Flexible display device and method of manufacturing the same

1. A method of manufacturing a flexible display device, the method comprising:

forming a first insulating layer on a surface of a substrate, the substrate comprising a bending region and a non-bending region;

removing, via laser radiation, a portion of the first insulating layer overlapping the bending region;

forming a conductive layer on the first insulating layer; and

forming a light emitting layer overlapping the non-bending region.

2. The method of claim 1 , wherein:

removing the portion of the first insulating layer comprises radiating a laser a plurality of number of times to form a sidewall in the first insulating layer; and

the sidewall in the first insulating layer comprises a tapered surface, the tapered surface comprising at least three curved surfaces continuously arranged with one another.

3. The method of claim 1 , further comprising:

forming, after forming the first insulating layer on the surface of the substrate, a second insulating layer on the first insulating layer; and

forming a third insulating layer on the second insulating layer.

4. The method of claim 3 , wherein:

removing the portion of the first insulating layer comprises radiating a laser a plurality of times to form a sidewall in the second insulating layer and a sidewall in the third insulating layer; and

at least one of the sidewall of the second insulating layer and the sidewall of the third insulating layer comprises a tapered surface, the tapered surface comprising at least three curved surfaces continuously arranged with one another.

5. The method of claim 3 , further comprising:

forming, overlapping the non-bending region, an active pattern on the first insulating layer after forming the first insulating layer;

forming, overlapping the non-bending region, a gate electrode on the second insulating layer after forming the second insulating layer; and

etching, after forming the third insulating layer, the second insulating layer and the third insulating layer to expose respective portions of the active pattern,

wherein, in forming the conductive layer, a source electrode and a drain electrode are formed on the respectively exposed portions of the active pattern.

6. The method of claim 5 , wherein, in exposing the respective portions of the active pattern, the second insulating layer and the third insulating layer are etched, forming an opening exposing at least a portion of the first insulating layer overlapping the bending region.

7. The method of claim 6 , further comprising:

forming, after removing the portion of the first insulating layer, an organic layer at least partially filling the opening.

8. The method of claim 7 , wherein the organic layer is formed by selectively coating an organic material via a dispenser.

9. The method of claim 5 , wherein the second insulating layer and the third insulating layer are etched using a halftone mask or a slit mask.

10. The method of claim 9 , wherein:

removing the portion of the first insulating layer via the laser radiation forms an island in the first insulating layer; and

the island is spaced apart from a remainder of the first insulating layer.

11. The method of claim 10 , further comprising:

forming, after removing the portion of the first insulating layer via the laser radiation, an organic layer at least partially filling an opening exposing at least one of the substrate and the first insulating layer in a region overlapping the bending region,

wherein a surface of the organic layer protrudes away from the substrate, the surface comprising a concavo-convex shape corresponding to a shape of the island.

12. The method of claim 11 , wherein the organic layer is formed by selectively coating an organic material via a dispenser.

13. The method of claim 5 , further comprising:

forming, after forming the third insulating layer on the gate electrode, a second capacitor electrode on the third insulating layer; and

forming, after forming the second capacitor electrode, a fourth insulating layer on the second capacitor electrode,

wherein, in forming the gate electrode on the second insulating layer, a first capacitor electrode disposed at a same layer as the gate electrode is formed.

14. The method of claim 13 , wherein:

wherein, in removing the portion of the first insulating layer, the laser radiation is radiated a plurality of times onto a portion of the fourth insulating layer overlapping the bending region; and

wherein the laser radiation forms a sidewall in the fourth insulating layer, the sidewall comprising a tapered surface with at least three curved surfaces continuously arranged with one another.