Power module with multi-layer substrate
A power system has a single-side-cooled power module including a contiguous five-layer substrate of two insulative layers interleaved with three conductive layers. A center one of the conductive layers is partitioned to define discrete spaced apart positive terminal and output terminal portions, and an outer of the conductive layers defines a negative terminal portion such that the positive terminal and negative terminal portions overlap. The power system also has semiconductors respectively in direct contact with the positive terminal and output terminal portions without directly contacting the other layers.
1. A power system comprising:
a single-side-cooled power module including a contiguous five-layer substrate of two insulative layers interleaved with three conductive layers, a center one of the conductive layers being partitioned to define discrete spaced apart positive terminal and output terminal portions, and an outer of the conductive layers defining a negative terminal portion such that the positive terminal and negative terminal portions overlap;
semiconductor devices being respectively in direct physical contact with the positive terminal and output terminal portions without directly physically contacting other of the layers; and
respective sets of wires interconnecting the output terminal portion and the semiconductor device in direct physical contact with the positive terminal portion, and interconnecting the negative terminal portion and the semiconductor device in direct physical contact with the output terminal portion.
2. The power system of claim 1 , wherein the single-side-cooled power module is a half-bridge.
3. The power system of claim 1 , wherein the conductive layers are metal.
4. The power system of claim 3 , wherein the metal is copper.
5. The power system of claim 1 , wherein the insulative layers are ceramic.
6. A power module comprising:
semiconductor devices mounted on a contiguous five-layer substrate of two insulative layers interleaved with three conductive layers, a center one of the conductive layers being partitioned to define discrete spaced apart positive terminal and output terminal portions, an outer of the conductive layers defining a negative terminal portion, and the semiconductor devices being respectively in direct physical contact with the positive terminal and output terminal portions without directly physically contacting other of the layers.
7. The power module of claim 6 further comprising wires interconnecting the output terminal portion and the semiconductor device in direct physical contact with the positive terminal portion.
8. The power module of claim 6 further comprising wires interconnecting the negative terminal portion and the semiconductor device in direct physical contact with the output terminal portion.
9. The power module of claim 6 , wherein the semiconductor device and substrate are arranged to form a single-side-cooled power module.
10. The power module of claim 9 , wherein the single-side-cooled power module is a half-bridge.
11. The power module of claim 6 , wherein the conductive layers are metal.
12. The power module of claim 11 , wherein the metal is copper.
13. The power module of claim 6 , wherein the insulative layers are ceramic.
14. A power system comprising:
a single-side-cooled power module including three conductive layers alternating with two insulative layers to form a substrate, a center layer of the substrate being discretely partitioned into two portions and two semiconductor devices being respectively directly in physical contact with the two portions such that a positive terminal portion defined by one of the two portions overlaps a negative terminal portion defined by an outer most of the layers.
15. The power system of claim 14 , wherein the other of the two portions defines an output terminal portion.
16. The power system of claim 15 , wherein the single-side-cooled power module further includes wires interconnecting the output terminal portion and the semiconductor device in direct physical contact with the positive terminal portion.
17. The power system of claim 15 , wherein the single-side-cooled power module further includes wires interconnecting the negative terminal portion and the semiconductor device in direct physical contact with the output terminal portion.
18. The power system of claim 14 , wherein the single-side-cooled power module is a half-bridge.
19. The power system of claim 14 , wherein the conductive layers are metal.
20. The power system of claim 14 , wherein the insulative layers are ceramic.