Metal on both sides of the transistor integrated with magnetic inductors
An apparatus and a system including an apparatus including a circuit structure including a device stratum including a plurality of transistor devices each including a first side and an opposite second side; an inductor disposed on the second side of the structure; and a contact coupled to the inductor and routed through the device stratum and coupled to at least one of the plurality of transistor devices on the first side. A method including forming a plurality of transistor devices on a substrate, the plurality of transistor devices defining a device stratum including a first side and an opposite second side, wherein the second side is coupled to the substrate; removing a portion of the substrate; forming at least one inductor on the second side of the device stratum; and coupling the at least one inductor to at least one of the plurality of transistor devices.
1. An apparatus comprising:
a circuit structure comprising a device stratum comprising a plurality of transistor devices each comprising a first side and an opposite second side;
an inductor disposed on the second side of the structure; and
a contact coupled to the inductor and routed through the device stratum and coupled to at least one of the plurality of transistor devices on the first side, wherein the contact does not extend entirely through the device stratum.
2. The apparatus of claim 1 , wherein the inductor comprises a magnetic inductor.
3. The apparatus of claim 1 , wherein the device stratum is disposed on a substrate and the substrate is disposed between the device stratum and a supply line.
4. The apparatus of claim 3 , wherein the contact is routed through the substrate.
5. The apparatus of claim 1 , further comprising at least one interconnect layer disposed on the second side of the structure and at least one second contact coupled to the at least one interconnect layer.
6. The apparatus of claim 5 , further comprising contact points disposed on the second side of the device stratum operable to be coupled to an external source and coupled to the at least one interconnect layer.
7. The apparatus of claim 1 , wherein the inductor is a voltage regulator, the apparatus further comprising at least one interconnect disposed on the second side of the device stratum operable to carry a power supply, the at least one interconnect coupled to the voltage regulator.
8. The apparatus of claim 1 , further comprising at least one interconnect on the second side of the device stratum and coupled to the inductor, wherein the interconnect is coupled between the inductor and the contact.
9. A system comprising:
a package substrate comprising a supply connection; and
a die coupled to the package substrate, the die comprising:
(i) a device stratum comprising a plurality of transistor devices each comprising a first side and an opposite second side;
(ii) an inductor disposed on the second side of the structure; and
(iii) a contact coupled to the inductor and routed through the device stratum and coupled to at least one of the plurality of transistor devices on the first side, wherein the contact does not extend entirely through the device stratum.
10. The system of claim 9 , wherein the inductor is a magnetic inductor.
11. The system of claim 9 , wherein the device stratum is disposed on a substrate and the substrate is disposed between the device stratum and the supply line.
12. The system of claim 11 , wherein the contact is routed through the substrate.
13. The system of claim 9 , wherein the inductor comprises a magnetic inductor, the die further comprising at least one interconnect disposed on the second side of the device stratum operable to carry a power supply, the at least one interconnect coupled to the magnetic inductor.
14. The system of claim 13 , wherein the magnetic inductor comprises a voltage regulator.
15. A method comprising:
forming a plurality of transistor devices on a substrate, the plurality of transistor devices defining a device stratum comprising a first side and an opposite second side, wherein the second side is coupled to the substrate;
removing a portion of the substrate;
forming at least one inductor on the second side of the device stratum; and
coupling the at least one inductor to at least one of the plurality of transistor devices with a contact, wherein the contact does not extend entirely through the device stratum.
16. The method of claim 15 , wherein the inductor comprises a magnetic inductor.
17. The method of claim 15 , wherein removing a portion of the substrate comprises removing the entire portion of the substrate.
18. The method of claim 15 , further comprising:
forming at least one interconnect on the second side of the device stratum; and
coupling the at least one inductor to the at least one interconnect, wherein coupling the at least one inductor to at least one of the plurality of transistor devices comprises coupling the at least one interconnect to the at least one of the plurality of transistor devices.
19. The method of claim 18 , further comprising forming contact points on the second side of the device stratum operable to be coupled to an external source and coupled to the at least one interconnect.
20. The method of claim 19 , wherein the at least one inductor comprises a voltage regulator.