Systems and methods for time of flight laser pulse engineering
A time-of-flight 3D imaging system includes a light source having a plurality of P-N junctions in electrical series, an imaging sensor, and a time measurement device configured to measure the elapsed time-of-flight between a pulse of output light being emitted from the plurality of P-N junctions in series and incoming light including the pulse of output light being detected at the imaging sensor.
1. A time-of-flight imaging system, the system comprising:
a light source having a plurality of P-N junctions in electrical series, the P-N junctions of the plurality of P-N junctions having an active emitter width of about 100 microns or greater and an active emitter length of about 500 microns or greater, the plurality of P-N junctions configured to produce a pulse of output light in a first wavelength range; and
a time-of-flight camera including:
an imaging sensor configured to receive light in the first wavelength range, and
a time measurement device configured to measure the time-of-flight of the pulse of output light to the imaging sensor.
2. The system of claim 1 , wherein the plurality of P-N junctions is in a triple-junction laser diode.
3. The system of claim 1 , wherein the plurality of P-N junctions are multimode laser diodes.
4. The system of claim 1 , wherein the active emitter length is in a range of 500 microns to 4000 microns.
5. The system of claim 1 , wherein the active emitter width is in a range of 100 microns to 1000 microns.
6. The system of claim 1 , further comprising an infrared band-pass filter positioned in series with the imaging sensor to filter out ambient light.
7. The system of claim 1 , wherein the plurality of P-N junctions has a peak output power of 5 watts or greater.
8. The system of claim 1 , wherein the plurality of P-N junctions has a slope efficiency of 2.0 Watts/Amp or greater.
9. The system of claim 1 , wherein the plurality of P-N junctions further comprises a plurality of laser diodes on a substrate.
10. A method of time-of-flight imaging, the method comprising:
emitting a broad area light pulse with a broad area multi junction laser diode, wherein the multi junction laser diode includes an active emitter having a length of about 500 microns or greater;
detecting an incoming light including a reflected light pulse with an imaging sensor; and
measuring an elapsed time-of-flight between emitting the broad area light pulse and detecting the reflected light pulse.
11. The method of claim 10 , wherein the broad area light pulse has a pulse time of less than 10 nanoseconds.
12. The method of claim 10 , wherein the broad area light pulse has a peak intensity of 5 watts or greater.
13. The method of claim 10 , wherein detecting the reflected light pulse includes using a plurality of pixels.
14. The method of claim 10 , further comprising coordinating the emitting and the detecting such that detecting the incoming light has an exposure time equivalent to a duration of the broad area light pulse.
15. The method of claim 14 , wherein coordinating the emitting and detecting includes controlling a shutter system of the imaging sensor.
16. The method of claim 15 , wherein the method further includes at least one of:
a start of the exposure time being offset from a start of a duration of the broad area light pulse, or
the broad area pulse and exposure at an imaging sensor of the reflected light pulse being modulated in coordination with a modulation frequency of between 10 and 500 MHz.
17. The method of claim 10 , wherein detecting the reflected light pulse has an exposure time of 50 nanoseconds or less.
18. A time-of-flight imaging system, the system comprising:
a multi junction laser light source having an active emitter width of about 100 microns or greater and an active emitter length of about 500 microns or greater, the multi-junction laser light source configured to produce a pulse of output light in a first wavelength range; and
a time-of-flight camera, the time-of-flight camera including:
an imaging sensor having a plurality of pixels and a shutter system to selectively allow an exposure of light to the plurality of pixels, the shutter system having a rise and fall time of at least 1 nanosecond,
a pulse coordination device configured to temporally coordinate the pulse of output light from the multi junction laser diode and an exposure of light to the plurality of pixels with a duration of the pulse of output light,
a band-pass filter, the band-pass filter configured to pass a second wavelength range to the imaging sensor, the first wavelength range and second wavelength range at least partially overlapping, and
a time measurement device configured to measure an elapsed time-of-flight of the pulse of output light to the imaging sensor.
19. The system of claim 18 , wherein the imaging sensor is selected from a group consisting of a charge coupled device and a complimentary metal-oxide semiconductor.
20. The system of claim 18 , wherein the active emitter length is 500 microns.