Semiconductor device and method of forming the same
A method for forming a semiconductor device is disclosed. A p-type field-effect transistor (p-FET) is formed on a semiconductor substrate. A dielectric layer is formed on the semiconductor substrate and completely covers the p-FET. At least an opening is formed in the dielectric layer and exposes a source/drain region of the p-FET. A conductive material is then formed filling the opening, wherein the conductive material comprises a first stress; specifically, a tensile stress between 400 and 800 MPa.
1. A method for forming a semiconductor device, comprising:
forming a p-type field-effect transistor (p-FET) on a semiconductor substrate;
forming a dielectric layer on the semiconductor substrate, covering the p-FET;
forming at least an opening in the dielectric layer to expose a source/drain region of the p-FET;
forming a liner conformally covering the opening; and
forming a conductive material on the liner and completely filling the opening, wherein the conductive material is made of cobalt (Co) and has a top surface coplanar with a top surface of the dielectric layer and provides a pre-determined magnitude of tensile stress to the p-FET to obtain an improved negative bias temperature instability (NBTI) of the p-FET.
2. The method for forming a semiconductor device according to claim 1 , wherein the conductive material is formed by performing an atomic layer deposition (ALD) process.
3. The method for forming a semiconductor device according to claim 1 , further comprising performing a rapid thermal process (RTP) to react the liner with the source/drain region to form a silicide layer in the source/drain region before forming the conductive material.
4. The method for forming a semiconductor device according to claim 3 , wherein the silicide layer comprises titanium silicide.
5. The method for forming a semiconductor device according to claim 3 , wherein the silicide layer comprises cobalt silicide.
6. The method for forming a semiconductor device according to claim 1 , wherein the liner comprises cobalt (Co), titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN) or any combination thereof.
7. The method for forming a semiconductor device according to claim 1 , wherein the pre-determined magnitude of tensile stress of the conductive material is between 400 and 800 MPa.
8. A semiconductor device, comprising:
a semiconductor substrate;
a p-type field-effect transistor (p-FET) formed on the semiconductor substrate;
a dielectric layer formed on the semiconductor substrate and covering the p-FET; and
a contact plug formed in the dielectric layer, adjacent to one side of the p-FET and contacting a source/drain region of the p-FET, wherein the contact plug is filled up with a conductive material comprising cobalt (Co) and has a liner disposed between the conductive material and the dielectric layer and the source/drain region of the p-FET, wherein a top surface of the liner and a top surface of the conductive material are coplanar with a top surface of the dielectric layer, wherein the conductive material has a pre-determined magnitude of tensile stress to the p-FET to obtain an improved negative bias temperature instability (NBTI) of the p-FET.
9. The semiconductor device according to claim 8 , further comprising a silicide layer between the liner and the source/drain region.
10. The semiconductor device according to claim 9 , wherein the silicide layer comprises titanium silicide.
11. The semiconductor device according to claim 9 , wherein the silicide layer comprises cobalt silicide.
12. The semiconductor device according to claim 8 , wherein the liner comprises cobalt (co), titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN) or any combination thereof.
13. The semiconductor device according to claim 8 , wherein the conductive material is not in direct contact with the dielectric layer.
14. The semiconductor device according to claim 8 , wherein the pre-determined magnitude of tensile stress of the conductive material is between 400 and 800 MPa.