgap of at least 1.6 eV and an electrical resistivity of at least 10 10 Ω·cm at 23° C.
19. The device of claim 14 , wherein X represents Se.
20. The device of claim 14 , wherein the inorganic compound has a bandgap of at least 1.6 eV and an electrical resistivity of at least 10 10 Ω·cm at 23° C.