Hydrofluorocarbons containing —NH
A method for using a hydrofluorocarbon etching compound selected from the group consisting of 2,2,2-Trifluoroethanamine (C 2 H 4 F 3 N), 1,1,2-Trifluoroethan-1-amine (Iso-C 2 H 4 F 3 N), 2,2,3,3,3-Pentafluoropropylamine (C 3 H 4 F 5 N), 1,1,1,3,3-Pentafluoro-2-Propanamine (Iso-C 3 H 4 F 5 N), 1,1,1,3,3-Pentafluoro-(2R)-2-Propanamine (Iso-2R—C 3 H 4 F 5 N) and 1,1,1,3,3-Pentafluoro-(2S)-2-Propanamine (Iso-2S—C 3 H 4 F 5 N), 1,1,1,3,3,3-Hexafluoroisopropylamine (C 3 H 3 F 6 N) and 1,1,2,3,3,3-Hexafluoro-1-Propanamine (Iso-C 3 H 3 F 6 N) to selectively plasma etching silicon containing films, such as a dielectric antireflective coat (DARC) layer (e.g., SiON), alternating SiO/SiN layers, alternating SiO/p-Si layers, versus a photoresist layer and/or a hard mask layer (e.g., amorphous carbon layer), wherein the photoresist layer is reinforced and SiO/SiN and/or SiO/p-Si are etched non-selectively.
1. A method for etching a structure of silicon-containing layers disposed over a substrate, the structure having a dielectric anti-reflective coating (DARC) layer deposited over alternating layers of a first silicon-containing layer and a second silicon-containing layer, a patterned photoresist layer formed over the DARC layer, and a hardmask layer formed in between the DARC layer and the alternating layers, the method comprising the steps of:
selectively plasma etching the DARC layer versus the patterned photoresist layer using a hydrofluorocarbon etching compound selected from the group consisting of 2,2,2-Trifluoroethanamine (C 2 H 4 F 3 N), 1,1,2-Trifluoroethan-1-amine (Iso-C 2 H 4 F 3 N), 2,2,3,3,3-Pentafluoropropylamine (C 3 H 4 F 5 N), 1,1,1,3,3-pentafluoro-2-Propanamine (Iso-C 3 H 4 F 5 N), 1,1,1,3,3-Pentafluoro-(2R)-2-Propanamine (Iso-2R—C 3 H 4 F 5 N) and 1,1,1,3,3-Pentafluoro-(2S)-2-Propanamine (Iso-2S—C 3 H 4 F 5 N) to produce apertures in the DARC layer with less to no patterned photoresist layer deformation;
selectively plasma etching the hardmask layer exposed by the apertures in the DARC layer versus the patterned photoresist layer and the DARC layer with an etching gas suitable for etching the hardmask layer to extend the apertures through the hardmask layer; and
selectively plasma etching the alternating layers exposed by the apertures in the hardmask layer versus the patterned photoresist layer, the DARC layer and the hardmask layer using the hydrofluorocarbon etching compound to extend the apertures through the alternating layers with less to no damage of the surfaces of the alternating layers, wherein the first silicon-containing layer and the second silicon-containing layer are etched non-selectively.
2. The method of claim 1 , wherein the hydrofluorocarbon etching compound is 2,2,2-Trifluoroethanamine (C 2 H 4 F 3 N).
3. The method of claim 1 , wherein the hydrofluorocarbon etching compound is 2,2,3,3,3-Pentafluoropropylamine (C 3 H 4 F 5 N).
4. The method of claim 1 , wherein the DARC layer is a silicon-containing film having a formula of SiO x N y H z C k , wherein x ranges from 0 to 2, y ranges from 0 to 1, z ranges from 0 to about 1 and k ranges from 0 to 1.
5. The method of claim 4 , wherein the DARC layer is formed of silicon oxynitride.
6. The method of claim 1 , wherein the first silicon-containing layer is a silicon oxide layer and the second silicon-containing layer is a silicon nitride layer, or vice versa.
7. The method of claim 1 , wherein the first silicon-containing layer is a silicon oxide layer and the second silicon-containing layer is a polysilicon layer, or vice versa.
8. The method of claim 1 , wherein the hardmask layer is a thermal CVD, PECVD or spray on/spin on deposited layer of amorphous carbon or doped amorphous carbon.
9. The method of claim 8 , wherein the etching gas for etching the hardmask layer is selected from the group consisting of cC 4 F 8 , C 4 F 8 , C 4 F 6 , C 5 F 8 , CF 4 , CH 3 F, CF 3 H, CH 2 F 2 , COS, CS 2 , CF 3 I, C 2 F 3 I, C 2 F 5 I, CFN, FNO, SO 2 and combination thereof.
10. The method of claim 1 , further comprising the step of depositing a polymer layer on the patterned photoresist layer, on the hardmask layer and a sidewall of the apertures when the hydrofluorocarbon etching compound is plasma activated.
11. The method of claim 1 , further comprising the step of depositing a polymer layer on the patterned photoresist layer, on the hardmask layer and a sidewall of the apertures by producing —NH x containing ions, where x=0-2, by plasma activation of the hydrofluorocarbon etching compound.
12. The method of claim 1 , further comprising introducing an oxygen-containing gas with the hydrofluorocarbon etching compound.
13. The method of claim 12 , wherein the oxygen-containing gas is selected from the group consisting of O 2 , O 3 , CO, CO 2 , NO, NO 2 , N 2 O, SO 2 , COS, H 2 O and combination thereof.
14. The method of claim 1 , wherein the apertures extended through the alternating layers have an aspect ratio between approximately 1:1 and approximately 200:1.
15. A method for etching a structure of silicon-containing layers disposed over a substrate, the structure having a DARC layer deposited over alternating layers of silicon oxide and silicon nitride, a patterned photoresist layer formed over the DARC layer, and a hardmask layer formed in between the DARC layer and the alternating layers, the method comprising the steps of:
selectively plasma etching the DARC layer versus the patterned photoresist layer using a hydrofluorocarbon etching compound selected from the group consisting of 1,1,1,3,3,3-Hexafluoroisopropylamine (C 3 H 3 F 6 N) and 1,1,2,3,3,3-Hexafluoro-1-Propanamine (Iso-C 3 H 3 F 6 N) to produce apertures in the DARC layer;
selectively plasma etching the hardmask layer exposed by the apertures in the DARC layer versus the patterned photoresist layer and the DARC layer with an etching gas suitable for etching the hardmask layer to extend the apertures through the hardmask layer; and
selectively plasma etching the alternating layers of silicon oxide and silicon nitride exposed by the apertures in the hardmask layer versus the patterned photoresist layer, the DARC layer and the hardmask layer using the hydrofluorocarbon etching compound to extend the apertures in the alternating layers of silicon oxide and silicon nitride, wherein the silicon oxide layer and the silicon nitride layer are etched non-selectively.
16. The method of claim 15 , further comprising the step of depositing a polymer layer on the patterned photoresist layer and a sidewall of the apertures when the hydrofluorocarbon etching compound is plasma activated.
17. The method of claim 16 , wherein, under plasma, 1,1,1,3,3,3-Hexafluoroisopropylamine (C 3 H 3 F 6 N) includes —NH x containing ions, where x=0-2, which deposit on the patterned photoresist layer and the sidewall of the apertures while etching the DARC layer.
18. The method of claim 15 , wherein the DARC layer is a silicon-containing film having a formula of SiO x N y H z C k , wherein x ranges from 0 to 2, y ranges from 0 to 1, z ranges from 0 to about 1 and k ranges from 0 to 1.
19. The method of claim 18 , wherein the DARC layer is formed of silicon oxynitride.
20. The method of claim 15 , wherein the apertures extended in the alternating layers have an aspect ratio between approximately 1:1 and approximately 200:1.