Device for growing monocrystalline crystal
A device for growing large-sized monocrystalline crystals, including a crucible adapted to grow crystals from a material source and with a seed crystal and including therein a seed crystal region, a growth chamber, and a material source region; a thermally insulating material disposed outside the crucible and below a heat dissipation component; and a plurality of heating components disposed outside the thermally insulating material to provide heat sources, wherein the heat dissipation component is of a heat dissipation inner diameter and a heat dissipation height which exceeds a thickness of the thermally insulating material.
1. A device for growing monocrystalline crystals, comprising:
a crucible adapted to grow crystals from a material source and with a seed crystal and including therein a seed crystal region, a growth chamber, and a material source region;
a thermally insulating material disposed outside the crucible;
a heat dissipation component disposed on top of the crucible; and
a plurality of heating components disposed outside the thermally insulating material to provide heat sources;
wherein the heat dissipation component is a hollow-cored cylinder surrounded by the thermally insulating material and directly contacted with the crucible at the bottom thereof so as to expose at least a part of top surface of the crucible, and the heat dissipation component is of a heat dissipation inner diameter and a heat dissipation height which exceeds a thickness of the thermally insulating material.
2. The device of claim 1 , wherein the crucible is a graphite crucible.
3. The device of claim 1 , wherein the heat dissipation inner diameter equals one of 10˜250 mm and 1%˜85% of an outer diameter of an upper portion of the crucible.
4. The device of claim 1 , wherein the heat dissipation height equals 5˜200 mm.
5. The device of claim 1 , wherein the heat dissipation component is made of one of a porous, thermally insulating carbon material, a graphite, and a graphite felt.
6. The device of claim 1 , wherein the thermally insulating material is a graphite felt.
7. The device of claim 1 , wherein the material source region contains the material source.
8. The device of claim 1 , wherein the material source is one of a silicon carbide powder and a nitride powder.
9. The device of claim 1 , wherein the heating components are each one of a heating coil and a heating resistance wire/netting.
10. The device of claim 1 , wherein the seed crystal is a monocrystalline wafer of a thickness of at least 350 μm and a diameter of 2-6 inches and is for growing monocrystalline crystals which outgrow the seed crystal in size.