Display device, electronic apparatus, and method of fabricating the display device
It is an object of the invention to provide a technique to manufacture a display device with high image quality and high reliability at low cost with high yield. The invention has spacers over a pixel electrode layer in a pixel region and over an insulating layer functioning as a partition which covers the periphery of the pixel electrode layer. When forming a light emitting material over a pixel electrode layer, a mask for selective formation is supported by the spacers, thereby preventing the mask from contacting the pixel electrode layer due to a twist and deflection thereof. Accordingly, such damage as a crack by the mask does not occur in the pixel electrode layer. Thus, the pixel electrode layer does not have a defect in shapes, thereby a display device which performs a high resolution display with high reliability can be manufactured.
1. A semiconductor device comprising:
a transistor comprising a semiconductor layer over a first substrate;
a first insulating layer over the semiconductor layer, the first insulating layer comprising silicon;
a second insulating layer over the first insulating layer, the second insulating layer comprising a first organic material;
a first electrode over the second insulating layer;
a third insulating layer covering an end portion of the first electrode, the third insulating layer comprising a second organic material;
a layer comprising an organic compound over the first electrode and the third insulating layer;
a second electrode over the layer; and
a fourth insulating layer over the second electrode,
wherein the first electrode is electrically connected to the transistor,
wherein the third insulating layer covers an end portion of the second insulating layer,
wherein the fourth insulating layer covers the end portion of the second insulating layer and an end portion of the third insulating layer, and
wherein the second insulating layer and the third insulating layer are in direct contact with the first insulating layer.
2. The semiconductor device according to claim 1 , wherein the fourth insulating layer comprises aluminum and oxygen.
3. The semiconductor device according to claim 1 ,
wherein the third insulating layer is adjacent to a convex portion, and
wherein the convex portion comprises the second organic material.
4. The semiconductor device according to claim 1 , further comprising a second substrate over the fourth insulating layer.
5. The semiconductor device according to claim 1 , wherein the first substrate is a flexible substrate.
6. The semiconductor device according to claim 1 , wherein the layer is capable of emitting white light.
7. The semiconductor device according to claim 1 , wherein the first organic material comprises any one of polyimide, acrylic, polyamide, and polyimide amide.
8. The semiconductor device according to claim 1 , wherein the first organic material is the same as the second organic material.
9. A display module comprising the semiconductor device according to claim 1 .
10. An electronic apparatus comprising:
a housing; and
a display portion in the housing,
wherein the display portion comprises the display module according to claim 9 .
11. A semiconductor device comprising:
a transistor comprising a semiconductor layer over a first substrate;
a first insulating layer over the semiconductor layer, the first insulating layer comprising silicon;
a second insulating layer over the first insulating layer, the second insulating layer comprising a first organic material;
a first electrode over the second insulating layer;
a third insulating layer covering an end portion of the first electrode, the third insulating layer comprising a second organic material;
a first layer comprising a first organic compound over the first electrode and the third insulating layer;
a second layer comprising a second organic compound over the third insulating layer;
a third layer comprising a third organic compound over the third insulating layer;
a second electrode over the first layer, the second layer, and the third layer; and
a fourth insulating layer over the second electrode,
wherein the first organic compound, the second organic compound, and the third organic compound are different from one another,
wherein the first electrode is electrically connected to the transistor,
wherein the third insulating layer covers an end portion of the second insulating layer,
wherein the fourth insulating layer covers the end portion of the second insulating layer and an end portion of the third insulating layer, and
wherein the second insulating layer and the third insulating layer are in direct contact with the first insulating layer.
12. The semiconductor device according to claim 11 , wherein the fourth insulating layer comprises aluminum and oxygen.
13. The semiconductor device according to claim 11 ,
wherein the third insulating layer is adjacent to a convex portion, and
wherein the convex portion comprises the second organic material.
14. The semiconductor device according to claim 11 , further comprising a second substrate over the fourth insulating layer.
15. The semiconductor device according to claim 11 , wherein the first substrate is a flexible substrate.
16. The semiconductor device according to claim 11 , wherein the first layer is capable of emitting white light.
17. The semiconductor device according to claim 11 , wherein the first organic material comprises any one of polyimide, acrylic, polyamide, and polyimide amide.
18. The semiconductor device according to claim 11 , wherein the first organic material is the same as the second organic material.
19. A display module comprising the semiconductor device according to claim 11 .
20. An electronic apparatus comprising:
a housing; and
a display portion in the housing,
wherein the display portion comprises the display module according to claim 19 .