Method for manufacturing metal chalcogenide thin film and thin film manufactured thereby

1. A method of manufacturing a metal chalcogenide thin film comprising:

supplying a gasified metal precursor by heating MoO 3 powder;

supplying a chalcogen-containing gas including H 2 S;

reacting the metal precursor with the chalcogen-containing gas on a growth substrate under a first temperature condition to form an MoS 2 thin film;

conducting a heat treatment under a second temperature condition higher than the first temperature condition;

cooling to lower a temperature; and

transferring the formed MoS 2 thin film to a final substrate,

wherein the growth substrate comprises a substrate including SiO 2 disposed on Si, and reacting the metal precursor with the chalcogen-containing gas is performed such that the metal chalcogenide thin film is directly formed on the substrate including SiO 2 disposed on Si,

wherein reacting the metal precursor with the chalcogen-containing gas is carried out at a temperature lower than a melting point of metal of the metal precursor,

wherein the second temperature condition is 850 to 1,200° C.,

wherein manufacturing the MoS 2 thin film is carried out using a plasma enhanced chemical vapor deposition (CVD) method,

wherein the first temperature is 100° C. or lower, and

wherein the MoS 2 thin film has a domain size of 50 to 100 nm.

2. The method according to claim 1 , wherein the formation or heat treatment of the MoS 2 thin film is carried out under an argon gas atmosphere.

3. The method according to claim 1 , wherein the formation of the MoS 2 thin film comprises forming a compound or mixture of at least two types of metal chalcogenides.

4. The method according to claim 1 , wherein the chalcogen-containing gas is supplied from a tube.

5. The method according to claim 1 , wherein transferring the formed MoS 2 thin film to the final substrate includes:

forming or attaching a support substrate on a first surface of the MoS 2 thin film;

removing the SiO 2 ;

attaching the final substrate to a second surface of the MoS 2 thin film; and

separating or removing the support substrate.

6. The method according to claim 5 , wherein the support substrate includes a resin including PMMA, PDMS or PVA.

7. The method according to claim 5 , wherein the support substrate is adhered using a release tape including a heat release tape or an optical release tape.