High absorption infrared superlattices
A ternary superlattice structure includes a substrate and periodic layer structure on the substrate and having alternating infrared absorbing semiconductor materials having a first layer of InAs [1-x] Sb [x] ternary alloy material, and a second layer of In [1-y] Z [y] As ternary alloy material, wherein Z is Ga or Al, wherein x is in a range of greater than zero and less than one, wherein y is in a range of greater than zero and less than one, and wherein a thickness of each of the first and second layers are substantially similar and configured to absorb light in a predetermined spectral band and prevent trapping of carriers in any particular layer. In examples, y is in a range from about 0.05 to about 0.35, and x is in a range of about 0.2 to about 0.8.
1. A ternary superlattice structure comprising:
a substrate; and
a non-changing periodic layer structure on the substrate and comprising alternating infrared absorbing semiconductor materials comprising:
a first layer of InAs [1-x] Sb [x] ternary alloy material, and
a second layer of In [1-y] Z [y] As ternary alloy material,
wherein Z is Ga or Al, wherein x is in a range of greater than zero and less than one, wherein y is in a range of greater than zero and less than one, and wherein the range of the thickness ratio of the first and second layers is 3:1-1:3 and the first and second layers are configured to absorb light in a predetermined spectral band and prevent trapping of carriers in any particular layer.
2. The ternary superlattice structure of claim 1 , wherein y is in a range from about 0.05 to about 0.35.
3. The ternary superlattice structure of claim 1 , wherein x is in a range of about 0.2 to about 0.8.
4. The ternary superlattice structure of claim 1 , wherein the first layer of InAs [1-x] Sb [x] ternary alloy material comprises at least one monolayer to about 30 monolayers.
5. The ternary superlattice structure of claim 1 , wherein the second layer of In [1-y] Z [y] As ternary alloy materials comprises at least one monolayer to about 30 monolayers.
6. The ternary superlattice structure of claim 1 , wherein the first layer of InAs [1-x] Sb [x] ternary alloy material comprises at least one monolayer to about 20 monolayers, wherein the second layer of In [1-y] Z [y] As ternary alloy materials comprises at least one monolayer to about 20 monolayers, and wherein a total of InAs [1-x] Sb [x] ternary alloy material monolayers and In [1-y] Z [y] As ternary alloy material monolayers is less than 30.
7. The ternary superlattice structure of claim 1 , wherein the non-changing periodic layer structure comprises bound holes and unbound electrons whose ground state is at most 10 meV below a highest conduction band minimum.
8. The ternary superlattice structure of claim 1 , wherein a thickness of the non-changing periodic layer structure is configured based on a predetermined selection of an amount of infrared absorption within the periodic layer structure.