Amorphous boron nitride dielectric
A nanoelectronics structure is disclosed which includes a substrate layer which has least a first surface and also has a thickness of less than 100 nm. The nanoelectronics structure also includes a dielectric layer, which is deposited on the first surface of the substrate layer and has a thickness of less than 100 nm. This dielectric layer is made up of at least 90 mole percent amorphous boron nitride. Also disclosed is a method for forming a dielectric layer on a substrate using pulsed laser deposition.
1. A nanoelectronics structure comprising:
a substrate layer having at least a first surface and having a thickness of less than 100 nm; and
a dielectric layer deposited on the first surface of the substrate layer and having a thickness of less than 100 nm,
wherein the dielectric layer comprises at least 90 mole percent amorphous boron nitride and exhibits a bandgap from about 4.0 eV to about 5.0 eV.
2. The nanoelectronics structure of claim 1 , wherein the dielectric layer comprises at least 95 mole percent amorphous boron nitride.
3. The nanoelectronics structure of claim 1 , wherein the substrate layer has a thickness of less than 20 nm.
4. The nanoelectronics structure of claim 1 , wherein the substrate layer comprises a material selected from the group consisting of silicon substrates, silicon oxide substrates, single-crystalline substrates, poly-crystalline substrates, polymer substrates, metal substrates, and two dimensional substrates.
5. The nanoelectronics structure of claim 1 , wherein the substrate layer comprises a material selected from the group consisting of tungsten, copper, silicon dioxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), molybdenum disulfide (MoS 2 ), graphene, polyethylene terephthalate (PET), and polydimethylsiloxane (PDMS).
6. The nanoelectronics structure of claim 1 , wherein the dielectric layer has a thickness of less than 20 nm.
7. The nanoelectronics structure of claim 1 , wherein the dielectric layer has a thickness of less than 10 nm.
8. The nanoelectronics structure of claim 1 , wherein the dielectric layer exhibits a dielectric constant from about 5.2 to about 6.6.
9. The nanoelectronics structure of claim 1 , wherein the dielectric layer exhibits a bandgap from about 4.3 eV to about 4.7 eV.
10. A nanoelectronics structure comprising:
a substrate layer having at least a first surface and having a thickness of less than 20 nm; and
a dielectric layer deposited on the first surface of the substrate layer and having a thickness of less than 20 nm,
wherein the substrate layer comprises a two-dimensional substrate material selected from the group consisting of molybdenum disulfide (MoS 2 ) and graphene, and
wherein the dielectric layer comprises at least 90 mole percent amorphous boron nitride.