IP Library Granted Patent US 10,393,449
Granted Patent B2
US 10,393,449 · App. 15/468,556 · Granted Aug 27, 2019

Heat storage member

Inventors: Shinichi Miwa (Nagoya, JP); Toshiharu Kinoshita (Kani-Gun, JP); Iori Himoto (Kani-Gun, JP); Yukitaka Kato (Tokyo, JP); Jun Kariya (Tokyo, JP)
Assignees: NGK Insulators, Ltd.; NGK Adrec Co., Ltd.; Tokyo Institute of Technology
F28D20/003C09K5/16F28D2020/0017Y02E60/142
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Quick Facts
Patent No.
US 10,393,449
App. No.
15/468,556
Granted
Aug 27, 2019
Kind
B2
Abstract

A heat storage member including a substrate containing a SiC sintered body as a principal ingredient and a heat storage material configured to store and radiate heat by a reversible chemical reaction with a reaction medium or a heat storage material configured to store and radiate heat by physical adsorption to a reaction medium and physical desorption from a reaction medium. The substrate has a three-dimensional network structure including a skeleton having porosity of 1% or less. A void ratio of a void formed in the three-dimensional network structure of the substrate is ranging from 30 to 95%. The heat storage material is disposed at least in a part of a surface of the void in the three-dimensional network structure of the substrate.

Claims (15)

1. A heat storage member comprising:

a substrate containing a SiC sintered body as a principal ingredient; and

a heat storage material configured to store and radiate heat by a reversible chemical reaction with a reaction medium, or

a heat storage material configured to store and radiate heat by physical adsorption to a reaction medium and physical desorption from a reaction medium;

wherein the substrate has a three-dimensional network structure including a skeleton having porosity of 1% or less, a void ratio of the three-dimensional network structure of the substrate is ranging from 30 to 95%, and the heat storage material is disposed at least in a part of a surface of a void in the three-dimensional network structure of the substrate, and

wherein the three-dimensional network structure has a metal Si core and a SiC surface layer.

2. The heat storage member according to claim 1 , wherein the substrate has a content ratio of SiC in the skeleton ranging from 40 to 99.7% by mass, excluding an impure ingredient inevitably contained in a raw material.

3. The heat storage member according to claim 1 , wherein a content ratio of metal Si in the skeleton is ranging from 5 to 60% by mass.

4. The heat storage member according to claim 1 , wherein the three-dimensional network structure includes a first end face and a second end face opposing each other, a density of the skeleton included in the three-dimensional network structure differs between a first cross section including a direction from the first end face to the second end face and a second cross section including a direction perpendicular to the first cross section, and the density of the skeleton in a cross section having higher density of the skeleton among the first cross section and the second cross sections is 1 to 10 times as large as the density of the skeleton in a cross section having lower density of the skeleton.

5. The heat storage member according to claim 1 , wherein the skeleton included in the three-dimensional network structure includes a protrusion in a surface of the skeleton.

6. The heat storage member according to claim 1 , wherein the heat storage material includes at least one selected from the group consisting of oxides of Mg, Ca, Sr, Ba, hydroxides of Mg, Ca, Sr, Ba, carbonates of Mg, Ca, Sr, Ba, chlorides of Mg, Ca, Sr, Ba, sulfates of Mg, Ca, Sr, Ba, and zeolite.

7. The heat storage member according to claim 1 , wherein the heat storage material is a particulate having an average particle diameter ranging from 5 nm to 100 μm.

8. The heat storage member according to claim 1 , wherein a surface layer of the substrate includes a surface layer containing an ingredient different from that of the substrate.

9. The heat storage member according to claim 1 , wherein the substrate contains a Si—SiC sintered body as a principal ingredient, and

wherein the three-dimensional network structure has a core of metal Si as a principal ingredient and carbon, and a surface layer facing the void and having SiC as a principal ingredient and metal silicon.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 4, 2018
From: MIWA, SHINICHI; KINOSHITA, TOSHIHARU; HIMOTO, IORI; KATO, YUKITAKA; KARIYA, JUN
To: NGK INSULATORS, LTD.; NGK ADREC CO., LTD.; TOKYO INSTITUTE OF TECHNOLOGY
Reel/Frame 047669/0935 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 24, 2017
From: MIWA, SHINICHI; KINOSHITA, TOSHIHARU; HIMOTO, IORI
To: NGK INSULATORS, LTD.; NGK ADREC CO., LTD.
Reel/Frame 041725/0731 →
Priority Claims (1)
JP 2016-073353 · Mar 31, 2016 · national
Continuity (1)
Related Publication 20170284746A1 · Oct 5, 2017