CdTe-based double heterostructures and related light-conversion devices
Devices converting light to electricity (such as solar cells or photodetectors) including a heavily-doped p-type a-SiC y :H and an i-Mg x Cd 1-x Te/n-CdTe/N—Mg 0.24 Cd 0.76 Te double heterostructure (DH), with power conversion efficiency of as high as 17%, V oc as high as 1.096 V, and all operational characteristics being substantially better than those of monocrystalline solar cells known to-date. The a-SiC y :H layer is configured to enable high built-in potential while, at the same time, allowing the doped absorber to maintain a very long carry lifetime. In comparison, similar undoped CdTe/Mg x Cd 1-x Te DH designs reveal a long carrier lifetime of 3.6 μs and an interface recommendation velocity of 1.2 cm/s, which are lower than the record values reported for GaAs/Al 0.5 Ga 0.5 As (18 cm/s) and GaAs/Ga 0.5 In 0.5 P (1.5 cm/s) DHs.
1. A device configured to convert light to electricity, the device comprising:
an InSb substrate, and
a double-heterojunction (DH) structure carried on said InSb substrate, said DH structure including a CdTe-containing absorber layer sandwiched between first and second MgxCd 1-x Te-containing barrier layers,
wherein the first and second barrier layers are configured to confine minority carriers to said absorber layer, and
wherein said DH structure is characterized by an open-circuit voltage that exceeds 1 V,
and further comprising a layer of a-Si:H on the DH structure, said a-Si:H layer configured as a p-type doped electrical contact layer, and
wherein a barrier layer from the first and second barrier layers contains a spatial doping material profile that is not uniform across the thickness of said barrier layer.
2. The device according to claim 1 , further comprising an electrode layer and a p-typed doped contact layer configured between said electrode layer and said DH structure.
3. The device according to claim 1 , wherein said p-type doped contact layer is a p-aSiC y :H contact layer, wherein a value of y is within a range between zero and 0.5, inclusive of zero.
4. The device according to claim 1 , characterized by an effective radiative lifetime of carriers, in said DH structure, that exceeds 2 microseconds.
5. The device according to claim 1 , characterized by an effective radiative lifetime of carriers, in said DH structure, that exceeds 3 microseconds.
6. The device according to claim 1 , wherein an absolute value of interface recombination velocity (IRV) of carriers in said DH structure is lower than a first IRV of carriers characterizing a first material interface and lower than a second IRV of carriers characterizing a second material interface, the first material interface including a GaAs/Al 0.5 Ga 0.5 As material interface and the second material interface including a GaA/Ga 0.5 In 0.5 P material interface.
7. The device according to claim 1 , wherein an absolute value of IRV of carriers in said DH structure is lower than 1.5 m/s.
8. The device according to claim 1 , wherein said DH structure includes a p-type ZnTe doping material.
9. The device according to claim 1 , further comprising a p-type doped contact layer on said DH structure, said p-type contact layer containing a layer of aSiC y :H and an immediately neighboring aSi:H layer,
wherein y is about 6%,
wherein the first barrier layer is a 10 nm thick undoped Mg 0.30 Cd 0.70 Te barrier layer, the first barrier layer being the closest of the first and second barrier layers to the p-type doped contact layer,
wherein the absorber layer has an approximately 1 micron thickness and is doped with n-type In doping at a level of about 3e 16 cm −3 .
10. The device according to claim 1 , further comprising a p-type doped contact layer on said DH structure, said p-type contact layer including a layer of aSi:H,
wherein the first barrier layer is a 10 nm thick undoped Mg 0.30 Cd 0.70 Te barrier layer, the first barrier layer being the closest, of the first and second barrier layers, to the p-type doped contact layer, and
wherein the absorber layer has an approximately 1.4 micron thickness and is doped with n-type In at a first level of about 1e 16 cm −3 in a first portion of said absorber layer and at a second level of about 5e 17 cm −3 in a second portion of said absorber, the first portion being about 1 micron thick, the second portion being spatially complementary to said first portion.
11. The PV cell according to claim 10 , wherein the second portion of the absorber layer is separated from said contact layer by the first portion of said absorber layer.
12. A device configured to convert light to electricity, the device comprising:
an InSb substrate, and
a double-heterojunction (DH) structure carried on said InSb substrate, said DH structure including a CdTe-containing absorber layer sandwiched between first and second Mg x Cd 1-x Te-containing barrier layers,
wherein the first and second barrier layers are configured to confine minority carriers to said absorber layer, and
wherein a pn-junction is formed outside of the absorber layer,
and further comprising a layer of a-Si:H on the DH structure, said a-Si:H layer
configured as a p-type doped electrical contact layer, and
wherein a barrier layer from the first and second barrier layers contains a spatial doping material profile that is not uniform across the thickness of said barrier layer.
13. A device according to claim 12 , wherein said DH structure is characterized by an open-circuit voltage that exceeds 1 V.
14. A device according to claim 12 , wherein said p-type doped contact layer is a p-aSiC y :H contact layer, wherein a value of y is within a range between and inclusive of zero and 0.5.
15. The device according to claim 12 , characterized by an effective radiative lifetime of carriers, in said DH structure, that exceeds 2 microseconds.
16. The device according to claim 12 , wherein an absolute value of interface recombination velocity (IRV) of carriers in said DH structure is lower than a first IRV of carriers characterizing a first material interface and lower than a second IRV of carriers characterizing a second material interface, the first material interface including a GaAs/Al 0.5 Ga 0.5 As material interface and the second material interface including a GaA/Ga 0.5 In 0.5 P material interface.
17. The device according to claim 12 , wherein at least one of the following conditions is satisfied: (i) an absolute value of IRV of carriers in said DH structure is lower than 1.5 m/s and (ii) wherein said DH structure includes a p-type ZnTe doping material.
18. The device according to claim 12 , further comprising a p-type doped contact layer on said DH structure, said p-type contact layer containing a layer of aSiC y :H and an immediately neighboring aSi:H layer,
wherein y is about 6%,
wherein the first barrier layer is a 10 nm thick undoped Mg 0.30 Cd 0.70 Te barrier layer, the first barrier layer being the closest of the first and second barrier layers to the p-type doped contact layer,
wherein the absorber layer has an approximately 1 micron thickness and is doped with n-type In doping at a level of about 3e 16 cm −3 .
19. The device according to claim 12 , further comprising a p-type doped contact layer on said DH structure, said p-type contact layer including a layer of aSi:H,
wherein the first barrier layer is a 10 nm thick undoped Mg 0.30 Cd 0.70 Te barrier layer, the first barrier layer being the closest, of the first and second barrier layers, to the p-type doped contact layer, and
wherein the absorber layer has an approximately 1.4 micron thickness and is doped with n-type In at a first level of about 1e 16 cm −3 in a first portion of said absorber layer and at a second level of about 5e 17 cm −3 in a second portion of said absorber, the first portion being about 1 micron thick, the second portion being spatially complementary to said first portion.
20. The PV cell according to claim 19 , wherein the second portion of the absorber layer is separated from said contact layer by the first portion of said absorber layer.