Wet strippable OPL using reversible UV crosslinking and de-crosslinking
Embodiments of the present invention are directed to the wet stripping of an organic planarization layer (OPL) using reversible UV crosslinking and de-crosslinking. In a non-limiting embodiment of the invention, an interlayer dielectric is formed over a substrate. A trench is formed in the interlayer dielectric. A work function metal is formed over the interlayer dielectric such that a portion of the work function metal partially fills the trench. A UV sensitive OPL is formed over the work function metal such that a portion of the UV sensitive OPL fills the trench. The UV sensitive OPL can be crosslinked by applying light at a first UV frequency and de-crosslinked by applying light at a second UV frequency.
1. A method for forming a semiconductor device, the method comprising:
forming an interlayer dielectric over a substrate;
forming a trench in the interlayer dielectric;
forming a work function metal over the interlayer dielectric, a portion of the work function metal partially filling the trench; and
forming a UV sensitive organic planarization layer (OPL) over the work function metal, a portion of the UV sensitive OPL filling the trench;
wherein the UV sensitive OPL comprises a functional group that can be crosslinked by applying light at a first UV frequency and de-crosslinked by applying light at a second UV frequency.
2. The method of claim 1 , wherein the first UV frequency is higher than the second UV frequency.
3. The method of claim 2 , wherein the first UV frequency is about 365 nm.
4. The method of claim 2 , wherein the second UV frequency is about 248 nm.
5. The method of claim 1 , wherein the functional group comprises cinnamoyl, coumarin, anthracene, or a combination thereof.
6. The method of claim 5 , wherein the functional group is covalently bonded to a polymer.
7. The method of claim 6 , wherein the polymer comprises a polystyrene, polyethylene, polyacrylate, polyamide, polyether, polyester, poly(N-acetylethylenimine), polyurethane, polyoxazoline, or a combination thereof.
8. The method of claim 1 further comprising patterning the work function metal.
9. The method of claim 8 further comprising, prior to patterning the work function metal, crosslinking the UV sensitive OPL.
10. The method of claim 9 , wherein the UV sensitive OPL is crosslinked using a UV curing process at the first UV frequency.
11. The method of claim 8 further comprising, after patterning the work function metal, de-crosslinking the UV sensitive OPL.
12. The method of claim 11 , wherein the UV sensitive OPL is de-crosslinked using a UV curing process at the second UV frequency.
13. The method of claim 11 further comprising removing the de-crosslinked UV sensitive OPL to expose a surface of the work function metal.
14. A method for forming a semiconductor device, the method comprising:
forming a UV sensitive organic planarization layer (OPL) over a substrate, the UV sensitive OPL comprising a functional group that can be crosslinked by applying light at a first UV frequency and de-crosslinked by applying light at a second UV frequency;
crosslinking the UV sensitive OPL;
forming an antireflective coating over the crosslinked UV sensitive OPL;
removing a portion of the crosslinked UV sensitive OPL to expose a surface of the substrate;
de-crosslinking the UV sensitive OPL; and
removing the de-crosslinked UV sensitive OPL.
15. The method of claim 14 , wherein removing the de-crosslinked UV sensitive OPL comprises exposing the UV sensitive OPL to a solvent.
16. The method of claim 15 , wherein the solvent comprises silicone oil (QZ), normal butyl alcohol (NBA), gamma-butyrolactone (GBL), isopropyl alcohol (IPA), propylene glycol monomethyl ether acetate (PGMEA), or a combination thereof.
17. The method of claim 14 , wherein the UV sensitive OPL is crosslinked using a UV curing process at a UV frequency of about 365 nm.
18. The method of claim 14 , wherein the UV sensitive OPL is de-crosslinked using a UV curing process at a UV frequency of about 248 nm.