Memory device and memory system

1. A memory device comprising:

a first memory cell configured to store data;

a first word line connected to the first memory cell;

a first circuit configured to supply a voltage to the first word line;

a second circuit configured to control the first circuit; and

a sequencer configured to control the first circuit and the second circuit,

wherein the sequencer, when data is written to the first memory cell,

determines whether a condition is satisfied or not,

causes the second circuit to generate a first voltage, when the sequencer determines that the condition is not satisfied, and

causes the second circuit to generate a second voltage which is higher than the first voltage, when the sequencer determines that the condition is satisfied, and

wherein the first circuit supplies, based on the first voltage or the second voltage, a third voltage, which is lower than the second voltage, to the first word line.

2. The memory device of claim 1 , further comprising a first memory unit configured to store the number of times of program in a case of writing data in the first memory cell, and

wherein the sequencer, when data is written in the first memory cell,

determines whether the number of times of program, which is stored in the first memory unit, is equal to or less than a first number,

causes the second circuit to generate the first voltage, when the sequencer determines that the number of times of program is not equal to or less than the first number, and

causes the second circuit to generate the second voltage, when the sequencer determines that the number of times of program is equal to or less than the first number.

3. The memory device of claim 1 , further comprising a third memory unit configured to store the number of times of program in a case of writing data in the first memory cell and the number of times of erase in a case of erasing data stored in the first memory cell, and

wherein the sequencer, when data is written in the first memory cell,

determines whether the number of times of program stored in the third memory unit is equal to or less than a first number or whether the number of times of erase stored in the third memory unit is equal to or more than a second number,

causes the second circuit to generate the first voltage, when the sequencer determines that the number of times of program is not equal to or less than the first number or that the number of times of erase is not equal to or more than the second number, and

causes the second circuit to generate the second voltage, when the sequencer determines that the number of times of program is equal to or less than the first number or that the number of times of erase is equal to or more than the second number.

4. The memory device of claim 1 , further comprising a third circuit configured to conduct a voltage supplied by the first circuit to the first word line, and

wherein the second circuit further controls the third circuit.

5. The memory device of claim 4 , further comprising a first memory unit configured to store the number of times of program in a case of writing data in the first memory cell, and

wherein the sequencer, when data is written in the first memory cell,

determines whether the number of times of program stored in the first memory unit is equal to or less than a third number and whether the number of times of program is equal to or less than a fourth number,

causes the second circuit to generate the first voltage for a voltage to be supplied to the first circuit, when the sequencer determines that the number of times of program is not equal to or less than the third number,

causes the second circuit to generate the first voltage for a voltage to be supplied to the third circuit, when the sequencer determines that the number of times of program is not equal to or less than the fourth number,

causes the second circuit to generate the second voltage for a voltage to be supplied to the first circuit, when the sequencer determines that the number of times of program is equal to or less than the third number, and

causes the second circuit to generate the second voltage for a voltage to be supplied to the third circuit, when the sequencer determines that the number of times of program is equal to or less than the fourth number.

6. The memory device of claim 1 , further comprising a third memory unit configured to store the number of times of program in a case of writing data in the first memory cell and the number of times of data erase of the first memory cell, and

wherein the sequencer, when data is written in the first memory cell,

determines whether the number of times of program stored in the third memory unit is equal to or less than a third number and whether the number of times of program is equal to or less than a fourth number, and whether the number of times of data erase stored in the third memory unit is equal to or more than a fifth number and whether the number of times of data erase is equal to or more than a sixth number,

causes the second circuit to generate the first voltage for a voltage to be supplied to the first circuit, when the sequencer determines that the number of times of program is not equal to or less than the third number or that the number of times of data erase is not equal to or more than the fifth number,

causes the second circuit to generate the first voltage for a voltage to be supplied to the third circuit, when the sequencer determines that the number of times of program is not equal to or less than the fourth number or that the number of times of data erase is not equal to or more than the sixth number,

causes the second circuit to generate the second voltage for a voltage to be supplied to the first circuit, when the sequencer determines that the number of times of program is equal to or less than the third number or that the number of times of data erase is equal to or more than the fifth number, and

causes the second circuit to generate the second voltage for a voltage to be supplied to the third circuit, when the sequencer determines that the number of times of program is equal to or less than the fourth number or that the number of times of data erase is equal to or more than the sixth number.

7. A memory system comprising:

a memory device which includes:

a first memory cell;

a first word line connected to the first memory cell;

a first circuit configured to supply a voltage to the first word line;

a second circuit configured to control the first circuit; and

a sequencer configured to control the first circuit and the second circuit, and

a controller configured to control the memory device,

wherein the controller, when data is written to the first memory cell,

determines whether a condition is satisfied or not,

causes the second circuit to generate a first voltage, when the controller determines that the condition is not satisfied,

causes the second circuit to generate a second voltage which is higher than the first voltage, when the controller determines that the condition is satisfied, and

supplies, based on the first voltage or the second voltage, a third voltage, which is lower than the second voltage, to the first word line.

8. The memory system of claim 7 , wherein the controller comprises a fourth memory unit configured to store the number of times of data write and erase to the first memory cell, and

the controller, in a case of writing data in the first memory cell,

determines whether the number of times of data write and erase stored in the fourth memory unit is equal to or greater than a seventh number,

causes the second circuit to generate the first voltage, when the controller determines that the number of times of data write and erase is not equal to or more than the seventh number, and

causes the second circuit to generate the second voltage, when the controller determines that the number of times of data write and erase is equal to or more than the seventh number.

9. The memory system of claim 7 , wherein the memory device further comprises a third circuit configured to conduct a voltage supplied by the first circuit to the first word line, and

the second circuit further controls the third circuit.

10. The memory system of claim 9 , wherein the controller further comprises a fourth memory unit configured to store the number of times of data write and erase to the first memory cell, and

the controller, when data is written in the first memory cell,

determines whether the number of times of data write and erase stored in the fourth memory unit is equal to or more than a eighth number and whether the number of times of data write and erase is equal to or more than a ninth number,

causes the second circuit to generate the first voltage for a voltage to be supplied to the first circuit, when the controller determines that the number of times of data write and erase is not equal to or more than the eighth number,

causes the second circuit to generate the first voltage for a voltage to be supplied to the third circuit, when the controller determines that the number of times of data write and erase is not equal to or more than the ninth number,

causes the second circuit to generate the second voltage for a voltage to be supplied to the first circuit, when the controller determines that the number of times of data write and erase is equal to or more than the eighth number, and

causes the second circuit to generate the second voltage for a voltage to be supplied to the third circuit, when the controller determines that the number of times of data write and erase is equal to or more than the ninth number.