Semiconductor devices and methods for forming semiconductor devices
A semiconductor device includes a transistor doping region of a vertical transistor structure arranged in a semiconductor substrate. Additionally, the semiconductor device includes a graphene layer portion located adjacent to at least a portion of the transistor doping region at a surface of the semiconductor substrate. The semiconductor device further includes a transistor wiring structure located adjacent to the graphene layer portion.
1. A semiconductor device comprising:
a transistor doping region of a vertical transistor structure arranged in a semiconductor substrate;
a plurality of graphene layer portions, wherein each of the plurality of graphene layer portions is located adjacent to a respective portion of the transistor doping region at a surface of the semiconductor substrate; and
a transistor wiring structure located adjacent to the plurality of graphene layer portions,
wherein the transistor wiring structure is in contact with the transistor doping region between neighboring graphene layer portions of the plurality of graphene layer portions.
2. The semiconductor device according to claim 1 , wherein the transistor doping region is a source doping region of the vertical transistor structure.
3. The semiconductor device according to claim 1 , further comprising:
a body doping region of the vertical transistor structure arranged adjacent to the transistor doping region in the semiconductor substrate,
wherein an average doping concentration of the transistor doping region is greater than 80% of an average doping concentration of the body doping region and is less than 1000% of the average doping concentration of the body doping region of the vertical transistor structure.
4. The semiconductor device according to claim 3 , wherein an average doping concentration of the transistor doping region is less than 5*10 18 dopant atoms per cm 3 .
5. The semiconductor device according to claim 1 , wherein the plurality of graphene layer portions are portions of a graphene monolayer.
6. The semiconductor device according to claim 1 , wherein the neighboring graphene layer portions of the plurality of graphene layer portions are located at a distance of at least 1 μm from one another.
7. The semiconductor device according to claim 1 , wherein the transistor doping region is arranged in an epitaxial semiconductor layer of the semiconductor substrate.
8. The semiconductor device according to claim 1 , wherein the semiconductor substrate is a silicon carbide based semiconductor substrate.
9. The semiconductor device according to claim 1 , wherein the vertical transistor structure comprises a breakdown voltage of more than 10V.
10. A method for forming a semiconductor device, the method comprising:
forming a transistor doping region of a vertical transistor structure in a semiconductor substrate;
forming a plurality of graphene layer portions located adjacent to at least a portion of the transistor doping region at a surface of the semiconductor substrate, wherein each of the plurality of graphene layer portions is located adjacent to a respective portion of the transistor doping region at the surface of the semiconductor substrate; and
forming a transistor wiring structure located adjacent to the plurality of graphene layer portions, wherein the transistor wiring structure is in contact with the transistor doping region between neighboring graphene layer portions of the plurality of graphene layer portions.
11. The method according to claim 10 , wherein the semiconductor substrate is a silicon carbide based semiconductor substrate comprising the surface, and wherein the silicon carbide based semiconductor substrate is tempered to form the plurality of graphene layer portions at the surface of the silicon carbide based semiconductor substrate.
12. The method according to claim 11 , wherein the plurality of graphene layer portions are formed before forming of a gate oxide of the vertical transistor structure.
13. The method according to claim 11 , wherein the plurality of graphene layer portions are formed at a silicon terminated side of the silicon carbide based semiconductor substrate.
14. The method according to claim 11 , further comprising:
removing a portion of the plurality of graphene layer portions located laterally outside of the transistor doping region.
15. The method according to claim 10 , further comprising:
forming a carbonaceous metal layer at the surface of the semiconductor substrate; and
segregating carbon atoms from the carbonaceous metal layer at an interface between the semiconductor substrate and the carbonaceous metal layer to form the plurality of graphene layer portions between the semiconductor substrate and the carbonaceous metal layer.
16. The method according to claim 15 , further comprising:
removing the carbonaceous metal layer from the plurality of graphene layer portions after segregating of the carbon atoms from the carbonaceous metal layer and before forming of the transistor wiring structure.
17. The method according to claim 15 , wherein the plurality of graphene layer portions are formed after forming of a gate oxide of the vertical transistor structure.
18. A method for forming a semiconductor device, the method comprising:
forming a transistor doping region of a vertical transistor structure in a semiconductor substrate;
forming a graphene layer portion located adjacent to at least a portion of the transistor doping region at a surface of the semiconductor substrate;
forming a transistor wiring structure located adjacent to the graphene layer portion;
forming a carbonaceous metal layer at the surface of the semiconductor substrate; and
segregating carbon atoms from the carbonaceous metal layer at an interface between the semiconductor substrate and the carbonaceous metal layer to form the graphene layer portion between the semiconductor substrate and the carbonaceous metal layer,
wherein the carbonaceous metal layer forms at least a portion of the transistor wiring structure.