Active showerhead
An active showerhead used for a plasma reactor is described. The active showerhead includes a plurality of substrate layers. The substrate layers include at least one actuator and transfer component. The actuator and transfer component is coupled to a gas line via a gas channel. The active showerhead further includes an electrode layer located below the substrate layers. The electrode layer and the actuator and transfer component both share an opening. The actuator and transfer component allows passage of one or more process gases received from the gas line and the gas channel into the opening without the need for a conventional gas box.
1. A system for semiconductor processing, comprising:
an actuator control;
a gas line;
a plasma reactor coupled to the gas line and the actuator control, the plasma reactor including:
a chuck assembly; and
an active showerhead located above the chuck assembly, the active showerhead including:
a plurality of substrate layers, wherein the plurality of substrate layers include an actuator and transfer component coupled to the actuator control, wherein the actuator and transfer component is coupled to the gas line via a gas channel;
an electrode layer located below the plurality of substrate layers, wherein the electrode layer and the actuator and transfer component share an opening that leads to a mixing chamber,
wherein the actuator control is configured to control the actuator and transfer component to allow passage of one or more process gases received from the gas line and the gas channel via the opening into the mixing chamber,
wherein the active showerhead further includes a measurement layer located above the plurality of substrate layers, wherein the measurement layer has integrated therein a metrology tool, wherein the gas channel is routed via the measurement layer to allow the metrology tool to measure a parameter associated with the one or more process gases.
2. The system of claim 1 , wherein the active showerhead includes a gas reservoir layer for storing the one or more process gases.
3. The system of claim 1 , wherein the plurality of substrate layers include a second actuator and transfer component, the system further including a second gas line, wherein the second actuator and transfer component is coupled to the second gas line via a second gas channel.
4. The system of claim 3 , wherein the electrode layer and the second actuator and transfer component share a second opening that leads to the mixing chamber.
5. The system of claim 4 , wherein the actuator control is configured to control the second actuator and transfer component to allow passage of one or more process gases received from the second gas line and the second gas channel via the second opening into the mixing chamber.
6. The system of claim 4 , wherein the electrode layer has a plurality of openings extending through the electrode layer, wherein the plurality of openings includes the opening and the second opening.
7. The system of claim 4 , further comprising:
an insulator layer located below the measurement layer;
a gas reservoir layer located below the insulator layer for storing the one or more process gases;
a substrate support layer located below the gas reservoir layer, wherein the plurality of substrate layers are located below the substrate support layer.
8. The system of claim 7 , further comprising a showerhead plate located below the mixing chamber, wherein the showerhead plate and the chuck assembly are placed apart from each other to form a gap therebetween.
9. The system of claim 8 , wherein the one or more process gases are transferred via the mixing chamber and the showerhead plate to the gap between the showerhead plate and the chuck assembly.
10. The system of claim 1 , wherein the actuator and transfer layer is coupled to the measurement layer via the gas channel.
11. An active showerhead comprising:
a plurality of substrate layers, wherein the plurality of substrate layers include an actuator and transfer component, wherein the actuator and transfer component is configured to be coupled to a gas line via a gas channel;
an electrode layer located below the plurality of substrate layers, wherein the electrode layer and the actuator and transfer component share an opening that leads to a mixing chamber,
wherein the actuator and transfer component is configured to allow passage of one or more process gases received from the gas line and the gas channel via the opening into the mixing chamber; and
a measurement layer located above the plurality of substrate layers, wherein the measurement layer has integrated therein a metrology tool, wherein the gas channel is routed via the measurement layer to allow the metrology tool to measure a parameter associated with the one or more process gases.
12. The active showerhead of claim 11 , further comprising a gas reservoir layer for storing the one or more process gases.
13. The active showerhead of claim 11 , wherein the plurality of substrate layers include a second actuator and transfer component, wherein the second actuator and transfer component is configured to be coupled to a second gas line via a second gas channel.
14. The active showerhead of claim 13 , wherein the electrode layer and the second actuator and transfer component share a second opening that leads to the mixing chamber.
15. The active showerhead of claim 14 , wherein the second actuator and transfer component is configured to allow passage of one or more process gases received from the second gas line and the second gas channel via the second opening into the mixing chamber.
16. The active showerhead of claim 14 , wherein the electrode layer has a plurality of openings extending through the electrode layer, wherein the plurality of openings includes the opening and the second opening.
17. The active showerhead of claim 11 , further comprising:
an insulator layer located below the measurement layer;
a gas reservoir layer located below the insulator layer for storing the one or more process gases;
a substrate support layer located below the gas reservoir layer, wherein the plurality of substrate layers are located below the substrate support layer.
18. The active showerhead of claim 11 , further comprising a showerhead plate located below the mixing chamber.
19. The active showerhead of claim 18 , wherein the one or more process gases are transferred via the mixing chamber and the showerhead plate to a gap below the showerhead plate.