Method for manufacturing semiconductor device
This disclosure relates to the technical field of semiconductors, and discloses a method for manufacturing semiconductor FinFET devices. The method particularly includes pre-removal of a predetermined thickness of a first region of an isolation region on sides of a fin that is not covered by a pseudo gate such that when a layer of second region of the isolation region covered by the pseudo gate is sacrificially removed during a removal of the pseudo gate, the upper surfaces of the remaining first region and the remaining second region of the isolation region are approximately leveled. By using such a method, DC and AC performances of a resulting FinFET device is improved.
1. A method for manufacturing a semiconductor device, comprising:
providing a substrate structure, wherein the substrate structure comprises:
a substrate;
a semiconductor fin on the substrate;
a dielectric layer on the semiconductor fin;
an isolation region at sides of the semiconductor fin, wherein an upper surface of the isolation region is lower than an upper surface of the semiconductor fin, wherein the isolation region comprises a first region and a second region; and
a pseudo gate covering a portion of the dielectric layer and the first region of the isolation region, wherein the second region of the isolation region is located on two sides of the pseudo gate;
removing a portion of the second region for a predetermined removal depth, so that an upper surface of the remaining second region is lower than an upper surface of the first region;
growing an epitaxial source and drain on the semiconductor fin on sides of the pseudo gate;
removing the pseudo gate and the dielectric layer below the pseudo gate to form a groove, wherein the predetermined removal depth is approximately equal to a sacrificially removed depth of the first region when removing the pseudo gate; and
forming a gate structure in the groove.
2. The method according to claim 1 , further comprising:
determining the predetermined removal depth based on computer simulation; or
adjusting the predetermined removal depth according to a process feedback.
3. The method according to claim 1 , wherein the method further comprises:
before growing the epitaxial source and drain, forming a first spacer layer at a side wall of the pseudo gate and at a side wall of a portion of the first region above the remaining second region.
4. The method according to claim 3 , wherein growing the epitaxial source and drain comprises:
removing, after the first spacer layer is formed, a portion of the semiconductor fin at two sides of the pseudo gate, so as to form recesses; and
epitaxially growing a semiconductor material in the recesses, so as to form raised active regions.
5. The method according to claim 4 , further comprising:
depositing an interlayer dielectric layer after the raised active regions are formed, wherein the interlayer dielectric layer is planarized to expose the pseudo gate.
6. The method according to claim 1 , wherein the gate structure comprises:
a gate dielectric layer at a bottom portion of the groove; and
a gate on the gate dielectric layer.
7. The method according to claim 6 , wherein the substrate structure further comprises a hard mask layer on the pseudo gate.