Semiconductor packages relating to thermal redistribution patterns

1. A semiconductor package comprising:

a first semiconductor chip and a second semiconductor chip disposed on a package substrate and the first and second semiconductor chips spaced apart from each other; and

a thermal redistribution pattern including a first end portion disposed in a high temperature region adjacent to the first semiconductor chip, a second end portion disposed in a low temperature region adjacent to the second semiconductor chip, and an extension portion connecting the first end portion to the second end portion,

wherein the first and second end portions of the thermal redistribution pattern are bonded to the package substrate; and

wherein the extension portion of the thermal redistribution pattern is spaced apart from the package substrate.

2. The semiconductor package of claim 1 , wherein the first end portion of the thermal redistribution pattern is spaced apart from the first semiconductor chip.

3. The semiconductor package of claim 2 , wherein a side surface of the first end portion of the thermal redistribution pattern faces a side surface of the first semiconductor chip.

4. The semiconductor package of claim 1 , wherein a side surface of the first end portion of the thermal redistribution pattern is in contact with a side surface of the first semiconductor chip.

5. The semiconductor package of claim 1 ,

wherein the package substrate includes mounting patterns to which the first and second end portions of the thermal redistribution pattern are respectively bonded; and

wherein each of the mounting patterns includes a metal material.

6. The semiconductor package of claim 5 , further comprising a thermal adhesive layer that bonds the first and second end portions of the thermal redistribution pattern to the mounting patterns,

wherein the thermal adhesive layer includes a heat conduction material.

7. The semiconductor package of claim 6 , wherein the thermal adhesive layer includes a solder material layer or an adhesive material in which heat conductive beads are dispersed.

8. The semiconductor package of claim 1 , further comprising a molding layer which is formed on the package substrate to cover the thermal redistribution pattern,

wherein the molding layer fills a gap between the extension portion of the thermal redistribution pattern and the package substrate to surround the extension portion.

9. The semiconductor package of claim 8 , wherein the thermal redistribution pattern has a thermal conductivity which is higher than a thermal conductivity of the molding layer.

10. The semiconductor package of claim 9 , wherein the thermal redistribution pattern includes a metal material containing copper.

11. The semiconductor package of claim 10 , wherein the molding layer electrically insulates the extension portion of the thermal redistribution patterns from the package substrate.

12. The semiconductor package of claim 1 , wherein the high temperature region includes the first semiconductor chip and the low temperature region does not include a semiconductor chip.

13. The semiconductor package of claim 1 , wherein the first end portion of the thermal redistribution pattern has a width which is greater than a width of the extension portion of the thermal redistribution pattern.

14. The semiconductor package of claim 13 ,

wherein the thermal redistribution pattern further includes a joint portion disposed between the first end portion and the extension portion; and

wherein a width of the joint portion of the thermal redistribution pattern is reduced in a direction from the first end portion to the extension portion.

15. The semiconductor package of claim 1 , wherein the first end portion of the thermal redistribution pattern has a closed loop shape surrounding the first semiconductor chip.

16. The semiconductor package of claim 1 , wherein electric power consumed by the first semiconductor chip is greater than electric power consumed by the second semiconductor chip.

17. The semiconductor package of claim 1 , wherein a distance between the low temperature region and the first semiconductor chip is greater than a distance between the second semiconductor chip and the first semiconductor chip.

18. A semiconductor package comprising:

a first semiconductor chip and a second semiconductor chip disposed on a package substrate and the first and second semiconductor chips spaced apart from each other; and

a thermal redistribution pattern including a first end portion disposed in a high temperature region adjacent to the first semiconductor chip, a second end portion disposed in a low temperature region adjacent to the second semiconductor chip, and a plurality of sub-extension portions which are arrayed along a path between the first end portion and the second end portion, the plurality of sub-extension portions spaced part from each other,

wherein the first and second end portions of the thermal redistribution pattern are bonded to the package substrate; and

wherein the plurality of sub-extension portions of the thermal redistribution pattern are spaced apart from the package substrate.

19. A semiconductor package comprising:

a first semiconductor chip and a second semiconductor chip disposed on a package substrate and the first and second semiconductor chips spaced apart from each other; and

a thermal redistribution pattern including a first end portion disposed adjacent to the first semiconductor chip, a second end portion disposed adjacent to the second semiconductor chip, and an extension portion connected to the first end portion and the second end portion, and configured to reduce a bottleneck phenomenon of heat transmission when transferring heat from the first end portion to the second end portion,

wherein the first and second end portions of the thermal redistribution pattern are bonded to the package substrate; and

wherein the extension portion of the thermal redistribution pattern is spaced apart from the package substrate.