Techniques for manipulating patterned features using ions

1. A method, comprising:

providing a cavity on a substrate;

depositing a layer comprising a layer material on the cavity; and

directing ions in an ion exposure along a first direction, and at an angle of incidence toward the substrate, the angle of incidence forming a non-zero angle with respect to a perpendicular to the substrate plane,

wherein the ion exposure reactively etches the layer material, wherein the ions impact a first sidewall of the cavity, along an entirety of the first sidewall, the first sidewall extending perpendicularly to the first direction, and

wherein the ions do not impact a second sidewall of the cavity, the second sidewall of the cavity extending along the first direction.

2. The method of claim 1 , wherein the cavity comprises a first dimension along the first direction and a second dimension along a second direction perpendicular to the first direction, and wherein the depositing the layer comprises performing a shrink of the cavity wherein the first dimension and second dimension are reduced.

3. The method of claim 1 , wherein the cavity comprises a circular shape before the ion exposure and comprises an elongated shape after the ion exposure.

4. The method of claim 1 , wherein the layer material is removed from a bottom surface of the cavity after the etching.

5. The method of claim 2 , wherein the cavity is formed within a substrate material before the ion exposure, and wherein the ion exposure comprises etching the substrate material along the first direction to form an elongated shape, wherein the elongated shape comprises a third dimension along the first direction, the third dimension being greater than the first dimension.

6. The method of claim 2 , wherein the cavity comprises a trench before the depositing the layer, wherein the first dimension is greater than the second dimension, and wherein after the depositing the layer and after the ion exposure, the trench comprises a third dimension along the second direction, the third dimension being less than the first dimension, and further comprises the first dimension along the first direction.

7. The method of claim 2 , wherein the cavity comprises a trench before the depositing the layer, wherein the first dimension is greater than the second dimension, and wherein after the depositing the layer and after the ion exposure, the trench comprises a third dimension along the second direction, the third dimension being less than the first dimension, and further comprises a fourth dimension along the first direction, the fourth dimension being greater than the first dimension.

8. The method of claim 1 , wherein a location of the cavity is shifted from a first location within the substrate before the depositing the layer to a second location within the substrate after the ion exposure.

9. The method of claim 8 , wherein after the depositing the layer and the ion exposure a dimension of the cavity is reduced along the second direction, and wherein the first dimension along the first direction is not altered.

10. The method of claim 8 , wherein after the depositing the layer and the ion exposure a dimension of the cavity is reduced along the second direction, and wherein the first dimension along the first direction is increased.

11. The method of claim 1 , wherein the ions are directed as a ribbon ion beam, the ribbon beam having an axis parallel to the second direction.

12. The method of claim 1 , wherein the cavity is formed within a substrate material before the depositing the layer, and wherein the substrate material acts as an etch stop for the ion exposure.

13. A method of processing a substrate, comprising:

providing a cavity in the substrate, the cavity having a first dimension along a first direction within a substrate plane and a second dimension along a second direction within the substrate plane, the second direction being perpendicular to the first direction;

depositing a layer comprising a layer material within the cavity; and

directing ions in an ion exposure along the first direction, and at an angle of incidence toward the substrate, the angle of incidence forming a non-zero angle with respect to a perpendicular to the substrate plane,

wherein the ion exposure reactively etches the layer material, wherein the ions impact a first sidewall of the cavity, along an entirety of the first sidewall, the first sidewall extending along the second direction,

wherein the ions do not impact a second sidewall of the cavity, the second sidewall of the cavity extending along the first direction,

and wherein the first dimension is selectively altered with respect to the second dimension.

14. The method of claim 12 , wherein the first dimension is reduced while the second dimension is not reduced.

15. The method of claim 13 , wherein the second dimension is increased.

16. A method of processing a substrate, comprising:

providing a cavity in the substrate, the cavity disposed at a first cavity location within the substrate;

depositing a layer comprising a layer material within the cavity; and

directing ions in an ion exposure along a first direction and at an angle of incidence toward the substrate, the angle of incidence forming a non-zero angle with respect to a perpendicular to the substrate plane, the ion exposure reactively etching the layer material,

wherein the ions impact a first sidewall of the cavity, along an entirety of the first sidewall, the first sidewall extending perpendicularly to the first direction,

wherein the ions do not impact a second sidewall of the cavity, the second sidewall of the cavity extending along the first direction, and

wherein the cavity is disposed at a second cavity location in the substrate after the ion exposure.

17. The method of claim 16 , wherein the cavity comprises a trench, and wherein a trench location is shifted along the first direction, and wherein the trench is selectively narrowed along the second direction.